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Millimeter-Wave GaN HEMT for Power Amplifier Applications
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Gallium nitride high electron mobility transistors (GaN HEMTs) were developed for millimeter-wave high power amplifier applications. The device with a gate length of 80 nm and an InAlN barrier layer exhibited high drain current of more than 1.2 A/mm and high breakdown voltage of 73 V. A cut-off frequency fT of 113 GHz and maximum oscillation frequency fmax of 230 GHz were achieved. The output power density reached 1 W/mm with a linear gain of 6.4 dB at load-pull measurements at 90 GHz. And we extracted equivalent circuit model parameters of the millimeter-wave InAlN/GaN HEMT and showed that the model was useful in simulating the millimeter-wave power performance. Also, we report a preliminary constant bias stress test result.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E97-C No.10 pp.923-929
- Publication Date
- 2014/10/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E97.C.923
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Recent Progress in Microwave and Millimeter-wave Technologies)
- Category
Authors
Kazukiyo JOSHIN
Fujitsu Laboratories Ltd.
Kozo MAKIYAMA
Fujitsu Laboratories Ltd.
Shiro OZAKI
Fujitsu Laboratories Ltd.
Toshihiro OHKI
Fujitsu Laboratories Ltd.
Naoya OKAMOTO
Fujitsu Laboratories Ltd.
Yoshitaka NIIDA
Fujitsu Laboratories Ltd.
Masaru SATO
Fujitsu Laboratories Ltd.
Satoshi MASUDA
Fujitsu Laboratories Ltd.
Keiji WATANABE
Fujitsu Laboratories Ltd.
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Kazukiyo JOSHIN, Kozo MAKIYAMA, Shiro OZAKI, Toshihiro OHKI, Naoya OKAMOTO, Yoshitaka NIIDA, Masaru SATO, Satoshi MASUDA, Keiji WATANABE, "Millimeter-Wave GaN HEMT for Power Amplifier Applications" in IEICE TRANSACTIONS on Electronics,
vol. E97-C, no. 10, pp. 923-929, October 2014, doi: 10.1587/transele.E97.C.923.
Abstract: Gallium nitride high electron mobility transistors (GaN HEMTs) were developed for millimeter-wave high power amplifier applications. The device with a gate length of 80 nm and an InAlN barrier layer exhibited high drain current of more than 1.2 A/mm and high breakdown voltage of 73 V. A cut-off frequency fT of 113 GHz and maximum oscillation frequency fmax of 230 GHz were achieved. The output power density reached 1 W/mm with a linear gain of 6.4 dB at load-pull measurements at 90 GHz. And we extracted equivalent circuit model parameters of the millimeter-wave InAlN/GaN HEMT and showed that the model was useful in simulating the millimeter-wave power performance. Also, we report a preliminary constant bias stress test result.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E97.C.923/_p
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@ARTICLE{e97-c_10_923,
author={Kazukiyo JOSHIN, Kozo MAKIYAMA, Shiro OZAKI, Toshihiro OHKI, Naoya OKAMOTO, Yoshitaka NIIDA, Masaru SATO, Satoshi MASUDA, Keiji WATANABE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Millimeter-Wave GaN HEMT for Power Amplifier Applications},
year={2014},
volume={E97-C},
number={10},
pages={923-929},
abstract={Gallium nitride high electron mobility transistors (GaN HEMTs) were developed for millimeter-wave high power amplifier applications. The device with a gate length of 80 nm and an InAlN barrier layer exhibited high drain current of more than 1.2 A/mm and high breakdown voltage of 73 V. A cut-off frequency fT of 113 GHz and maximum oscillation frequency fmax of 230 GHz were achieved. The output power density reached 1 W/mm with a linear gain of 6.4 dB at load-pull measurements at 90 GHz. And we extracted equivalent circuit model parameters of the millimeter-wave InAlN/GaN HEMT and showed that the model was useful in simulating the millimeter-wave power performance. Also, we report a preliminary constant bias stress test result.},
keywords={},
doi={10.1587/transele.E97.C.923},
ISSN={1745-1353},
month={October},}
Copy
TY - JOUR
TI - Millimeter-Wave GaN HEMT for Power Amplifier Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 923
EP - 929
AU - Kazukiyo JOSHIN
AU - Kozo MAKIYAMA
AU - Shiro OZAKI
AU - Toshihiro OHKI
AU - Naoya OKAMOTO
AU - Yoshitaka NIIDA
AU - Masaru SATO
AU - Satoshi MASUDA
AU - Keiji WATANABE
PY - 2014
DO - 10.1587/transele.E97.C.923
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E97-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2014
AB - Gallium nitride high electron mobility transistors (GaN HEMTs) were developed for millimeter-wave high power amplifier applications. The device with a gate length of 80 nm and an InAlN barrier layer exhibited high drain current of more than 1.2 A/mm and high breakdown voltage of 73 V. A cut-off frequency fT of 113 GHz and maximum oscillation frequency fmax of 230 GHz were achieved. The output power density reached 1 W/mm with a linear gain of 6.4 dB at load-pull measurements at 90 GHz. And we extracted equivalent circuit model parameters of the millimeter-wave InAlN/GaN HEMT and showed that the model was useful in simulating the millimeter-wave power performance. Also, we report a preliminary constant bias stress test result.
ER -
English
