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Lei CHEN Tapas Kumar MAITI Hidenori MIYAMOTO Mitiko MIURA-MATTAUSCH Hans Jürgen MATTAUSCH
In this paper, we report the design of an organic thin-film transistor (OTFT) driver circuit for the actuator of an organic fluid pump, which can be integrated in a portable-size fully-organic artificial lung. Compared to traditional pump designs, lightness, compactness and scalability are achieved by adopting a creative pumping mechanism with a completely organic-material-based system concept. The transportable fluid volume is verified to be flexibly adjustable, enabling on-demand controllability and scalability of the pump's fluid-flow rate. The simulations, based on an accurate surface-potential OTFT compact model, demonstrate that the necessary driving waveforms can be efficiently generated and adjusted to the actuator requirements. At the actuator-driving-circuit frequency of 0.98Hz, an all-organic fluid pump with 40cm length and 0.2cm height is able to achieve a flow rate of 0.847L/min, which satisfies the requirements for artificial-lung assist systems to a weakened normal lung.
Arnab MUKHOPADHYAY Tapas Kumar MAITI Sandip BHATTACHARYA Takahiro IIZUKA Hideyuki KIKUCHIHARA Mitiko MIURA-MATTAUSCH Hafizur RAHAMAN Sadayuki YOSHITOMI Dondee NAVARRO Hans Jürgen MATTAUSCH
This report focuses on an optimization scheme of advanced MOSFETs for designing CMOS circuits with high power efficiency. For this purpose the physics-based compact model HiSIM2 is applied so that the relationship between device and circuit characteristics can be investigated properly. It is demonstrated that the short-channel effect, which is usually measured by the threshold-voltage shift relative to long-channel MOSFETs, provides a consistent measure for device-performance degradation with reduced channel length. However, performance degradations of CMOS circuits such as the power loss cannot be predicted by the threshold-voltage shift alone. Here, the subthreshold swing is identified as an additional important measure for power-efficient CMOS circuit design. The increase of the subthreshold swing is verified to become obvious when the threshold-voltage shift is larger than 0.15V.