Thin films of carbon (C)-sulfur (S) compound were formed by plasma CVD (PCVD) at the special chemical condition. The reactor has a parallel plate electrode system and was operated at a discharge frequency of 13.56 MHz with using a mixture gas of argon (Ar), methane (CH4) and SF6. The deposition was performed on a substrate placed on the grounded electrode. Atomic composition of the film was observed to depend on the gas mixture ratio. The sulfur atom density was increased up to 30% with using a mixture gas at a pressure of 0.1 Torr and at a flow rate of 20, 20 and 50 SCCM for Ar, CH4 and SF6, respectively. It was expected that the C-S compounds were deposited under the condition of F atom elimination by forming HF.

For plasma simulations, we developed a one-dimensional (1d) Object-Oriented Particle-in-Cell code for X11-based Unix workstations (XOOPIC) by modifying the current two-dimensional version which was originally developed by PTSG (Plasma theory and simulation group) in the University of California at Berkeley. We implemented a simplified field solve and current deposition in the code. We retained three components of particle velocity, although the spatial variation for particle position and field components is limited to one dimension. To verify the function of the 1d code, we perform simulations with typical models such as the Child-Langmuir current model and electromagnetic wave propagation in plasma. In both cases, the simulation results quantitatively agree with the theory.

The long spikes have been often recorded at the multiples of the electron cyclotron frequency in the ionograms of the topside sounders observed in low latitudes. There has not been sufficient explanation for the physical cause for occourrence of the long spike so far. Here, by interpreting this phenomenon as receiving the trapped cyclotron harmonic wave, some analyses for the length of spike are done not only from the viewpoint of the sweeping property of the frequency spectrum of the transmitted pulse but also from that of the mutual positional relation between the propagation path and the orbit of the sounder. The cause of forming a single spike and a graphical calculation method for the long spike are proposed, respectively. Thus, the cause and the fine structure of long spike consisting of superposed spikes are clarified.

With the progress of LSI technology, the electronic device size is presently scaling down to the nano-meter region. In such an ultrasmall device, it is indispensable to take quantum mechanical effects into account in device modeling. In this paper, we first review the approaches to the quantum mechanical modeling of carrier transport in ultrasmall semiconductor devices. Then, we propose a novel quantum device model based upon a direct solution of the Boltzmann equation for multi-dimensional practical use. In this model, the quantum effects are represented in terms of quantum mechanically corrected potential in the classical Boltzmann equation.

In the spatial network method (SNM) for the vector potential, both the current continuity law including polarization vector and the conservation law of generalized momentum including vector potential field can introduce simpler expressions for dispersive property than that by the electromagnetic field variables. But for the anisotropic medium conditions, the conventional expanded node expression has some difficulties in treating the coupling mechanism among field variables. On the other hand, in the condensed node expression, in which all field components exist at each node, every connections among field components can be simply formulated. In this paper, after proposing the condensed node spatial network method for the vector potential, the advantage of the method such as performing the simplified formulation by utilization of both the vector potential and the condensed node expressions is presented for the magnetized plasma which has the gyro-anisotropy. The validity of the computation is shown by some examples such as Faraday rotation.

This paper presents scattering characteristics of a TE electromagnetic plane wave by a photo-induced plasma strip grating in a semiconductor slab at millimeter wave frequencies. The characteristics are analyzed by using the moment method and estimated numerically over a frequency band from 30-50 GHz. It is shown that the resonance anomaly in the grating can be controlled by changing not only the periodic light illumination pattern but also the plasma density.

