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[Author] Tapas Kumar MAITI(2hit)

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  • Actuator-Control Circuit Based on OTFTs and Flow-Rate Estimation for an All-Organic Fluid Pump

    Lei CHEN  Tapas Kumar MAITI  Hidenori MIYAMOTO  Mitiko MIURA-MATTAUSCH  Hans Jürgen MATTAUSCH  

     
    PAPER-Systems and Control

      Vol:
    E99-A No:4
      Page(s):
    798-805

    In this paper, we report the design of an organic thin-film transistor (OTFT) driver circuit for the actuator of an organic fluid pump, which can be integrated in a portable-size fully-organic artificial lung. Compared to traditional pump designs, lightness, compactness and scalability are achieved by adopting a creative pumping mechanism with a completely organic-material-based system concept. The transportable fluid volume is verified to be flexibly adjustable, enabling on-demand controllability and scalability of the pump's fluid-flow rate. The simulations, based on an accurate surface-potential OTFT compact model, demonstrate that the necessary driving waveforms can be efficiently generated and adjusted to the actuator requirements. At the actuator-driving-circuit frequency of 0.98Hz, an all-organic fluid pump with 40cm length and 0.2cm height is able to achieve a flow rate of 0.847L/min, which satisfies the requirements for artificial-lung assist systems to a weakened normal lung.

  • Prevention of Highly Power-Efficient Circuits due to Short-Channel Effects in MOSFETs

    Arnab MUKHOPADHYAY  Tapas Kumar MAITI  Sandip BHATTACHARYA  Takahiro IIZUKA  Hideyuki KIKUCHIHARA  Mitiko MIURA-MATTAUSCH  Hafizur RAHAMAN  Sadayuki YOSHITOMI  Dondee NAVARRO  Hans Jürgen MATTAUSCH  

     
    PAPER-Semiconductor Materials and Devices

      Vol:
    E102-C No:6
      Page(s):
    487-494

    This report focuses on an optimization scheme of advanced MOSFETs for designing CMOS circuits with high power efficiency. For this purpose the physics-based compact model HiSIM2 is applied so that the relationship between device and circuit characteristics can be investigated properly. It is demonstrated that the short-channel effect, which is usually measured by the threshold-voltage shift relative to long-channel MOSFETs, provides a consistent measure for device-performance degradation with reduced channel length. However, performance degradations of CMOS circuits such as the power loss cannot be predicted by the threshold-voltage shift alone. Here, the subthreshold swing is identified as an additional important measure for power-efficient CMOS circuit design. The increase of the subthreshold swing is verified to become obvious when the threshold-voltage shift is larger than 0.15V.