A low-noise, low-power 10-GHz CMOS VCO was developed using cost-effective 0.18-µm CMOS technology. A complementary cross-coupled topology was employed to decrease the power dissipation and phase noise. The fabricated VCO demonstrates a low phase noise of -106 dBc/Hz at an offset frequency of 1 MHz and a low power dissipation of 4.4 mW.

RHiNET-3/SW is the third-generation switch used in the RHiNET-3 system. It provides both low-latency processing and flexible connection due to its use of a credit-based flow-control mechanism, topology-free routing, and deadlock-free routing. The aggregate throughput of RHiNET-3/SW is 80 Gbps, and the latency is 140 ns. RHiNET-3/SW also provides a hop-by-hop retransmission mechanism. Simulation demonstrated that the effective throughput at a node in a 64-node torus RHiNET-3 system is equivalent to the effective throughput of a 64-bit 33-MHz PCI bus and that the performance of RHiNET-3/SW almost equals or exceeds the best performance of RHiNET-2/SW, the second-generation switch. Although credit-based flow control requires 26% more gates than rate-based flow control to manage the virtual channels (VCs), it requires less VC memory than rate-based flow control. Moreover, its use in a network system reduces latency and increases the maximum throughput compared to rate-based flow control.

The first practical approach to 100-Gigabit Ethernet, i.e., Ethernet with a throughput of 100-Gb/s, is proposed for use in the next generation of LANs for GRID computing and large-capacity data centers. New structures, including a coding architecture, de-skewing method and high-speed packaging techniques, are introduced to the PHY layer to obtain the required data rate. Our form of 100-Gigabit Ethernet uses 10-Gb/s 10-channel CWDM or parallel-optical links. The coding architecture is formed of 64B/66B codes, modified for the CWDM and parallel links. In the de-skewing of the parallel signals, specially designed IDLE characters are used to compensate for skewing of data in the respective signal lanes. Advanced packaging techniques, which suppress the propagation loss and reflection of the 10-Gb/s lanes to obtain high-speed, good integrity and low-noise signaling, are proposed and evaluated. The proposed architectural features make this 100-Gigabit Ethernet concept practical for next-generation LANs.

RHiNET-2/SW is a network switch for the RHiNET-2 parallel computing system. RHiNET-2/SW enables high-speed and long-distance data transmission between PC nodes for parallel computing. In RHiNET-2/SW, a one-chip CMOS switch-LSI and eight pairs of 800-Mbit/s 12-channel parallel optical interconnection modules are mounted into a single compact board. This switch allows high-speed 8-Gbit/s/port parallel optical data transmission over a distance of up to 100 m, and the aggregate throughput is 64 Gbit/s/board. The CMOS-ASIC switching LSI enables high-throughput (64 Gbit/s) packet switching with a single chip. The parallel optical interconnection modules enable high-speed and low-latency data transmission over a long distance. The structure and layout of the printed circuit board is optimized for high-speed, high-density device implementation to overcome electrical problems such as signal propagation-loss and crosstalk. All of the electrical interfaces are composed of high-speed CMOS-LVDS logic (800 Mbit/s/pin). We evaluated the reliability of the optical I/O port through long-term data transmission. No errors were detected during 50 hours of continuous data transmission at a data rate of 800 Mbit/s 10 bits (BER: < 2.44 10-14). This test result shows that RHiNET-2/SW can provide high-throughput, long-transmission-length, and highly reliable data transmission in a practical parallel computing system.