IEICE TRANSACTIONS on Electronics
Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires
Summary :
In this paper, we report the reduction in the base-collector capacitance (CBC) of InP/InGaAs double heterojunction bipolar transistors with buried SiO2 wires (BG-HBT). In a previous trial, we could not confirm a clear difference between the CBC of the conventional HBT and that of the BG-HBT because the subcollector layer was thicker than expected. In this study, the interface between the collector and the subcollector was shifted to the middle of the SiO2 wires by adjusting the growth temperature, and a reduction in CBC with buried SiO2 wires was confirmed. The estimated CBC of the BG-HBT was 7.6 fF, while that of the conventional HBT was 8.6 fF. This 12% reduction was in agreement with the 10% reduction calculated according to the designed size.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E95-C No.5 pp.917-920
- Publication Date
- 2012/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E95.C.917
- Type of Manuscript
- BRIEF PAPER
- Category
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Naoaki TAKEBE, Yasuyuki MIYAMOTO, "Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 5, pp. 917-920, May 2012, doi: 10.1587/transele.E95.C.917.
Abstract: In this paper, we report the reduction in the base-collector capacitance (CBC) of InP/InGaAs double heterojunction bipolar transistors with buried SiO2 wires (BG-HBT). In a previous trial, we could not confirm a clear difference between the CBC of the conventional HBT and that of the BG-HBT because the subcollector layer was thicker than expected. In this study, the interface between the collector and the subcollector was shifted to the middle of the SiO2 wires by adjusting the growth temperature, and a reduction in CBC with buried SiO2 wires was confirmed. The estimated CBC of the BG-HBT was 7.6 fF, while that of the conventional HBT was 8.6 fF. This 12% reduction was in agreement with the 10% reduction calculated according to the designed size.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.917/_p
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@ARTICLE{e95-c_5_917,
author={Naoaki TAKEBE, Yasuyuki MIYAMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires},
year={2012},
volume={E95-C},
number={5},
pages={917-920},
abstract={In this paper, we report the reduction in the base-collector capacitance (CBC) of InP/InGaAs double heterojunction bipolar transistors with buried SiO2 wires (BG-HBT). In a previous trial, we could not confirm a clear difference between the CBC of the conventional HBT and that of the BG-HBT because the subcollector layer was thicker than expected. In this study, the interface between the collector and the subcollector was shifted to the middle of the SiO2 wires by adjusting the growth temperature, and a reduction in CBC with buried SiO2 wires was confirmed. The estimated CBC of the BG-HBT was 7.6 fF, while that of the conventional HBT was 8.6 fF. This 12% reduction was in agreement with the 10% reduction calculated according to the designed size.},
keywords={},
doi={10.1587/transele.E95.C.917},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires
T2 - IEICE TRANSACTIONS on Electronics
SP - 917
EP - 920
AU - Naoaki TAKEBE
AU - Yasuyuki MIYAMOTO
PY - 2012
DO - 10.1587/transele.E95.C.917
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2012
AB - In this paper, we report the reduction in the base-collector capacitance (CBC) of InP/InGaAs double heterojunction bipolar transistors with buried SiO2 wires (BG-HBT). In a previous trial, we could not confirm a clear difference between the CBC of the conventional HBT and that of the BG-HBT because the subcollector layer was thicker than expected. In this study, the interface between the collector and the subcollector was shifted to the middle of the SiO2 wires by adjusting the growth temperature, and a reduction in CBC with buried SiO2 wires was confirmed. The estimated CBC of the BG-HBT was 7.6 fF, while that of the conventional HBT was 8.6 fF. This 12% reduction was in agreement with the 10% reduction calculated according to the designed size.
ER -
English
