This letter proposes a microstrip band elimination filter having an optically controlled small gap on a resonant section for the shift of the eliminated frequency range using the semiconductor plasma. The basic characteristics of this filter are analized theoretically utilizing the (FD)2TD method.

For the effective control of microwaves in the frequency domain, we propose a new method utilizing current distributions of standing waves on the terminated microstrip line. We analized a short ended microstrip line using the (FD)2TD method to indicate the effectiveness of our proposal. Further we proposed an optically controlled microstrip filter as an application of this method.

Field distributions and energy flows of the surface waves excited in singlelayer-overcoated gratings are evaluated in order to investigate the behavior of the resonance absorption in the grating.

In this letter, the effectiveness of the quasi-TEM approximation is studied for the microstrip line including optically induced semiconductor plasma region. This approximation is considered to be efficient under several restrictions such as the upper limit of the microwave frequency and the plasma density.

For a method to control the microwave coupled lines with optically induced plasma effectively, we propose the selective mode-control method, which restricts controlled modes to a selected one. We analyzed the basic characteristics of coupled microstrip lines theoretically by using the spectral domain technique and indicated the effectiveness of this method with the aid of numerical results. Further, we designed an optically controlled change-over switch as an application of this method.

Reaction mechanisms in remote plasma CVD (in which plasma excitation of source meterials and film deposition are spatially separated) of SiO2 using activated oxygen species and pure silane (SiH4) were discussed in two destinct cases in a viewpoint of vapor phase reactions. Under high pressures of 50500 mTorr, activated oxygen species and SiH4 could collide with each other many times in the vapor phase. SiH4 was decomposed by chemical reactions due to the collisions generating chemically active precursors such as SiHn (0n3) for film deposition. Nearly stoichiometric films with low hydrogen content were obtained at low temperatures of around 300. Under a pressure of 5 mTorr, the oxygen species and SiH4 could scarcely collide with each other due to a long mean free path resulting no decomposition of SiH4. Insufficient surface reactions between relatively stable SiH4 and activated oxygen species yielded many O-H bonds in deposited films. Electrical properties of the films and the interfaces of SiO2/Si were characterized.

Plasmaless etching using ClF3 gas has been investigated on nitride films with different composition. For the sputter deposited and thermally grown silicon nitride films containing no hydrogen, the etch rate increases and the activation energy decreases with increase of the composition ratio of silicon to nitrogen between 0.75 and 1.3. This fact indicates that the etching is likely to proceed through the reaction between Si and ClF3. The native oxide on the silicon-nitride films can also be removed with ClF3 gas. Ultra-violet light irradiation from a low pressure mercury lamp remarkably accelerates the removal of the native oxide and the etch rate of the thermally grown silicon-nitride films. For the plasma deposited films, the etch rate is strongly accelerate with increasing hydrogen content in the films, but the activation energy hardly depends on the bounded hydrogen in the films, consistent with the results for Si etching.

A yellow light emitting display using neon-hydrogen-argon mixture as filling gas is presented. Strong "monochromatisation" of the emitted light is reported for the first time on the wavelength λ585.3 nm. Experimental results on the dependence of the "monochromatisation effect" is given for various pressure values and filling gas composition. It is underlined the existence of a process of selective population of the upper level 3p[1/2]0 of the transition corressponding to the wavelength 585.3 nm. The obtained results are discussed in relation with the reported results on yellow light laser in which a discharge in neon-hydrogen mixture is used for laser radiation generation at λ585.3 nm. The proposed explanation of different authors on the upper level population through radiative or dissociative recombination of neon ions is discussed and a new hypothesis is advanced for the strong monochromatisation observed in neon-hydrogen or neon-hydrogen-argon filled displays. According to this hypothesis, in the feeding process of the upper level 3p[1/2]0 are taking part the neon metastable states too. If such an assumption will come true, cyclic processes in yellow light generation might appear.