In this study, the bending losses of chalcogenide glass channel optical waveguides consisting of an As2Se3 core and an As2S3 lower cladding layer were numerically evaluated across the astronomical N-band, which is the mid-infrared spectral range between the 8 µm and 12 µm wavelengths. The results reveal the design rules for bent waveguides in mid-infrared astrophotonic devices.

Accurately describing user behaviors with appropriate sensors is always important when developing computing cost-effective systems. This paper employs datasets recorded for fine-grained reading detection using the J!NS MEME, an eye-wear device with electrooculography (EOG), accelerometer, and gyroscope sensors. We generate models for all possible combinations of the three sensors and employ self-supervised learning and supervised learning in order to gain an understanding of optimal sensor settings. The results show that only the EOG sensor performs roughly as well as the best performing combination of other sensors. This gives an insight into selecting the appropriate sensors for fine-grained reading detection, enabling cost-effective computation.

In this study, we conduct guided mode analyses for chalcogenide glass channel waveguides using As2Se3 core and As2S3 lower cladding to determine their single-mode conditions across the astronomical N-band (8-12µm). The results reveal that a single-mode operation over the band can be achieved by choosing a suitable core-thickness.

This paper proposes a transparent glass quartz antenna for 5G-millimeter-wave-connected vehicles and clarifies the characteristics of signal reception when the glass antennas are placed on the windows of a vehicle traveling in an urban environment. Synthetic fused quartz is a material particularly suited for millimeter-wave devices owing to its excellent low transmission loss. Realizing synthetic fused quartz devices requires accurate micromachining technology specialized for the material coupled with the material technology. This paper presents a transparent antenna comprising a thin mesh pattern on a quartz substrate for installation on a vehicle window. A comparison of distributed transparent antennas and an omnidirectional antenna shows that the relative received power of the distributed antenna system is higher than that of the omnidirectional antenna. In addition, results show that the power received is similar when using vertically and horizontally polarized antennas. The design is verified in a field test using transparent antennas on the windows of a real vehicle.

The two issues of art image creation and data hiding are integrated into one and solved by a single approach in this study. An automatic method for generating a new type of computer art, called stained glass image, which imitates the stained-glass window picture, is proposed. The method is based on the use of a tree structure for region growing to construct the art image. Also proposed is a data hiding method which utilizes a general feature of the tree structure, namely, number of tree nodes, to encode the data to be embedded. The method can be modified for uses in three information protection applications, namely, covert communication, watermarking, and image authentication. Besides the artistic stego-image content which may distract the hacker's attention to the hidden data, data security is also considered by randomizing both the input data and the seed locations for region growing, yielding a stego-image which is robust against the hacker's attacks. Good experimental results proving the feasibility of the proposed methods are also included.

Novel roll-to-roll (R2R) deposition and patterning of ITO on ultra-thin glass were developed with no photolithography and applied to flexible organic light emitting diodes (OLEDs). The developed deposition consists of low temperature sputtering and annealing. The developed patterning utilizes an etching paste printed by novel R2R screen printing.

Crystalline GaN films can be grown even on amorphous substrates with the use of graphene buffer layers by pulsed sputtering deposition (PSD). The graphene buffer layers allowed us to grow highly c-axis-oriented GaN films at low substrate temperatures. Full-color GaN-based LEDs can be fabricated on the GaN/graphene structures and they are operated successfully. This indicates that the present technique is promising for future large-area light-emitting displays on amorphous substrates.

Dry etching is one of the elemental technologies for the fabrication of optical devices. In order to obtain the desired shape using the dry etching process, it is necessary to understand the reactivity of the materials being used to plasma. In particular, III-V compound semiconductors have a multi-layered structure comprising a plurality of elements and thus it is important to first have a full understanding of the basic trends of plasma dry etching, the plasma type and the characteristics of etching plasma sources. In this paper, III-V compound semiconductor etching for use in light sources such as LDs and LEDs, will be described. Glass, LN and LT used in the formation of waveguides and MLA will be introduced as well. And finally, the future prospects of dry etching will be described briefly.