The performance of AC plasma displays has been improved in the area of brightness and contrast, while significant advances in image quality are still required for the HDTV quality. In particular, in full color motion video, motion artifacts and lack of color depth are still visible in some situations. These motional artifacts are mitigated as the number of the subfields increases, usually at the cost of losing brightness or increasing driving circuitry. Therefore, it is still one of our great concerns to find out the optimized subfield configuration through weighting and order of each subfield, and their coding of combination. For evaluation and improvement of motion picture disturbance, we have established a procedure that fully simulates the image quality of displays which utilize the subfield driving scheme. The simulation features virtually located sensor pixels on human retina, eye-tracking sensor windows, and a built-in spatial low pass filter. The model pixelizes the observers retina like a sensor chip in a CCD camera. An eye-tracking sensor window is assigned to every light emission from the display, to calculate the emissions from one to four adjoining pixels along the trajectory of motion. Through this model, a scene from original motion picture without disturbance is transformed into the still image with simulated disturbance. The integration of the light emission from adjoining pixels through the window, also functions as a built-in spatial low pass filter to secure the robust output, considering the MTF of the human eye. Both simulation and actual 42-in-diagonal PDPs showed close results under various conditions, showing that the model is simple, but reasonable. Through the simulation, general properties of the subfield driving scheme for gray scale have been elucidated. For example, a PWM-like coding offers a better performance than an MSB-split coding in many cases. The simulation also exemplifies the motion picture disturbance as a non-linear filter process caused by the dislocation of bit weightings, suggesting that tradeoffs between disturbance and resolution in motion area are mandatory.

Attenuated total reflection (ATR) properties and scattered light properties were measured for Ag thin films and arachidic acid (C20) Langmuir-Blodgett (LB) ultrathin films on the Ag thin films to obtain the information about their complex dielectric constants and surface roughness utilizing an excited surface plasmon polariton. The complex dielectric constants for the Ag thin films and the C20 LB films were obtained by fitting the calculated ATR curves to the experimental ones. The surface roughnesses of these films were estimated by the angular distribution of the scattered light assuming the Gaussian function as an autocorrelation function and a linear superposition of roughness spectra. The angular spectra strongly depended on the roughness parameters: the transverse correlation length σ and the surface corrugation depth δ. The experimental angular distributions were explained by some pairs of σ and δ. It was suggested that the surface roughness of the C20 LB films changed with the number of monolayers since the angular spectra varied with the number of the C20 LB monolayers on the Ag films. It is thought that the measurement of the scattered light is useful to evaluate surface roughnesses of LB ultrathin films.

The cell structure of surface discharge ACPDPs with a long gap between the sustaining electrodes achieves high luminous efficiency. However, the long gap cell structure causes high firing voltage and thus makes driving more difficult than with the conventional gap cell structure. The rise in firing voltage in the long gap cell structure could not be explained by Paschen's scaling law. We derived a new governing equation for firing voltage, involving the influence of a non-uniform electric field, to investigate this deviation from Paschen's law. From the calculated results we found that changing the gap length corresponds to the change in the degree of distortion of the electric field between the sustaining electrodes.

When moving images are displayed on color PDPs, motional artifacts such as disturbances of gray scales and colors are often observed. Reduction of the disturbances is essential in achieving PDPs with acceptable picture quality for TV use. The moving picture quality has been improved by using a modified-binary-coded light-emission-period scheme and a 3dimensional (2D in space and 1D in time) scattering technique. In the 10-sub-field modified-binary-code scheme for 256 gray level expression, sub-field B (of period equivalent to 64) and C (128) of conventional 8-sub-field binary-coded scheme are added and then re-distributed into four sub-fields D (48). The modifiedbinary-coded scheme therefore has the light-emitting-period ratio 1:2:4:8:16:32:48:48:48:48. The maximum period, 128 of the conventional, is reduced to 48. By using the modified-binary-coded scheme, the motional artifacts are reduced significantly, but still perceptible because they appear in forms of continuous lines. In order to make the disturbance less conspicuous, a 3D scattering technique is introduced. The technique has been made possible because of the redundancies of the modified-binary-coded scheme: namely, (1) the position of sub-field-block A (63) can be placed at one of the five positions among four sub-fields D (48), (2) there are various choices when newly assigning one of the four sub-fields D, (3) one can arbitrarily choose whether or not to assign a new sub-field D between the gray levels 48-63, 96-111, 144-160, and 192-207. By randomly selecting one of these emission patterns, the disturbances change their forms from continuous lines to scattered dots. The randomization can be performed at each horizontal line of the display, at each vertical line, at each pixel, of at each TV field. An appreciable improvement of moving picture quality has been realized without influencing the still image.

