A design scheme for a high-speed differential-input limiting transimpedance amplifier (TIA) was developed. The output-stage amplifier of the TIA is investigated in detail in order to suppress undershoot and ringing in the output waveform. The amplifier also includes a peak detector for the received signal strength indicator (RSSI) output, which is used to control the optical demodulator for differential-phase-shift-keying or differential-quadrature-phase-shift-keying formats. The limiting TIA was fabricated on the basis of 1-µm emitter-width InP-based heterojunction-bipolar-transistor (HBT) IC technology. Its differential gain is 39 dB, its 3-dB bandwidth is 27 GHz, and its estimated differential transimpedance gain is 73 dBΩ. The obtained output waveform shows that the developed design scheme is effective for suppressing undershoot and ringing.

This paper describes the circuit design and measured performance of a high-speed digital-to-analog converter (DAC) for the next generation of coherent optical communications systems. To achieve high-speed and low-power operation, we used an R-2R current-steering architecture and devised timing alignment and waveform improvement techniques. A 6-bit DAC test chip was fabricated with InP HBT technology, which yields a peak ft of 175 GHz and a peak fmax of 260 GHz. The measured differential and integral non-linearity (DNL and INL) are within +0.61/-0.07 LSB and +0.27/-0.52 LSB, respectively. The measured spurious-free dynamic range (SFDR) is 44.7 dB for a sinusoidal output of 72.5 MHz at a sampling rate of 13.5 GS/s, which was the limit of our measurement setup. The expected ramp-wave outputs at a sampling rate of 24 GS/s are also obtained. The total power consumption is as low as 0.88 W with a supply voltage of -4.0 V. This DAC can provide low-power operation and a higher sampling rate than any other previously reported DAC with a resolution of 5 bits or more.

This paper is a report on a high ESD breakdown-voltage InP HBT transimpedance amplifier IC for optical video distribution systems. To make ESD breakdown-voltage higher, we designed ESD protection circuits integrated in the TIA IC using base-collector/base-emitter diodes of InP HBTs and resistors. These components for ESD protection circuits have already existed in the employed InP HBT IC process, so no process modifications were needed. Furthermore, to meet requirements for use in optical video distribution systems, we studied circuit design techniques to obtain a good input-output linearity and a low-noise characteristic. Fabricated InP HBT TIA IC exhibited high human-body-model ESD breakdown voltages (±1000 V for power supply terminals, ±200 V for high-speed input/output terminals), good input-output linearity (less than 2.9-% duty-cycle-distortion), and low noise characteristic (10.7 pA/ averaged input-referred noise current density) with a -3-dB-down higher frequency of 6.9 GHz. To the best of our knowledge, this paper is the first literature describing InP ICs with high ESD-breakdown voltages.