A high-efficiency uniform/selective heating microwave oven was developed. Because the power amplifier requires high-efficiency characteristics to function as a microwave source, a free-standing Gallium Nitride (GaN) substrate was applied in this study. By applying a harmonic tuning circuit, an output power of 71 W and PAE of 73% were achieved in pulsed operation, and an output power of 63 W and PAE of 69% were achieved in CW operation. Moreover, we fabricated a prototype PA module that consists of an oscillator, a driver amplifier, PA, and other RF circuits. The output power was controlled by pulse width modulation to maintain high efficiency regardless of output power. We evaluated the arrangement of antenna polarizations to isolate each antenna. By suppressing the interference of output from adjacent antennas, it is possible to irradiate the object on the top surface of the antenna, thereby demonstrating heating characteristics with small temperature unevenness. The prototype microwave oven successfully demonstrated uniform/selective heating.

This work shows a broadband, high-efficiency power amplifier (PA) monolithic microwave integrated circuit (MMIC) that uses InP-based metal-oxide-semiconductor (MOS) high-electron-mobility transistors (HEMTs) with an extended drain-side access region and broadband conjugate matching topology. Advanced device technologies, namely, double-side-doped structures, MOS gate structures, and asymmetric gate recess, were adopted, and the length of the drain-side access region was optimized to simultaneously obtain high power and efficiency. A common-source PA MMIC based on InP-based MOS-HEMTs was fabricated, and an interstage circuit was designed to maximize the S21 per unit stage in the broadband, resulting in a record-high power-added efficiency and wide bandwidth.