Enhancing the performance of low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) requires high-quality poly-Si films. One of the authors (A.H.) has already demonstrated a continuous-wave (CW) laser lateral crystallization (CLC) method to improve the crystalline quality of thin poly-Si films, using a diode-pumped solid-state CW laser. Another candidate method to increase the on-current and decrease the subthreshold swing (s.s.) is the use of a high-k gate stack. In this paper, we discuss the performance of top-gate CLC LT poly-Si TFTs with sputtering metal/hafnium oxide (HfO2) gate stacks on nonalkaline glass substrates. A mobility of 180 cm2/Vs is obtained for n-ch TFTs, which is considerably higher than those of previously reported n-ch LT poly-Si TFTs with high-k gate stacks; it is, however, lower than the one obtained with a plasma enhanced chemical vapor deposited SiO2 gate stack. For p-ch TFTs, a mobility of 92 cm2/Vs and an s.s. of 98 mV/dec were obtained. This s.s. value is smaller than the ones of the previously reported p-ch LT poly-Si TFTs with high-k gate stacks. The evaluation of a fabricated complementary metal-oxide-semiconductor inverter showed a switching threshold voltage of 0.8 V and a gain of 38 at an input voltage of 2.0 V; moreover, full swing inverter operation was successfully confirmed at the low input voltage of 1.0 V. This shows the feasibility of CLC LT poly-Si TFTs with a sputtered HfO2 gate dielectric on nonalkaline glass substrates.

Self-aligned four-terminal (4T) planar metal double-gate (DG) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a glass substrate at a low temperature (LT), which is below $550^{circ}$C, to realize high performance and low power dissipation system-on-glass (SoG). The top gate (TG) and bottom gate (BG) were formed from tungsten (W); the BG was embedded in the glass substrate and the TG was fabricated by a self-alignment process using the BG as a photomask. This structure is called embedded metal double-gate (E-MeDG) in this paper. The poly-Si channel with lateral large grains was fabricated using a continuous-wave laser lateral crystallization (CLC). The self-aligned 4T E-MeDG LT poly-Si TFT, with a gate length of 5,$mu $m and TG and BG SiO$_2$ thicknesses of 50 and 100,nm, respectively, exhibited a subthreshold swing of 120,mV/dec and a threshold voltage ($mathrm{V}_{mathrm{th}}$) of $-$0.5,V in the connecting DG mode; i.e. when TG is connected to BG. In the TG operation at various BG control voltage, a threshold voltage modulation factor $(gamma = Delta mathrm{V}_{mathrm{th}}/Delta mathrm{V}_{mathrm{BG}})$ of 0.47 at negative BG control voltage and 0.60 at positive BG control voltage are demonstrated, which values are nearly equal to theoretical prediction of 0.40 and 0.75. Trend of subthreshold swing (s.s.) of TG operation under different BG control voltage are also consistent with theoretical prediction. In addition to TG operation, successful BG operation under various TG control voltages was confirmed. Field-effect mobility derived from g$_{mathrm{m}}$ also varied depending on control gate voltage. The high controllability of device parameter of individual LT poly-Si TFTs is caused by excellent crystalline quality of CLC poly-Si film and will enable us to the fabrication of high-speed and low power-dissipation SoG.

Excimer laser annealing at 308nm in UV and semiconductor blue laser-diode annealing at 445nm were performed and compared in term of the crystallization depending on electrical properties of Si films. As a result for the thin Si films of 50nm thickness, both lasers are very effective to enlarge the grain size and to activate electrically the dopant atoms in the CVD Si film. Smooth Si surface can be obtained using blue-laser annealing of scanned CW mode. By improving the film quality of amorphous Si deposited by sputtering for subsequent crystallization, both laser annealing techniques are effective for LTPS applications not only on conventional glass but also on flexible sheet. By conducting the latter advanced annealing technique, small grain size as well as large grains can be controlled. As blue laser is effective to crystallize even rather thicker Si films of 1µm, high performance thin-film photo-sensor or photo-voltaic applications are also expected.

The reaction path from acetyl acetone (pentane-2,4-dione) to lutidine derivative is calculated at the HF/3-21G + ZPC level(ZPC=zero point energy correction), and MP2/6-31G(d,p) + ZPC level. As a model for porous glass, H2Si=O and (OH)2Si=O make chemical bonds or strong complex with FLUORAL-P that decrease the activation energy of a H2O elimination reaction.

A multigate polycrystalline-silicon (poly-Si) thin-film transistor (TFT) is a recently popular topic in the field of Si devices. In this study, self-aligned planar metal double-gate poly-Si TFTs consisting of an embedded bottom metal gate, a top metal gate fabricated by a self-alignment process, and a lateral poly-Si film with a grain size greater than 2 µm were fabricated on a glass substrate at 550. The nominal field-effect mobility of an n-channel TFT is 530 cm2/Vs, and its subthreshold slope is 140 mV/dec. The performance of the proposed TFTs is superior to that of top-gate TFTs fabricated using equivalent processes.