We studied the application of precursor solutions that can be fired into oxides to form a protective layer for AC-type Plasma Display Panel (AC-PDP). Our study of alkoxide and metallic soap as MgO precursors revealed that the crystallinity of MgO films depends on the starting substance. Since the electric discharge characteristics of a panel and the lamination effect of the protective layer depend on precursors, it was confirmed that binders having higher crystallinity provide better characteristics. Our study revealed that a compound-oxide film has high crystallinity. The application of a Ba0.6Sr0.4Gd2O4 formation solution to a binder and the application of a Sr0.6Mg0.4Gd2O4 formation solution to a protective layer both are seemed promising We also found that a double-layer film, made by forming a protective layer of fine MgO powder and a Ba0.6Sr0.4Gd2O4 binder, on top of a protective layer made of fine MgO powder and a MgO binder, provides a luminous efficiency 5.3 times higher than that of sputtered MgO film which is one of candidates for the large panel, and the conventional electron beam evaporation is not suitable for the large panel. We further found that a triple-layer protective film made by forming a thin film of Sr0.6Mg0.4Gd2O4 provides low voltages of 1 V in firing voltage (Vf) and 35 V in sustaining voltage (Vs) compared to the double-layer film and provides a luminous efficiency 5.5 times higher than that of sputtered MgO film. A life test revealed the triple-layer film in particular providing a useful life of more than 10,000 hours. From these findings, we concluded that the compound-oxides which is composed of alkaline-earth-metal and rare-earth-element could be applied effectively to a protective layer for AC-PDP.

In order to improve the sensitivity of micromachined sensors applied with electrostatic fields and increase their actuated force of electrostatic micromachined actuators, "electrets," which are dielectrics carrying non equilibrium permanent space charges of polarization distribution, are very important. In this paper, positively corona charged silicon dioxide electrets, which are deposited by Plasma Chemical Vapor Deposition (PCVD) and thermally oxidized, are investigated. Physical studies will be described, in which the charge stability is correlated to Thermally Stimulated Current (TSC) measurements and to Electron Spin Resonance (ESR) analysis. Some intrinsic differences have been observed between materials. The electrets with superior long-term charge stability contain 10,000 times as much E' center (Si3 as the ones with inferior long-term charge stability. Finally, some investigations on the long-term charge storage mechanism of the positively charged silicon dioxide electret will be described.

This paper presents the scattering characteristics of a TE electromagnetic plane wave by metallic strip gratings on an optically plasma-induced silicon slab at millimeter wave frequencies. The characteristics were analyzed by using the spectral domain Galerkin method and estimated numerically. We examined to control the resonance anomaly by changing the optically induced plasma density, and the metallic strip grating structures were fabricated on highly resistive silicon. The optical control characteristics of the reflection, and the forward scattering pattern by the grating structures, were measured at Q band and are discussed briefly with theory.

Protective layers in AC plasma display panels (PDP) are usually formed by vacuum vapor deposition or sputtering. It is important to study the protective MgO layer by means of screen-printing for fabricating a large size PDP and reducing its cost. With the objectives of enlarging the panel size and reducing cost, we studied the fabrication of the protective MgO layer by means of screen-printing. In this study, we succeeded in lowering the drive voltage by using a MgO powder prepared by vapor phase oxidation instead of conventional decomposition of the magnesium salt. Further, by adding a MgO liquid binder, we attained a good luminous efficiency twice as high as that attained with a sputtered protective layer and lowered the drive voltage. When this protective layer was combined with He-Xe gas enclosure, the half-life of luminance was 5,000 hours. With Ne-Xe gas, the luminance deteriorated no more than 40% after 5,000 hours. A screen-printed protective MgO layer containing no MgO liquid binder showed a short half-life of 800 hours even with the use of Ne-Xe gas. In this case, the discharge voltage changed greatly and some cells did not discharge. It is concluded that the combination of an ultrafine MgO powder prepared by vapor phase oxidation and a MgO liquid binder can clear the way for making AC PDPs with a long lifetime, high efficiency, and low voltage a practical reality.

