IEICE TRANSACTIONS on Electronics
Highly Reliable and Drivability-Enhanced MOS Transistors with Rounded Nanograting Channels
Summary :
The structure of the nanograting channel MOSFET was optimized by simply rounding the corners of the nanogratings. The current drivabilities of the optimized nanograting channel MOSFETs were enhanced by about 20% and 50% for both n-channel and p-channel MOSFETs, respectively. The mobility changes were analyzed on the basis of channel stress as well as theoretical change of mobilities by various surface orientations. The internal compressive stress of 0.23% was measured in the channel. By suppressing the electric field increase at the corner edge of the nanograting channel to less than 10%, the fabricated rounded nanograting MOSFETs achieved lifetimes of NBTI and TDDB as long as those of conventional planar devices.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E93-C No.11 pp.1638-1644
- Publication Date
- 2010/11/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E93.C.1638
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
Authors
Keyword
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Takashi ITO, Xiaoli ZHU, Shin-Ichiro KUROKI, Koji KOTANI, "Highly Reliable and Drivability-Enhanced MOS Transistors with Rounded Nanograting Channels" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 11, pp. 1638-1644, November 2010, doi: 10.1587/transele.E93.C.1638.
Abstract: The structure of the nanograting channel MOSFET was optimized by simply rounding the corners of the nanogratings. The current drivabilities of the optimized nanograting channel MOSFETs were enhanced by about 20% and 50% for both n-channel and p-channel MOSFETs, respectively. The mobility changes were analyzed on the basis of channel stress as well as theoretical change of mobilities by various surface orientations. The internal compressive stress of 0.23% was measured in the channel. By suppressing the electric field increase at the corner edge of the nanograting channel to less than 10%, the fabricated rounded nanograting MOSFETs achieved lifetimes of NBTI and TDDB as long as those of conventional planar devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1638/_p
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@ARTICLE{e93-c_11_1638,
author={Takashi ITO, Xiaoli ZHU, Shin-Ichiro KUROKI, Koji KOTANI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Highly Reliable and Drivability-Enhanced MOS Transistors with Rounded Nanograting Channels},
year={2010},
volume={E93-C},
number={11},
pages={1638-1644},
abstract={The structure of the nanograting channel MOSFET was optimized by simply rounding the corners of the nanogratings. The current drivabilities of the optimized nanograting channel MOSFETs were enhanced by about 20% and 50% for both n-channel and p-channel MOSFETs, respectively. The mobility changes were analyzed on the basis of channel stress as well as theoretical change of mobilities by various surface orientations. The internal compressive stress of 0.23% was measured in the channel. By suppressing the electric field increase at the corner edge of the nanograting channel to less than 10%, the fabricated rounded nanograting MOSFETs achieved lifetimes of NBTI and TDDB as long as those of conventional planar devices.},
keywords={},
doi={10.1587/transele.E93.C.1638},
ISSN={1745-1353},
month={November},}
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TY - JOUR
TI - Highly Reliable and Drivability-Enhanced MOS Transistors with Rounded Nanograting Channels
T2 - IEICE TRANSACTIONS on Electronics
SP - 1638
EP - 1644
AU - Takashi ITO
AU - Xiaoli ZHU
AU - Shin-Ichiro KUROKI
AU - Koji KOTANI
PY - 2010
DO - 10.1587/transele.E93.C.1638
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2010
AB - The structure of the nanograting channel MOSFET was optimized by simply rounding the corners of the nanogratings. The current drivabilities of the optimized nanograting channel MOSFETs were enhanced by about 20% and 50% for both n-channel and p-channel MOSFETs, respectively. The mobility changes were analyzed on the basis of channel stress as well as theoretical change of mobilities by various surface orientations. The internal compressive stress of 0.23% was measured in the channel. By suppressing the electric field increase at the corner edge of the nanograting channel to less than 10%, the fabricated rounded nanograting MOSFETs achieved lifetimes of NBTI and TDDB as long as those of conventional planar devices.
ER -
English
