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IEICE TRANSACTIONS on transactions

Mechanism of Bit Line Mode Soft Error for DRAM

Mikio ASAKURA, Yoshio MATSUDA, Katsuhiro TSUKAMOTO, Kazuyasu FUJISHIMA, Tsutomu YOSHIHARA

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Summary :

This letter reports a charge collection experiment of alpha-particle-induced carriers in the cell arrays of the 1 Mb DRAM. It is indicated that this experiment is effective to estimate the soft error rate of VLSI memories with various kinds of structures.

Publication
IEICE TRANSACTIONS on transactions Vol.E70-E No.11 pp.1060-1061
Publication Date
1987/11/25
Publicized
Online ISSN
DOI
Type of Manuscript
Special Section LETTER (Special Issue: Papers from 1987 National Conference on Semicondutor Devices and Materials IEICE)
Category
Semiconductor Devices

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