In this paper, a 65 nm 1.2 V 7-bit 1GSPS folding-interpolation A/D converter with a digitally self-calibrated vector generator is proposed. The folding rate is 2 and the interpolation rate is 8. A self-calibrated vector generation circuit with a feedback loop and a recursive digital code inspection is described. The circuit reduces the variation of the offset voltage caused by process mismatches, parasitic resistors, and parasitic capacitances. The chip has been fabricated with a 65 nm 1-poly 6-metal CMOS technology. The effective chip area is 0.87 mm2 and the power consumption is about 110 mW with a 1.2 V power supply. The measured SNDR is about 39.1 dB when the input frequency is 250 MHz at a 1 GHz sampling frequency. The measured SNDR is drastically improved in comparison with the same ADC without any calibration.

In this paper, a novel pass-transistor logic with an efficient level restoration circuit, named Power Saved Pass-transistor Logic (PSPL), is proposed. It is shown how, through the use of regenerative feedback with pMOS switches, we reduce the power consumption and propagation delay compared to conventional pass-transistor logic. To demonstrate the performance of PSPL, a 5454-bit multiplier is designed. For speed and power optimization, the multiplier uses high compression-rate compressors without Booth Encoding, and a 108-bit conditional sum adder with separated carry generation block. The measured multiplication time was 13. 5 ns in a 0. 6 µm single-poly triple-metal 3. 3 V CMOS process. Furthermore, a sequential circuit of a low power 7-bit serial counter is designed and fabricated in a 0. 6 µm single-poly triple-metal 3. 3 V CMOS process. The measured operating speed was 250 MHz.

A fully integrated current-steering 10-b CMOS Digital-to-Analog Converter with on-chip terminated resistors is presented. In order to improve the device-mismatching problem of internal termination resistors, a self-calibrated current bias circuit is designed. With the self-calibrated current bias circuit, the gain error of the output voltage swing is reduced within 0.5%. For the purpose of reducing glitch noises, furthermore, a novel current switch based on a deglitching circuit is proposed. The prototype circuit has been fabricated with a 3 V 0.35 µm 2-poly 3-metal CMOS technology, and it occupies 1350 µm750 µm silicon area with 45 mW power consumption. The measured INL and DNL are within 0.5LSB, respectively. The measured SFDR is about 65 dB, when an input signal is about 8 MHz at 100 MHz clock frequency.

In this paper, a high performance 3232-bit multiplier for a DSP core is proposed. The multiplier is composed of a block of Booth Encoder, a block of data compression, and a block of a 64-bit adder. In the block of Booth encoder, a conditional sign decision Booth encoder that reduces the gate delay and power consumption is proposed. In the block of data compression, 4-2 and 9-2 data compressors based on a novel compound logic are used for the efficient compressing of extra sign bit. In the block of 64-bit adder, an adaptive MUX-based conditional select adder with a separated carry generation block is proposed. The proposed 3232-bit multiplier is designed by a full-custom method and there are about 28,000 transistors in an active area of 900 µm 500 µm with 0.25 µm CMOS technology. From the experimental results, the multiplication time of the multiplier is about 3.2 ns at 2.5 V power supply, and it consumes about 50 mW at 100 MHz.

Currently, a typical 5454 bit multiplier is composed of a parallel structured architecture with the encoder block to implement the Modified Booth's algorithm, a block to implement the data compression, and a 108-bit Carry Look-Ahead (CLA) adder. The key idea in the present paper is a power optimization for the data compressors based on a Window Detector. The role of the Window Detector is detecting the input data, activating a selected operation unit, choosing the optimized output data, and driving the next stage. It can reduce the power consumption drastically because only one selected operation unit (a Window) is activated. The power consumption of the proposed data compressors is reduced by about 33%, compared with that of the conventional multiplier; while the propagation delay is nearly same as that of the conventional one. Furthermore, the power consumption dependent on the input data transition is shown for both the static CMOS logic and the nMOS pass transistor logic.

In this paper, a 3 V 8-bit 200MSPS CMOS folding/interpolation Analog-to-Digital Converter is proposed. It employs an efficient architecture whose FR (Folding Rate) is 8, NFB (Number of Folding Block) is 4, and IR (Interpolating Rate) is 8. For the purpose of improving SNR, distributed track and hold circuits are included at the front end of input stage. In order to obtain a high speed and low power operation, an improved dynamic analog latch is proposed. Further, a digital encoder based on a novel thermometer algorithm and a delay error correction algorithm is proposed. The chip has been fabricated with a 0.35 µm 2-poly 3-metal n-well CMOS technology. The effective chip area is 1200 µm 800 µm and it dissipates about 210 mW at 3 V power supply. The INL is within 1 LSB and DNL is within 1 LSB, respectively. The SNR is about 43 dB, when the input frequency is 10 MHz at 200 MHz clock frequency.

In this paper, a CMOS analog-to-digital converter (ADC) with a 6-bit 100 MSPS at 1.8 V is described. The architecture of the proposed ADC is based on a folding type with a resistive interpolation technique for low power consumption. To reduce the power consumption, a folder reduction technique to decrease the number of folding blocks (NFB) by half of the conventional ones, an averaging folder technique, and a compensated resistive interpolation technique are proposed. Further, an auto-switching encoder for efficient digital processing is also presented. With the clock speed of 100 MSPS, the ADC achieves an effective resolution bandwidth (ERBW) of 50 MHz, while consuming only 4.5 mW of power. The measured result of figure-of-merit (FoM) is 0.93 [pJ/convstep]. The active chip occupies an area of 0.28 mm2 in 0.18 µm CMOS technology.