Evaluation of Plasma Damage to Gate Oxide
Summary :
Plasma damage to gate oxide is studied using the test structures with various length antennas. It is shown that the plasma damage to gate oxide can be monitored quantitatively by measuring charge to breakdown (QBD). From the QBD measurements, it is confirmed that the degradation occurs in the duration of over-etching but not in the duration of main etching. The breakdown spots in gate oxide are detected by a photon emission method. The breakdown are caused by plasma damage at the LOCOS edge. A LOCOS structure plays an important role for the degradation by the plasma damage.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E77-C No.3 pp.453-458
- Publication Date
- 1994/03/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
- Category
- Process Technology
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Yukiharu URAOKA, Koji ERIGUCHI, Tokuhiko TAMAKI, Kazuhiko TSUJI, "Evaluation of Plasma Damage to Gate Oxide" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 3, pp. 453-458, March 1994, doi: .
Abstract: Plasma damage to gate oxide is studied using the test structures with various length antennas. It is shown that the plasma damage to gate oxide can be monitored quantitatively by measuring charge to breakdown (QBD). From the QBD measurements, it is confirmed that the degradation occurs in the duration of over-etching but not in the duration of main etching. The breakdown spots in gate oxide are detected by a photon emission method. The breakdown are caused by plasma damage at the LOCOS edge. A LOCOS structure plays an important role for the degradation by the plasma damage.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_3_453/_p
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@ARTICLE{e77-c_3_453,
author={Yukiharu URAOKA, Koji ERIGUCHI, Tokuhiko TAMAKI, Kazuhiko TSUJI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Evaluation of Plasma Damage to Gate Oxide},
year={1994},
volume={E77-C},
number={3},
pages={453-458},
abstract={Plasma damage to gate oxide is studied using the test structures with various length antennas. It is shown that the plasma damage to gate oxide can be monitored quantitatively by measuring charge to breakdown (QBD). From the QBD measurements, it is confirmed that the degradation occurs in the duration of over-etching but not in the duration of main etching. The breakdown spots in gate oxide are detected by a photon emission method. The breakdown are caused by plasma damage at the LOCOS edge. A LOCOS structure plays an important role for the degradation by the plasma damage.},
keywords={},
doi={},
ISSN={},
month={March},}
Copy
TY - JOUR
TI - Evaluation of Plasma Damage to Gate Oxide
T2 - IEICE TRANSACTIONS on Electronics
SP - 453
EP - 458
AU - Yukiharu URAOKA
AU - Koji ERIGUCHI
AU - Tokuhiko TAMAKI
AU - Kazuhiko TSUJI
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1994
AB - Plasma damage to gate oxide is studied using the test structures with various length antennas. It is shown that the plasma damage to gate oxide can be monitored quantitatively by measuring charge to breakdown (QBD). From the QBD measurements, it is confirmed that the degradation occurs in the duration of over-etching but not in the duration of main etching. The breakdown spots in gate oxide are detected by a photon emission method. The breakdown are caused by plasma damage at the LOCOS edge. A LOCOS structure plays an important role for the degradation by the plasma damage.
ER -
English
