IEICE TRANSACTIONS on Electronics
Prevention of Highly Power-Efficient Circuits due to Short-Channel Effects in MOSFETs
Summary :
This report focuses on an optimization scheme of advanced MOSFETs for designing CMOS circuits with high power efficiency. For this purpose the physics-based compact model HiSIM2 is applied so that the relationship between device and circuit characteristics can be investigated properly. It is demonstrated that the short-channel effect, which is usually measured by the threshold-voltage shift relative to long-channel MOSFETs, provides a consistent measure for device-performance degradation with reduced channel length. However, performance degradations of CMOS circuits such as the power loss cannot be predicted by the threshold-voltage shift alone. Here, the subthreshold swing is identified as an additional important measure for power-efficient CMOS circuit design. The increase of the subthreshold swing is verified to become obvious when the threshold-voltage shift is larger than 0.15V.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E102-C No.6 pp.487-494
- Publication Date
- 2019/06/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.2018ECP5046
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
Authors
Arnab MUKHOPADHYAY
Hiroshima University,Indian Institute of Engineering Science and Technology
Tapas Kumar MAITI
Hiroshima University
Sandip BHATTACHARYA
Hiroshima University
Takahiro IIZUKA
Hiroshima University
Hideyuki KIKUCHIHARA
Hiroshima University
Mitiko MIURA-MATTAUSCH
Hiroshima University
Hafizur RAHAMAN
Indian Institute of Engineering Science and Technology
Sadayuki YOSHITOMI
Toshiba Memory Corporation
Dondee NAVARRO
Hiroshima University
Hans Jürgen MATTAUSCH
Hiroshima University
Keyword
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Arnab MUKHOPADHYAY, Tapas Kumar MAITI, Sandip BHATTACHARYA, Takahiro IIZUKA, Hideyuki KIKUCHIHARA, Mitiko MIURA-MATTAUSCH, Hafizur RAHAMAN, Sadayuki YOSHITOMI, Dondee NAVARRO, Hans Jürgen MATTAUSCH, "Prevention of Highly Power-Efficient Circuits due to Short-Channel Effects in MOSFETs" in IEICE TRANSACTIONS on Electronics,
vol. E102-C, no. 6, pp. 487-494, June 2019, doi: 10.1587/transele.2018ECP5046.
Abstract: This report focuses on an optimization scheme of advanced MOSFETs for designing CMOS circuits with high power efficiency. For this purpose the physics-based compact model HiSIM2 is applied so that the relationship between device and circuit characteristics can be investigated properly. It is demonstrated that the short-channel effect, which is usually measured by the threshold-voltage shift relative to long-channel MOSFETs, provides a consistent measure for device-performance degradation with reduced channel length. However, performance degradations of CMOS circuits such as the power loss cannot be predicted by the threshold-voltage shift alone. Here, the subthreshold swing is identified as an additional important measure for power-efficient CMOS circuit design. The increase of the subthreshold swing is verified to become obvious when the threshold-voltage shift is larger than 0.15V.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2018ECP5046/_p
Copy
@ARTICLE{e102-c_6_487,
author={Arnab MUKHOPADHYAY, Tapas Kumar MAITI, Sandip BHATTACHARYA, Takahiro IIZUKA, Hideyuki KIKUCHIHARA, Mitiko MIURA-MATTAUSCH, Hafizur RAHAMAN, Sadayuki YOSHITOMI, Dondee NAVARRO, Hans Jürgen MATTAUSCH, },
journal={IEICE TRANSACTIONS on Electronics},
title={Prevention of Highly Power-Efficient Circuits due to Short-Channel Effects in MOSFETs},
year={2019},
volume={E102-C},
number={6},
pages={487-494},
abstract={This report focuses on an optimization scheme of advanced MOSFETs for designing CMOS circuits with high power efficiency. For this purpose the physics-based compact model HiSIM2 is applied so that the relationship between device and circuit characteristics can be investigated properly. It is demonstrated that the short-channel effect, which is usually measured by the threshold-voltage shift relative to long-channel MOSFETs, provides a consistent measure for device-performance degradation with reduced channel length. However, performance degradations of CMOS circuits such as the power loss cannot be predicted by the threshold-voltage shift alone. Here, the subthreshold swing is identified as an additional important measure for power-efficient CMOS circuit design. The increase of the subthreshold swing is verified to become obvious when the threshold-voltage shift is larger than 0.15V.},
keywords={},
doi={10.1587/transele.2018ECP5046},
ISSN={1745-1353},
month={June},}
Copy
TY - JOUR
TI - Prevention of Highly Power-Efficient Circuits due to Short-Channel Effects in MOSFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 487
EP - 494
AU - Arnab MUKHOPADHYAY
AU - Tapas Kumar MAITI
AU - Sandip BHATTACHARYA
AU - Takahiro IIZUKA
AU - Hideyuki KIKUCHIHARA
AU - Mitiko MIURA-MATTAUSCH
AU - Hafizur RAHAMAN
AU - Sadayuki YOSHITOMI
AU - Dondee NAVARRO
AU - Hans Jürgen MATTAUSCH
PY - 2019
DO - 10.1587/transele.2018ECP5046
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E102-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2019
AB - This report focuses on an optimization scheme of advanced MOSFETs for designing CMOS circuits with high power efficiency. For this purpose the physics-based compact model HiSIM2 is applied so that the relationship between device and circuit characteristics can be investigated properly. It is demonstrated that the short-channel effect, which is usually measured by the threshold-voltage shift relative to long-channel MOSFETs, provides a consistent measure for device-performance degradation with reduced channel length. However, performance degradations of CMOS circuits such as the power loss cannot be predicted by the threshold-voltage shift alone. Here, the subthreshold swing is identified as an additional important measure for power-efficient CMOS circuit design. The increase of the subthreshold swing is verified to become obvious when the threshold-voltage shift is larger than 0.15V.
ER -
English
