In order to improve the critical current density (Jc) of c-axis-oriented EuBa2Cu3O7 (c-EBCO) thin films deposited on R-plane sapphires (R-Al2O3) with a CeO2 buffer layer, insertion of an Sm2O3 buffer layer and optimization of its deposition condition were attempted. The effects of substrate temperature and film thickness of an Sm2O3 buffer layer on the orientation, crystallinity, surface morphology and superconducting properties of EBCO thin films were examined. As a result, EBCO thin films with Jc = 5.7 MA/cm2 at 77.3 K were obtained on a sapphire with a CeO2(80 )Sm2O3(200 ) buffer layer. Epitaxial relations of sputter-deposited films were clarified.

This paper describes the properties of non-dispersive and dispersive delay lines fabricated using EuBaCuO superconducting films. The 24 cm long stripline non-dispersive delay line showed a very low loss of 0.3 dB/nsec at 77 K and 10 GHz, and no dispersion at a delay time of 2.3 nsec at frequencies below 20 GHz. The 14 cm long microstrip dispersive delay line with modal dispersion exhibited a relative delay time of approximately 120 psec in the 118 GHz frequency range. The 26 cm long stripline dispersive delay line with structural dispersion due to coupling provided a relative delay time of 230 psec in the above frequency range and roughly the same loss as a non-dispersive delay line.

By depositing insulating layers on oxide superconducting films, the films generally deteriorate. When an insulating multilayer of CeO2(50 )SrTiO3(200 ) was grown on 800--thick EuBa2Cu3O 7-δ (EBCO) films with Tce's (Tc endpoint) above 90 K, the films exhibited Tce's of about 40 K. Recovery of the deteriorated films was carried out by two treatment methods. A pure oxygen treatment, where the deteriorated films were annealed at a temperature (Tsa) of 550C and an oxygen pressure (PO2) of 100 kPa for 60 min, and then naturally cooled, restored the films with Tce's of about 60 K. An activated oxygen plasma (AOP) treatment, where the deteriorated films were exposed to oxygen plasma at a Tsa=550C for 40 min and subsequently oxygen gas was introduced into the chamber up to 2 kPa and then naturally cooled, restored the films with Tce's of about 84 K. The AOP-treated film was recovered with a cooling rate of less than 6.8C/min, and exhibited Tce of 90 K. The AOP-treated film took in oxygen more effectively than the pure oxygen-treated film with the cooling process at less than PO2=100 kPa.

This paper describes the structure and properties of superconductive small antennas with thin-film matching circuits. These circuits make it possible to realize small antennas, 38 mm20 mm16 mm in size. This is one quarter the length of our previously reported ceramic antennas. The actual gain of this antennas was -4.5 dBi at 470 MHz. This value is 5.5 dB higher than that of Cu antennas with exactly the same structure.

Ga-doped ZnO thin films were prepared by RF magnetron sputtering. The effects of adding H2 to pure Ar sputtering gas were investigated. In the case of pure Ar at 2 Pa, the resistivity is 7.4510-3 Ωcm, whereas for Ar+1%H2 at 0.3 Pa, it markedly decreases to 2.5210-4 Ωcm. In this case, the carrier density and Hall mobility are 1.121021 cm-3 and 23.4 cm2/Vs, respectively. This conductive film also exhibits a transmittance of 90% within the visible-wavelength range. The addition of H2 and the decrease in the pressure results in the fabrication of a significantly more transparent and conductive film.

This paper reports on the properties of thin-film thermal switches that are monolithically fabricated on high-Tc superconductive filter. Operating at a wide temperature range of 50-77 K, it was found that the switch could control the center frequency by -10 MHz with an increased insertion loss of less than 0.7 dB. In an on-off switching operation of filter characteristics using thin-film switches, power consumption was approximately 20 mW at 77 K, and the signal decay time as a switching speed was 30 ms at 76 K with a switch current of 70 mA. The decay time decreased exponentially as the switch current or the temperature setting increased.

This paper describes a new method for joining BiSrCaCuO superconductors (BSCCO) which realizes low microwave loss and high mechanical strength. This method consists of two processes. In the first the BSCCO surface is metallized with Ag and in the second a joint is formed by using thermally curable Ag paste. With this method, we obtained a joint with a loss of 0.3 dB around 1.1 GHz with the co-axial cavity techniques. Furthermore, the mechanical strength of the joint was greater than that of the BSCCO sample. From the results of DC resistance measurements and SEM observations, we attribute this good performance to the adhesion and continuity of the metallized Ag with the BSCCO surface.

High temperature superconductors are eminently suitable for use in high frequency devices because of their large energy gap. We fabricated weak link Josephson junctions connected in series. The junctions were constructed of EuBa2Cu3O7-x (EBCO) superconducting thin films on bicrystal MgO substrates. We measured their microwave broadband detection (video detection) characteristics. The responsivity (Sr) of the junctions depended on the bias current and their normal state resistance. The array junctions were effective in increasing normal state resistance. We obtained a maximum Sr of 22.6 [V/W].