IEICE TRANSACTIONS on Electronics
High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
Summary :
This work shows a broadband, high-efficiency power amplifier (PA) monolithic microwave integrated circuit (MMIC) that uses InP-based metal-oxide-semiconductor (MOS) high-electron-mobility transistors (HEMTs) with an extended drain-side access region and broadband conjugate matching topology. Advanced device technologies, namely, double-side-doped structures, MOS gate structures, and asymmetric gate recess, were adopted, and the length of the drain-side access region was optimized to simultaneously obtain high power and efficiency. A common-source PA MMIC based on InP-based MOS-HEMTs was fabricated, and an interstage circuit was designed to maximize the S21 per unit stage in the broadband, resulting in a record-high power-added efficiency and wide bandwidth.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E106-C No.11 pp.661-668
- Publication Date
- 2023/11/01
- Publicized
- 2023/08/22
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.2023MMP0005
- Type of Manuscript
- Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technologies)
- Category
Authors
Yusuke KUMAZAKI
Fujitsu
Shiro OZAKI
Fujitsu
Naoya OKAMOTO
Fujitsu
Naoki HARA
Fujitsu
Yasuhiro NAKASHA
Fujitsu
Masaru SATO
Fujitsu
Toshihiro OHKI
Fujitsu
Keyword
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Yusuke KUMAZAKI, Shiro OZAKI, Naoya OKAMOTO, Naoki HARA, Yasuhiro NAKASHA, Masaru SATO, Toshihiro OHKI, "High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors" in IEICE TRANSACTIONS on Electronics,
vol. E106-C, no. 11, pp. 661-668, November 2023, doi: 10.1587/transele.2023MMP0005.
Abstract: This work shows a broadband, high-efficiency power amplifier (PA) monolithic microwave integrated circuit (MMIC) that uses InP-based metal-oxide-semiconductor (MOS) high-electron-mobility transistors (HEMTs) with an extended drain-side access region and broadband conjugate matching topology. Advanced device technologies, namely, double-side-doped structures, MOS gate structures, and asymmetric gate recess, were adopted, and the length of the drain-side access region was optimized to simultaneously obtain high power and efficiency. A common-source PA MMIC based on InP-based MOS-HEMTs was fabricated, and an interstage circuit was designed to maximize the S21 per unit stage in the broadband, resulting in a record-high power-added efficiency and wide bandwidth.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2023MMP0005/_p
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@ARTICLE{e106-c_11_661,
author={Yusuke KUMAZAKI, Shiro OZAKI, Naoya OKAMOTO, Naoki HARA, Yasuhiro NAKASHA, Masaru SATO, Toshihiro OHKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors},
year={2023},
volume={E106-C},
number={11},
pages={661-668},
abstract={This work shows a broadband, high-efficiency power amplifier (PA) monolithic microwave integrated circuit (MMIC) that uses InP-based metal-oxide-semiconductor (MOS) high-electron-mobility transistors (HEMTs) with an extended drain-side access region and broadband conjugate matching topology. Advanced device technologies, namely, double-side-doped structures, MOS gate structures, and asymmetric gate recess, were adopted, and the length of the drain-side access region was optimized to simultaneously obtain high power and efficiency. A common-source PA MMIC based on InP-based MOS-HEMTs was fabricated, and an interstage circuit was designed to maximize the S21 per unit stage in the broadband, resulting in a record-high power-added efficiency and wide bandwidth.},
keywords={},
doi={10.1587/transele.2023MMP0005},
ISSN={1745-1353},
month={November},}
Copy
TY - JOUR
TI - High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 661
EP - 668
AU - Yusuke KUMAZAKI
AU - Shiro OZAKI
AU - Naoya OKAMOTO
AU - Naoki HARA
AU - Yasuhiro NAKASHA
AU - Masaru SATO
AU - Toshihiro OHKI
PY - 2023
DO - 10.1587/transele.2023MMP0005
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E106-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2023
AB - This work shows a broadband, high-efficiency power amplifier (PA) monolithic microwave integrated circuit (MMIC) that uses InP-based metal-oxide-semiconductor (MOS) high-electron-mobility transistors (HEMTs) with an extended drain-side access region and broadband conjugate matching topology. Advanced device technologies, namely, double-side-doped structures, MOS gate structures, and asymmetric gate recess, were adopted, and the length of the drain-side access region was optimized to simultaneously obtain high power and efficiency. A common-source PA MMIC based on InP-based MOS-HEMTs was fabricated, and an interstage circuit was designed to maximize the S21 per unit stage in the broadband, resulting in a record-high power-added efficiency and wide bandwidth.
ER -
English
