This letter reports a charge collection experiment of alpha-particle-induced carriers in the cell arrays of the 1 Mb DRAM. It is indicated that this experiment is effective to estimate the soft error rate of VLSI memories with various kinds of structures.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copy
Mikio ASAKURA, Yoshio MATSUDA, Katsuhiro TSUKAMOTO, Kazuyasu FUJISHIMA, Tsutomu YOSHIHARA, "Mechanism of Bit Line Mode Soft Error for DRAM" in IEICE TRANSACTIONS on transactions,
vol. E70-E, no. 11, pp. 1060-1061, November 1987, doi: .
Abstract: This letter reports a charge collection experiment of alpha-particle-induced carriers in the cell arrays of the 1 Mb DRAM. It is indicated that this experiment is effective to estimate the soft error rate of VLSI memories with various kinds of structures.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e70-e_11_1060/_p
Copy
@ARTICLE{e70-e_11_1060,
author={Mikio ASAKURA, Yoshio MATSUDA, Katsuhiro TSUKAMOTO, Kazuyasu FUJISHIMA, Tsutomu YOSHIHARA, },
journal={IEICE TRANSACTIONS on transactions},
title={Mechanism of Bit Line Mode Soft Error for DRAM},
year={1987},
volume={E70-E},
number={11},
pages={1060-1061},
abstract={This letter reports a charge collection experiment of alpha-particle-induced carriers in the cell arrays of the 1 Mb DRAM. It is indicated that this experiment is effective to estimate the soft error rate of VLSI memories with various kinds of structures.},
keywords={},
doi={},
ISSN={},
month={November},}
Copy
TY - JOUR
TI - Mechanism of Bit Line Mode Soft Error for DRAM
T2 - IEICE TRANSACTIONS on transactions
SP - 1060
EP - 1061
AU - Mikio ASAKURA
AU - Yoshio MATSUDA
AU - Katsuhiro TSUKAMOTO
AU - Kazuyasu FUJISHIMA
AU - Tsutomu YOSHIHARA
PY - 1987
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E70-E
IS - 11
JA - IEICE TRANSACTIONS on transactions
Y1 - November 1987
AB - This letter reports a charge collection experiment of alpha-particle-induced carriers in the cell arrays of the 1 Mb DRAM. It is indicated that this experiment is effective to estimate the soft error rate of VLSI memories with various kinds of structures.
ER -