IEICE TRANSACTIONS on Fundamentals
Statistical Modeling of Device Characteristics with Systematic Variability
Summary :
The variabilities of device characteristics are usually regarded as a normal distribution. If we consider the variabilities over the whole wafer, however, they cannot be expressed as a normal distribution due to the existence of global systematic component. We propose a statistical model, characterizing the global systematic component according to the distance from the center of the wafer, which can express the variabilities over the whole wafer statistically.
- Publication
- IEICE TRANSACTIONS on Fundamentals Vol.E84-A No.2 pp.529-536
- Publication Date
- 2001/02/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Section on Analog Circuit Techniques Supporting the System LSI Era)
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Kenichi OKADA, Hidetoshi ONODERA, "Statistical Modeling of Device Characteristics with Systematic Variability" in IEICE TRANSACTIONS on Fundamentals,
vol. E84-A, no. 2, pp. 529-536, February 2001, doi: .
Abstract: The variabilities of device characteristics are usually regarded as a normal distribution. If we consider the variabilities over the whole wafer, however, they cannot be expressed as a normal distribution due to the existence of global systematic component. We propose a statistical model, characterizing the global systematic component according to the distance from the center of the wafer, which can express the variabilities over the whole wafer statistically.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e84-a_2_529/_p
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@ARTICLE{e84-a_2_529,
author={Kenichi OKADA, Hidetoshi ONODERA, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Statistical Modeling of Device Characteristics with Systematic Variability},
year={2001},
volume={E84-A},
number={2},
pages={529-536},
abstract={The variabilities of device characteristics are usually regarded as a normal distribution. If we consider the variabilities over the whole wafer, however, they cannot be expressed as a normal distribution due to the existence of global systematic component. We propose a statistical model, characterizing the global systematic component according to the distance from the center of the wafer, which can express the variabilities over the whole wafer statistically.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - Statistical Modeling of Device Characteristics with Systematic Variability
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 529
EP - 536
AU - Kenichi OKADA
AU - Hidetoshi ONODERA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E84-A
IS - 2
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - February 2001
AB - The variabilities of device characteristics are usually regarded as a normal distribution. If we consider the variabilities over the whole wafer, however, they cannot be expressed as a normal distribution due to the existence of global systematic component. We propose a statistical model, characterizing the global systematic component according to the distance from the center of the wafer, which can express the variabilities over the whole wafer statistically.
ER -
English
