AFM/STM observations were performed on sub nm thick C-Au-S film by co-operation process of plasma CVD and sputtering with using CH4, SF6 and Ar mixture gas and Au plate discharge electrode. From the refractive index values, the conductive granular molecules with a size of 0.4-0.6 nm were expected to exist in the film. For the film at thickness similar to the molecular size, Ra (arithmetic mean departures of roughness profile from the mean line) values were measured to be 0.712/6.10 nm by AFM/STM measurement, respectively. The one order large STM Ra value compared to the AFM Ra value suggests that the film contains conductive granular molecules.

An amperometric thin-film glucose biosensor based on a plasma-polymerized film using hexamethyldisiloxane as the monomer is presented. The plasma-polymerized film, achieved in plasma in the vapor phase, offers a new alternative for use in the design of the electrode-enzyme interface of biosensors. The film shows promise of high sensor performance; namely, rapid sensor response, low noise, a wide dynamic range, reproducibility, and reduction in the effects of interfering materials such as ascorbic acid. In this study, we examined the usefulness of the hexamethyldisiloxane plasma-polymerized film and investigated how the thickness of the plasma-polymerized film on a platinum electrode affected sensor characteristics: the selectivity for hydrogen peroxide versus interfering agents, the sensor response due to enzymatic reaction, and oxygen depletion.

We studied nitrogen incorporation in Al2O3 gate dielectrics by nitrogen plasma and examined the dependence of the electrical properties on the nitrogen incorporation. We found that the nitrogen concentration and profile in Al2O3 films thinner than 3 nm can be controlled by the substrate temperature and the plasma conditions. The electrical characterization showed that the plasma nitridation suppresses charges in Al2O3 films and prevents dopant penetration through the gate dielectric without increasing the leakage current or the interfacial trap density. We also demonstrated the improved performance of a metal-oxide-semiconductor field effect transistor by using a plasma nitrided Al2O3 gate dielectric. These results indicate that plasma nitridation is a promising method for improving the electrical properties of Al2O3 gate dielectrics.

A new bipolar scan waveform is proposed to increase the light emission duty factor by achieving the fast address in AC plasma display panel (AC-PDP). The new bipolar scan waveform consists of two-step scan pulse, which can separate the address discharge mode into two different discharge modes: a space charge generation mode and a wall charge accumulation mode. By adopting the new bipolar scan waveform, the light emission duty factor is increased considerably under the single scan ADS driving scheme due to the reduction of address time per single subfield.

Based on an experimental fact that surface wave plasmas excited by strongly coupled microwave through thin dielectric windows show nearly perfect absorption of microwave and, after diffusion, form a widely uniform dense plasma. A plasma with an uniformity of 5% over an area of 50 cm 60 cm was produced. The plasma produced by application of 2400 W total microwave power gives 1 1011 cm-3 in density and 1.5 eV in electron temperature.

A low energy plasma based on an electron discharge was investigated for the pre-epi clean of silicon wafers and for plasma enhanced homo and hetero epitaxial growth of Si and SiGe layers. VS were produced in a short, completely dry process sequence consisting of LEPC and LEPECVD only. The wafer/epilayer interface obtained in this process sequence was suitable to grow high quality VS with low surface roughness and dislocation densities. Based on this process and its implementation in a 200/300 mm single wafer cluster tool, a high volume and economical production of VS seems possible.

This paper describes an experimental study on resonant properties of the plasma-wave field-effect transistors (PW-FET's). The PW-FET is a new type of the electron devices, which utilizes the plasma resonance effect of highly dense two-dimensional conduction electrons in the FET channel. Frequency tunability of plasma-wave resonance in the terahertz range was experimentally investigated for sub 100-nm gate-length GaAs MESFET's by means of laser-photo-mixing terahertz excitation. The measured results, including the first observation of the third-harmonic resonance in the terahertz range, however, fairly deviate from the ideal characteristics expected for an ideal 2-D confined electron systems. The steady-state electronic charge distribution in the MESFET channel under laser illumination was analyzed to study the effect of insufficient carrier confinement on the frequency tunability. The simulated results support the measured results. It was clarified that an ideal heterostructure 2-D electron confinement is essential to assuring smooth, monotonic frequency tunability of plasma-wave resonance.

