Evaluation of Isolation Structures against High-Frequency Substrate Coupling in Analog/Mixed-Signal Integrated Circuits

Daisuke KOSAKA; Makoto NAGATA; Yoshitaka MURASAKA; Atsushi IWATA

doi:10.1093/ietfec/e90-a.2.380

Evaluation of Isolation Structures against High-Frequency Substrate Coupling in Analog/Mixed-Signal Integrated Circuits

Daisuke KOSAKA, Makoto NAGATA, Yoshitaka MURASAKA, Atsushi IWATA

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Substrate-coupling equivalent circuits can be derived for arbitrary isolation structures by F-matrix computation. The derived netlist represents a unified impedance network among multiple sites on a chip surface as well as internal nodes of isolation structures and can be applied with SPICE simulation to evaluate isolation strengths. Geometry dependency of isolation attributes to layout parameters such as area, width, and location distance. On the other hand, structural dependency arises from vertical impurity concentration specific to p⁺/n⁺ diffusion and deep n-well. Simulation-based prototyping of isolation structures can include all these dependences and strongly helps establish an isolation strategy against high-frequency substrate coupling in a given technology. The analysis of isolation strength provided by p⁺/n⁺ guard ring, deep n-well guard ring as well as deep n-well pocket well explains S21 measurements performed on high-frequency test structures targeting 5 GHz bandwidth, that was formed in a 0.25-µm CMOS high frequency.

Publication: IEICE TRANSACTIONS on Fundamentals Vol.E90-A No.2 pp.380-387

Publication Date: 2007/02/01

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Online ISSN: 1745-1337

DOI: 10.1093/ietfec/e90-a.2.380

Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)

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Daisuke KOSAKA, Makoto NAGATA, Yoshitaka MURASAKA, Atsushi IWATA, "Evaluation of Isolation Structures against High-Frequency Substrate Coupling in Analog/Mixed-Signal Integrated Circuits" in IEICE TRANSACTIONS on Fundamentals, vol. E90-A, no. 2, pp. 380-387, February 2007, doi: 10.1093/ietfec/e90-a.2.380.
Abstract: Substrate-coupling equivalent circuits can be derived for arbitrary isolation structures by F-matrix computation. The derived netlist represents a unified impedance network among multiple sites on a chip surface as well as internal nodes of isolation structures and can be applied with SPICE simulation to evaluate isolation strengths. Geometry dependency of isolation attributes to layout parameters such as area, width, and location distance. On the other hand, structural dependency arises from vertical impurity concentration specific to p⁺/n⁺ diffusion and deep n-well. Simulation-based prototyping of isolation structures can include all these dependences and strongly helps establish an isolation strategy against high-frequency substrate coupling in a given technology. The analysis of isolation strength provided by p⁺/n⁺ guard ring, deep n-well guard ring as well as deep n-well pocket well explains S21 measurements performed on high-frequency test structures targeting 5 GHz bandwidth, that was formed in a 0.25-µm CMOS high frequency.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1093/ietfec/e90-a.2.380/_p

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@ARTICLE{e90-a_2_380,
author={Daisuke KOSAKA, Makoto NAGATA, Yoshitaka MURASAKA, Atsushi IWATA, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Evaluation of Isolation Structures against High-Frequency Substrate Coupling in Analog/Mixed-Signal Integrated Circuits},
year={2007},
volume={E90-A},
number={2},
pages={380-387},
abstract={Substrate-coupling equivalent circuits can be derived for arbitrary isolation structures by F-matrix computation. The derived netlist represents a unified impedance network among multiple sites on a chip surface as well as internal nodes of isolation structures and can be applied with SPICE simulation to evaluate isolation strengths. Geometry dependency of isolation attributes to layout parameters such as area, width, and location distance. On the other hand, structural dependency arises from vertical impurity concentration specific to p⁺/n⁺ diffusion and deep n-well. Simulation-based prototyping of isolation structures can include all these dependences and strongly helps establish an isolation strategy against high-frequency substrate coupling in a given technology. The analysis of isolation strength provided by p⁺/n⁺ guard ring, deep n-well guard ring as well as deep n-well pocket well explains S21 measurements performed on high-frequency test structures targeting 5 GHz bandwidth, that was formed in a 0.25-µm CMOS high frequency.},
keywords={},
doi={10.1093/ietfec/e90-a.2.380},
ISSN={1745-1337},
month={February},}

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TY - JOUR
TI - Evaluation of Isolation Structures against High-Frequency Substrate Coupling in Analog/Mixed-Signal Integrated Circuits
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 380
EP - 387
AU - Daisuke KOSAKA
AU - Makoto NAGATA
AU - Yoshitaka MURASAKA
AU - Atsushi IWATA
PY - 2007
DO - 10.1093/ietfec/e90-a.2.380
JO - IEICE TRANSACTIONS on Fundamentals
SN - 1745-1337
VL - E90-A
IS - 2
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - February 2007
AB - Substrate-coupling equivalent circuits can be derived for arbitrary isolation structures by F-matrix computation. The derived netlist represents a unified impedance network among multiple sites on a chip surface as well as internal nodes of isolation structures and can be applied with SPICE simulation to evaluate isolation strengths. Geometry dependency of isolation attributes to layout parameters such as area, width, and location distance. On the other hand, structural dependency arises from vertical impurity concentration specific to p⁺/n⁺ diffusion and deep n-well. Simulation-based prototyping of isolation structures can include all these dependences and strongly helps establish an isolation strategy against high-frequency substrate coupling in a given technology. The analysis of isolation strength provided by p⁺/n⁺ guard ring, deep n-well guard ring as well as deep n-well pocket well explains S21 measurements performed on high-frequency test structures targeting 5 GHz bandwidth, that was formed in a 0.25-µm CMOS high frequency.
ER -