IEICE TRANSACTIONS on Electronics
Performance of Gate-All-Around Tunneling Field-Effect Transistors Based on Si1-x Gex Layer
Summary :
Electrical performances of gate-all-around (GAA) tunneling field-effect transistors (TFETs) based on a silicon germanium (Si1-xGex) layer have been investigated in terms of subthreshold swing (SS), on/off current ratio, on-state current (Ion). Cut-off frequency (fT) and maximum oscillation frequency (fmax) were demonstrated from small-signal parameters such as effective gate resistance (Rg), gate-drain capacitance (Cgd), and transconductance (gm). According to the technology computer-aided design (TCAD) simulation results, the current drivability, fT, and fmax of GAA TFETs based on Si1-xGex layer were higher than those of GAA TFETs based on silicon. The simulated devices had 60 nm channel length and 10 nm channel radius. A GAA TFET with x = 0.4 had maximum Ion of 51.4 µA/µm, maximum fT of 72 GHz, and maximum fmax of 610 GHz. Additionally, improvements of performance at the presented device with PNPN junctions were demonstrated in terms of Ion, SS, fT, and fmax. When the device was designed with x = 0.4 and n+ layer width (Wn) = 6 nm, it shows Ion of 271 µA/µm, fT of 245 GHz, and fmax of 1.49 THz at an operating bias (VGS = VDS = 1.0 V).
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E95-C No.5 pp.814-819
- Publication Date
- 2012/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E95.C.814
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Jae Sung LEE, In Man KANG, "Performance of Gate-All-Around Tunneling Field-Effect Transistors Based on Si1-x Gex Layer" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 5, pp. 814-819, May 2012, doi: 10.1587/transele.E95.C.814.
Abstract: Electrical performances of gate-all-around (GAA) tunneling field-effect transistors (TFETs) based on a silicon germanium (Si1-xGex) layer have been investigated in terms of subthreshold swing (SS), on/off current ratio, on-state current (Ion). Cut-off frequency (fT) and maximum oscillation frequency (fmax) were demonstrated from small-signal parameters such as effective gate resistance (Rg), gate-drain capacitance (Cgd), and transconductance (gm). According to the technology computer-aided design (TCAD) simulation results, the current drivability, fT, and fmax of GAA TFETs based on Si1-xGex layer were higher than those of GAA TFETs based on silicon. The simulated devices had 60 nm channel length and 10 nm channel radius. A GAA TFET with x = 0.4 had maximum Ion of 51.4 µA/µm, maximum fT of 72 GHz, and maximum fmax of 610 GHz. Additionally, improvements of performance at the presented device with PNPN junctions were demonstrated in terms of Ion, SS, fT, and fmax. When the device was designed with x = 0.4 and n+ layer width (Wn) = 6 nm, it shows Ion of 271 µA/µm, fT of 245 GHz, and fmax of 1.49 THz at an operating bias (VGS = VDS = 1.0 V).
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.814/_p
Copy
@ARTICLE{e95-c_5_814,
author={Jae Sung LEE, In Man KANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Performance of Gate-All-Around Tunneling Field-Effect Transistors Based on Si1-x Gex Layer},
year={2012},
volume={E95-C},
number={5},
pages={814-819},
abstract={Electrical performances of gate-all-around (GAA) tunneling field-effect transistors (TFETs) based on a silicon germanium (Si1-xGex) layer have been investigated in terms of subthreshold swing (SS), on/off current ratio, on-state current (Ion). Cut-off frequency (fT) and maximum oscillation frequency (fmax) were demonstrated from small-signal parameters such as effective gate resistance (Rg), gate-drain capacitance (Cgd), and transconductance (gm). According to the technology computer-aided design (TCAD) simulation results, the current drivability, fT, and fmax of GAA TFETs based on Si1-xGex layer were higher than those of GAA TFETs based on silicon. The simulated devices had 60 nm channel length and 10 nm channel radius. A GAA TFET with x = 0.4 had maximum Ion of 51.4 µA/µm, maximum fT of 72 GHz, and maximum fmax of 610 GHz. Additionally, improvements of performance at the presented device with PNPN junctions were demonstrated in terms of Ion, SS, fT, and fmax. When the device was designed with x = 0.4 and n+ layer width (Wn) = 6 nm, it shows Ion of 271 µA/µm, fT of 245 GHz, and fmax of 1.49 THz at an operating bias (VGS = VDS = 1.0 V).},
keywords={},
doi={10.1587/transele.E95.C.814},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Performance of Gate-All-Around Tunneling Field-Effect Transistors Based on Si1-x Gex Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 814
EP - 819
AU - Jae Sung LEE
AU - In Man KANG
PY - 2012
DO - 10.1587/transele.E95.C.814
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2012
AB - Electrical performances of gate-all-around (GAA) tunneling field-effect transistors (TFETs) based on a silicon germanium (Si1-xGex) layer have been investigated in terms of subthreshold swing (SS), on/off current ratio, on-state current (Ion). Cut-off frequency (fT) and maximum oscillation frequency (fmax) were demonstrated from small-signal parameters such as effective gate resistance (Rg), gate-drain capacitance (Cgd), and transconductance (gm). According to the technology computer-aided design (TCAD) simulation results, the current drivability, fT, and fmax of GAA TFETs based on Si1-xGex layer were higher than those of GAA TFETs based on silicon. The simulated devices had 60 nm channel length and 10 nm channel radius. A GAA TFET with x = 0.4 had maximum Ion of 51.4 µA/µm, maximum fT of 72 GHz, and maximum fmax of 610 GHz. Additionally, improvements of performance at the presented device with PNPN junctions were demonstrated in terms of Ion, SS, fT, and fmax. When the device was designed with x = 0.4 and n+ layer width (Wn) = 6 nm, it shows Ion of 271 µA/µm, fT of 245 GHz, and fmax of 1.49 THz at an operating bias (VGS = VDS = 1.0 V).
ER -
English