It is very difficult to simultaneously achieve power and cost reductions in address-driver circuits of a plasma-display panel (PDP) unit in which an energy-recovery scheme utilizing the resonance of a series-connected inductor and electrode parasitic capacitors is used. This is because an increase in parasitic capacitance and high-speed circuit operation become necessary as the display panel becomes larger in size and higher in resolution. In particular, low-power operation of address-driver ICs is key to avoiding the installation of heat sinks on the ICs. We propose herein new power-dispersion methods that can greatly reduce the power dissipation of address-driver ICs even when large parasitic capacitance is driven at high speed. The proposed methods enable a reduction in the power dissipation of address-driver ICs without deteriorating the operational speed by dispersing their powers into external resistors, and by supplying power to address-driver ICs in two voltage steps during both rising and falling time intervals when the address changes. Our results indicate that the power dissipation of address-driver ICs and the total cost of the address drive unit of a plasma-display panel can be reduced to 29% and 53%, respectively, compared with those of the ICs and the unit that are driven by the conventional address-driving method.

A new multi-luminance-level subfield method is proposed to reduce the low gray-level contour of an alternate current plasma display panel (AC-PDP). The minimum or maximum luminance level per sustain-cycle can be altered by simultaneously applying the proper auxiliary short pulses. As a result, the multi-luminance levels per one or two sustain pulse pairs can be expressed by properly adjusting the auxiliary short pulses for the one or two sustain-cycle subfields, thereby suppressing a low gray-level contour of AC-PDP.

Near-fields of electromagnetic waves scattered by slightly rough metal surfaces which support the surface plasmon mode at optical frequencies were studied theoretically by using the stochastic functional approach. Fidelity of near-field intensity images, defined by the correlation coefficient between the surface profile and the intensity of the scattered wave field, was investigated in order to discuss field distributions of the surface plasmon on complicated structures. We show that the fidelity strongly depends on the incident wavenumber and polarization when the incident wave corresponds to the surface plasmon mode.

We present the effects of N2O plasma treatment for hot carrier reliability and gate oxide stability in excimer-laser annealed poly-Si TFTs. N2O plasma treatment between SiO2 and poly-Si suppresses both the reduction in mobility caused by hot carrier stress and the Vth shift caused by gate bias stress. The results of XPS spectra and the energy distribution of the trap state density of stressed TFTs show that the introduction of Si-N bonds plays an important role in poly-Si TFT reliability.

Carbon-gold (C-Au) film was formed by co-operation process of plasma CVD and sputtering with using methane and Ar mixture gas and gold plate discharge electrode. Refractive index of 3.1 for the film was obtained at Au atom content of 5.5 atomic%. The optical transmittance was improved significantly in the visible light wavelength range compared to the C-S-Au film reported previously. Au atom distribution in the C-Au film and the electronic polarizabilities were discussed in the relation to the refractive index.

A plasma display panel (PDP) represents gray levels by the pulse number modulation technique that results in undesirable dynamic false contours on moving images. Among the various techniques proposed for the reduction of dynamic false contours, the optimization of the subfield pattern can be most easily implemented without the need for any additional dedicated hardware or software. In this paper, a systematic method for selecting the optimum subfield pattern is presented. In the proposed method, a subfield pattern that minimizes the quantitative measure of the dynamic false contour on the predefined test image is selected as the optimum pattern. The selection is made by repetitive calculations based on a genetic algorithm. Quantitative measure of the dynamic false contour calculated by simulation on the test image serves as a criterion for minimization by the genetic algorithm. In order to utilize the genetic algorithm, a structure of a string is proposed to satisfy the requirements for the subfield pattern. Also, three genetic operators for optimization, reproduction, crossover, and mutation, are specially designed for the selection of the optimum subfield pattern.

A priming effect is studied for a three-electrode, surface-discharge AC-PDP, which has stripe barrier ribs of 0.22 mm pitch. It was found that by keeping the interval between the reset and address pulses within 24 µs, the data pulse voltage can be reduced while the data pulse width can be narrowed due to the priming effect. By adopting the primed addressing technique to the PDP, the data pulse voltage was reduced to 20 V when the data and scan pulse widths were 1 µs. Alternatively, the data pulse width could be narrowed to 0.33 µs when the data pulse voltage was 56 V. 69% of the TV field time could be assigned for the display periods with 12 sub-fields, assuring high luminance display.