The realization of scientific manufacturing of ULSIs in the 21st century will require the development of a technical infrastructure of "Ultra Clean Technology" and the firm establishment of the three principles of high performance processes. Three principles are 1)Ultra Clean Si Wafer Surface, 2)Ultra Clean Processing Environment, and 3)Perfect Parameter controlled process. This paper describes the methods of resolving the problems inherent in Ultra Clean Technology, taking as examples issues in quarter-micron or more advanced semiconductor process and manufacturing equipment, particularly when faced with the challenges of plasma dry etching. Issues indispensable to the development of tomorrow's highly accurate and reliable plasma dry etching equipment are the development of technologies for the accurate measurement of plasma parameters, ultra clean gas delivery systems, chamber cleaning technology on an in-situ basis, and simulating the plasma chemistry.This paper also discusses the standardization of semiconductor manufacturing equipment, which is considered one of the ways to reduce the steep rise in production line construction costs. The establishment of Ultra Clean Technology also plays a vital role in this regard.

This work deals with thermal-noise modeling for silicon vertical bipolar junction transistors (BJTs) and relevant integrated circuits (ICs) operating at low currents. The two-junction BJT compact model is consistently derived from the thermal-noise generalization of the Shockley semiconductor equations developed in work which treats thermal noise as the noise associated with carrier velocity fluctuations. This model describes BJT with the Itô non-linear stochastic-differential-equation (SDE) system and is suitable for large-signal large-fluctuation analysis. It is shown that thermal noise in silicon p-n-junction diode contributes to "microplasma" noise. The above model opens way for a consistent-modeling-based design/optimization of bipolar device noise performance with the help of theory of Itô's SDEs.

A conventional anode coupled plasma etching process has been developed to etch 300 µm-deep cavities and 600 µm-through holes with nearly vertical sidewalls into single crystal silicon. An optimized SF6/O2 gas mixture results in a nearly vertical etching profile. A silicon wafer was fabricated with a large number of cavities and through holes with less than 1 percent uniformity. It was also experimentally confirmed that this process can be used to etch vertical cavities and through holes in single-crystal silicon with any orientation. This process has the advantage of unlimited etching depth and etching patterns. Advantages in mechanical strength are obtained because a micro-curve is formed at the bottom edge of the cavities. This etching process developed on a conventional plasma etching system was utilized to fabricate a torsional vibrator that consists of single-crystal silicon and Pyrex glass.

The optical waveguides containing phthalocyanine as an optically active material were fabricated and transmission properties were investigated experimentally and numerically. The positive refractive index change was observed in the glass waveguide with a vanadyl phthalocyanine thin film as a top layer. The thermal influence on refractive index change was estimated by surface plasmon measurements.

A new evaluation technique of hot carrier degradation is proposed and applied to practical evaluation of p-channel polycrystalline silicon thin film transistors (TFT). The proposed technique introduces emission microscopy which is particularly effective for evaluating TFT devices. We have developed an automatic measurement system in which measurement of the electrical characteristics and monitoring the photo emission are done simultaneously. Using this system, we have identified the dominant mechanism of hot carrier degradation in TFTs, and evaluated the effect of plasma hydrogenation on hot carrier degradation.

Plasma damage to gate oxide is studied using the test structures with various length antennas. It is shown that the plasma damage to gate oxide can be monitored quantitatively by measuring charge to breakdown (QBD). From the QBD measurements, it is confirmed that the degradation occurs in the duration of over-etching but not in the duration of main etching. The breakdown spots in gate oxide are detected by a photon emission method. The breakdown are caused by plasma damage at the LOCOS edge. A LOCOS structure plays an important role for the degradation by the plasma damage.