Our research is focused on examining a stereoscopic quality assessment model for stereoscopic images with disparate quality in left and right images for glasses-free stereo vision. In this paper, we examine the objective assessment model of 3-D images, considering the difference in image quality between each view-point generated by the disparity-compensated coding. A overall stereoscopic image quality can be estimated by using only predicted values of left and right 2-D image qualities based on the MPEG-7 descriptor information without using any disparity information. As a result, the stereoscopic still image quality is assessed with high prediction accuracy with correlation coefficient=0.98 and average error=0.17.

The adjustable range on post-fabrication resonance wavelength trimming of long-period fiber gratings was broadened toward the blue side, and the mechanisms of the resonance wavelength shifts caused by heating were investigated. It can be concluded that the glass structure relaxes more slowly than the residual stress with decreasing heating temperature and the blue shift caused by the residual stress relaxation appears more strongly at the early stage of heating. The blue shift of 41 nm was obtained by heating a long-period grating at 600 for 3500 minutes. The changes of the index difference inducing the wavelength shifts of -41 nm and 35 nm were estimated at about -1.210-4 and +1.0 10-4 by numerical analysis, respectively.

This paper reviews our recent progress on arrayed waveguide gratings (AWGs) using super-high-Δ silica-based planar lightwave circuit (PLC) technology and their application to integrated optical devices. Factors affecting the chip size of AWGs and the impact of increasing relative index difference Δ on the chip size are investigated, and the fabrication result of a compact athermal AWG using 2.5%-Δ silica-based waveguides is presented. As an application of super-high-Δ AWGs to integrated devices, a flat-passband multi/demultiplexer consisting of an AWG and cascaded MZIs is presented.

Long-period gratings (LPGs) are written in the fibers un-preheated and preheated. The influence of residual stress on trimming resonance wavelengths by heating the LPGs is investigated comparing the post-heating changes of the transmission characteristics. It becomes evident that the residual stress relaxation shifts resonance wavelengths to shorter wavelengths quickly and the glass structure modification moves them to longer wavelengths slowly. The relaxation rate of the glass structure drops rapidly with the decrease in heating temperature, and the influence of the residual stress relaxation appears more strongly at the early stage of heating at a lower temperature. The trimming wavelength range can be broadened on the short wavelength side by decreasing the heating temperature. We could adjust resonance wavelengths without significant peak loss changes by the residual stress relaxation before writing LPGs, though the trimming range becomes narrow.

In this paper, an experimental result of complex refractive index of soda-lime glass at 30-GHz obtained by transmission method is presented at first. Secondly, a simple empirical formula of complex refractive index of soda-lime glass over frequency range from 0.1-GHz to 1000-GHz is derived using the present experimental result together with data previously reported in literatures by various researchers.

It is shown that the glass structure change is a simple and widely applicable method to modify refractive index locally in various glass fibers. A small part of a glass fiber is heated immediately to above its melt temperature by arc discharge, and then the molten fiber undergoes rapid cooling, which freezes the change of the glass structure. Therefore the refractive index of the fiber is decreased partially by the glass structure change induced by rapid solidification. The index reduction in a fiber fabricated from multicomponent glasses is estimated to be more than 0.006. To clarify that rapid solidification works for various glasses including silica glasses, long-period gratings are written in a standard telecommunication fiber with various discharge currents and times. The peak loss of more than 25 dB is obtained within only 6 periods. The index change can be adjusted by the discharge conditions. The gratings are not degraded by heating the whole gratings at 700C for 2 hours, and are highly temperature-stable. It is shown that resonance wavelengths can be tuned by controlling the heating temperature and heating time.

Conventional metal-glazed thick-film resistors are applied to Hybrid Integrated Circuits, chip resistors and others. These resistors are usually fired at a high temperature of around 850C on ceramic substrates. Recently, however, attempts have been made to fire some metal-glazed thick-film resistors at lower temperatures on glass substrates for application as the control resistors for the discharge current of dc Plasma Display Panels (PDPs). We have attempted to realize such low-firing-temperature thick-film resistors using Pb2Ru2O7-x as conductive particles, two kinds of lead-borosilicate glasses as binders, and three kinds of metallic oxide as additives, which are fired at 580C on a soda lime glass substrate. The electrical properties of the specimens, 16 kinds in all, fabricated from various combinations of binder glasses, additives and electrode materials have been measured. Effective dimensions of the specimen resistor are 0.25 0.25 mm2 or less in surface area, since extremely small size is required by PDPs. The effect of the combination of additive and binder glass on the conductive particles of Pb2Ru2O7-x has been examined in detail, together with the affinity for electrical conjunction between resistor and electrode.