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Dry Etching Technologies of Optical Device and III-V Compound Semiconductors
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Dry etching is one of the elemental technologies for the fabrication of optical devices. In order to obtain the desired shape using the dry etching process, it is necessary to understand the reactivity of the materials being used to plasma. In particular, III-V compound semiconductors have a multi-layered structure comprising a plurality of elements and thus it is important to first have a full understanding of the basic trends of plasma dry etching, the plasma type and the characteristics of etching plasma sources. In this paper, III-V compound semiconductor etching for use in light sources such as LDs and LEDs, will be described. Glass, LN and LT used in the formation of waveguides and MLA will be introduced as well. And finally, the future prospects of dry etching will be described briefly.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E100-C No.2 pp.150-155
- Publication Date
- 2017/02/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E100.C.150
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Fabrication Technologies Supporting the Photonic/Nanostructure Devices)
- Category
Authors
Ryuichiro KAMIMURA
ULVAC
Kanji FURUTA
ULVAC
Keyword
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Ryuichiro KAMIMURA, Kanji FURUTA, "Dry Etching Technologies of Optical Device and III-V Compound Semiconductors" in IEICE TRANSACTIONS on Electronics,
vol. E100-C, no. 2, pp. 150-155, February 2017, doi: 10.1587/transele.E100.C.150.
Abstract: Dry etching is one of the elemental technologies for the fabrication of optical devices. In order to obtain the desired shape using the dry etching process, it is necessary to understand the reactivity of the materials being used to plasma. In particular, III-V compound semiconductors have a multi-layered structure comprising a plurality of elements and thus it is important to first have a full understanding of the basic trends of plasma dry etching, the plasma type and the characteristics of etching plasma sources. In this paper, III-V compound semiconductor etching for use in light sources such as LDs and LEDs, will be described. Glass, LN and LT used in the formation of waveguides and MLA will be introduced as well. And finally, the future prospects of dry etching will be described briefly.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E100.C.150/_p
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@ARTICLE{e100-c_2_150,
author={Ryuichiro KAMIMURA, Kanji FURUTA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Dry Etching Technologies of Optical Device and III-V Compound Semiconductors},
year={2017},
volume={E100-C},
number={2},
pages={150-155},
abstract={Dry etching is one of the elemental technologies for the fabrication of optical devices. In order to obtain the desired shape using the dry etching process, it is necessary to understand the reactivity of the materials being used to plasma. In particular, III-V compound semiconductors have a multi-layered structure comprising a plurality of elements and thus it is important to first have a full understanding of the basic trends of plasma dry etching, the plasma type and the characteristics of etching plasma sources. In this paper, III-V compound semiconductor etching for use in light sources such as LDs and LEDs, will be described. Glass, LN and LT used in the formation of waveguides and MLA will be introduced as well. And finally, the future prospects of dry etching will be described briefly.},
keywords={},
doi={10.1587/transele.E100.C.150},
ISSN={1745-1353},
month={February},}
Copy
TY - JOUR
TI - Dry Etching Technologies of Optical Device and III-V Compound Semiconductors
T2 - IEICE TRANSACTIONS on Electronics
SP - 150
EP - 155
AU - Ryuichiro KAMIMURA
AU - Kanji FURUTA
PY - 2017
DO - 10.1587/transele.E100.C.150
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E100-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2017
AB - Dry etching is one of the elemental technologies for the fabrication of optical devices. In order to obtain the desired shape using the dry etching process, it is necessary to understand the reactivity of the materials being used to plasma. In particular, III-V compound semiconductors have a multi-layered structure comprising a plurality of elements and thus it is important to first have a full understanding of the basic trends of plasma dry etching, the plasma type and the characteristics of etching plasma sources. In this paper, III-V compound semiconductor etching for use in light sources such as LDs and LEDs, will be described. Glass, LN and LT used in the formation of waveguides and MLA will be introduced as well. And finally, the future prospects of dry etching will be described briefly.
ER -
English
