We have developed a new planar lightwave circuit (PLC) platform eliminating Si terraces for hybrid integrated optical modules. This PLC platform has the advantage of a lower fabrication cost than the conventional PLC platform with an Si terrace, because it does not require fabrication processes such as Si terrace forming and mechanical polishing. Using our new PLC platform structure, we fabricated a transceiver for optical access networks and an 8-channel multi-channel photoreceiver for wavelength division multiplexing (WDM) interconnection systems.

This paper describes design techniques for suppressing crosstalk in an optical transceiver module using PLC-hybrid-integration technologies and for achieving burst-mode operation with high sensitivity and wide dynamic range using CMOS-IC technologies. An arrangement that reduces the electrical crosstalk to less than -100 dB was designed using three-dimensional electromagnetic field analysis. The configurations of a newly developed instantaneous-response CMOS LD driver circuit is also described and instantaneous-response CMOS receiver circuit techniques are reviewed. With these techniques, we have succeeded in building optical transceiver modules for ATM-PON systems using PLC-hybrid-integration and inexpensive standard CMOS-IC fabrication processes. Under full-duplex operation at 156 Mb/s, fabricated transceiver modules showed receiver sensitivity of better than -34 dBm and dynamic range of over 28 dB, which satisfy both the class-B and class-C specifications recommended by ITU-T (International Telecommunication Union-Telecommunication standardization sector) G983.1 for the optical transceiver module for an ONU (optical network unit).

We have developed a new planar lightwave circuit (PLC) platform eliminating Si terraces for hybrid integrated optical modules. This PLC platform has the advantage of a lower fabrication cost than the conventional PLC platform with an Si terrace, because it does not require fabrication processes such as Si terrace forming and mechanical polishing. Using our new PLC platform structure, we fabricated a transceiver for optical access networks and an 8-channel multi-channel photoreceiver for wavelength division multiplexing (WDM) interconnection systems.

A 1.55-µm hybrid integrated wavelength-converter module was fabricated using a two-channel spot-size converter integrated semiconductor optical amplifier (SS-SOA) on a planar-lightwave-circuit (PLC) platform. Clear eye opening and penalty-free wavelength conversion were obtained at 2.5-Gb/s modulation with a wide wavelength difference of 46 nm. The module showed good characteristics including low insertion loss (0.1 dB), and high conversion efficiency (-0.2 dB). It also showed stable wavelength conversion for as wide as a 13 temperature range.

A 1.55-µm hybrid integrated wavelength-converter module was fabricated using a two-channel spot-size converter integrated semiconductor optical amplifier (SS-SOA) on a planar-lightwave-circuit (PLC) platform. Clear eye opening and penalty-free wavelength conversion were obtained at 2.5-Gb/s modulation with a wide wavelength difference of 46 nm. The module showed good characteristics including low insertion loss (0.1 dB), and high conversion efficiency (-0.2 dB). It also showed stable wavelength conversion for as wide as a 13 temperature range.

We describe the fabrication method and characteristics of hybrid external cavity lasers composed of a spot-size converter integrated LD (SS-LD) and a UV written Bragg grating in a planar lightwave circuit (PLC) on a Si substrate. The SS-LD is passively aligned on a Si platform formed in the PLC, and the UV grating is created in the PLC with ArF laser irradiation through a phase mask. This structure enables us to fabricate a stable single-mode laser with a precisely controllable oscillation wavelength. By using the above techniques, we obtained a threshold current of 7-8 mA and a side mode suppression of 37 dB for an external cavity laser operating at 1.3 µm. Moreover, we successfully demonstrated a four-channel external cavity laser with a wavelength interval of 2 nm 0.1 nm by integrating 4 SS-LDs on a PLC and controlling the Bragg wavelengths with ArF laser irradiation without a phase mask.

We review recent progress in integrated photonics devices and their applications for datacom. In addition to current technology used in 100-Gigabit Ethernet (100GbE) with a compact form-factor of the transceiver, the next generation of technology for 400GbE seeks a larger number of wavelengths with a more sophisticated modulation format and higher bit rate per wavelength. For wavelength scalability and functionality, planar lightwave circuits (PLCs), such as arrayed waveguide gratings (AWGs), will be important, as well higher-order-modulation to ramp up the total bit rate per wavelength. We introduce integration technology for a 100GbE optical sub-assembly that has a 4λ x 25-Gb/s non-return-to-zero (NRZ) modulation format. For beyond 100GbE, we also discuss applications of 100GbE sub-assemblies that provide 400-Gb/s throughput with 16λ x 25-Gb/s NRZ and bidirectional 8λ x 50-Gb/s four-level pulse amplitude modulation (PAM4) using PLC cyclic AWGs.

This paper describes design techniques for suppressing crosstalk in an optical transceiver module using PLC-hybrid-integration technologies and for achieving burst-mode operation with high sensitivity and wide dynamic range using CMOS-IC technologies. An arrangement that reduces the electrical crosstalk to less than -100 dB was designed using three-dimensional electromagnetic field analysis. The configurations of a newly developed instantaneous-response CMOS LD driver circuit is also described and instantaneous-response CMOS receiver circuit techniques are reviewed. With these techniques, we have succeeded in building optical transceiver modules for ATM-PON systems using PLC-hybrid-integration and inexpensive standard CMOS-IC fabrication processes. Under full-duplex operation at 156 Mb/s, fabricated transceiver modules showed receiver sensitivity of better than -34 dBm and dynamic range of over 28 dB, which satisfy both the class-B and class-C specifications recommended by ITU-T (International Telecommunication Union-Telecommunication standardization sector) G983.1 for the optical transceiver module for an ONU (optical network unit).

We present a full description of a polarization-independent athermal differential quadrature phase shift keying (DQPSK) demodulator that employs silica-based planar lightwave circuit (PLC) technology. Silica-based PLC DQPSK demodulator has good characteristics including low polarization dependence, mass producibility, etc. However delay line interferometer (DLI) of demodulator had the large temperature dependence of its optical characteristics, so it required large power consumption to stabilize the chip temperature by the thermo-electric cooler (TEC). We previously made a quick report about an athermal DLI to reduce a power consumption by removing the TEC. In this paper, we focus on the details of the design and the fabrication method we used to achieve the athermal characteristics, and we describe the thermal stability of the signal demodulation and the reliability of our demodulator. We described two athermalization methods; the athermalization of the transmission spectrum and the athermalization of the polarization property. These methods were successfully demonstrated with keeping a high extinction ratio and a small footprint by introducing a novel interwoven DLI configuration. This configuration can also limit the degradation of the polarization dependent phase shift (PDf) to less than 1/10 that with the conventional configuration when the phase shifters on the waveguide are driven. We used our demodulator and examined its demodulation performance for a 43 Gbit/s DQPSK signal. We also verified its long-term reliability and thermal stability against the rapid temperature change. As a result, we confirmed that our athermal demodulator performed sufficiently well for use in DQPSK systems.