This paper describes the numerical analysis for terahertz electromagnetic-wave oscillation/detection properties of plasma-wave field-effect transistors (PW-FET's) and their applications to future smart photonic network systems. The PW-FET is a new type of the electron device that utilizes the plasma resonance effect of highly dense two-dimensional conduction electrons in the FET channel. By numerically solving the hydrodynamic equations for PW-FET's, the plasma resonance characteristics under terahertz electromagnetic-wave absorption are analyzed for three types of FET's; Si MOSFET's, GaAs MESFET's, and InP-based HEMT's. The results indicate that the InP-based sub-100-nm gate-length HEMT's exhibit the most promising oscillation/detection characteristics in the terahertz range with very wide frequency tunability. By introducing the PW-FET's as injection-locked terahertz-frequency-tunable oscillators and terahertz mixers, a new idea of coherent heterodyne detection utilizing terahertz IF (intermediate-frequency) bands is proposed for the future smart photonic network systems that enable real-time adaptive wavelength routing for add-drop multiplexing. The plasma resonance of PW-FET's by means of different frequency generation based on direct photomixing is also proposed as an alternative approach to injection-locked terahertz oscillation. To realize it, virtual carrier excitations by the polariton having photon energy lower than the bandgap of the channel is a possible mechanism.

Magnetic tunnel junctions (MTJ), i.e., structures consisting of two ferromagnetic layers (FM1 and FM2), separated by a very thin insulator barrier (I), have recently attracted attention for their large tunneling magnetoresistance (TMR) which appears when the magnetization of the ferromagnets of FM1 and FM2 changes their relative orientation from parallel to antiparallel in an applied magnetic field. Using an ultrahigh vacuum magnetron sputtering system, a variety of MTJ structures have been explored. Double Hc magnetic tunnel junction, NiFe/Al2O3/Co and FeCo/Al2O3/Co, were fabricated directly using placement of successive contact mask. The tunnel barrier was prepared by in situ plasma oxidation of thin Al layers sputter deposited. For NiFe/Al2O3/Co junctions, the maximum TMR value reaches 5.0% at room temperature, the switching field can be less than 10 Oe and the relative step width is about 30 Oe. The junction resistance changes from hundreds of ohms to hundreds of kilo-ohms and TMR values decrease monotonously with the increase of applied junction voltage bias. For FeCo/Al2O3/Co junctions, TMR values exceeding 7% were obtained at room temperature. It is surprising that an inverse TMR of 4% was observed in FeCo/Al2O3/Co. The physics governing the spin polarization of tunneling electrons remains unclear. Structures, NiFe/FeMn/NiFe/Al2O3/NiFe, in which one of the FM layers is exchange biased with an antiferromagnetic FeMn layer, were also prepared by patterning using optical lithography techniques. Thus, the junctions exhibit two well-defined magnetic states in which the FM layers are either parallel or antiparallel to one another. TMR values of 16% at room temperature were obtained. The switching field is less than 10 Oe and step width is larger than 30 Oe.

We studied a three-wave coupling process occurring in microwave power transmission (MPT) experiment in the ionospheric plasma by performing computer experiments with one-dimensional electromagnetic PIC (Particle-In-Cell) model. In order to examine the spatial variation of the coupling process, we continuously emitted intense electromagnetic wave from an antenna located at a simulation boundary. In the three-wave coupling, a low-frequency electrostatic wave is excited as the consequence of a nonlinear interaction between the forward propagating pump wave and backscattered one. In the computer experiments, low-frequency electrostatic bursts are discontinuously observed in space. The discontinuity of the electrostatic bursts is accounted for by the local electron heating due to the bursts and associated modification of the wave dispersion relation. In a case where the pump wave propagates along the geomagnetic field Bext, several bursts of Langmuir waves are observed. Since the first burst consumes a part of the pump wave energy, the pump wave is weakened and cannot trigger the three-wave coupling beyond the region where the burst occurs. Since the dispersion relation of the Langmuir wave is variable due to the local electron heating by the burst, the coupling condition eventually becomes unsatisfied and the first interaction becomes weak. Another burst of Langmuir waves is observed at a different region beyond the location of the first burst. In the case of perpendicular propagation, the upper hybrid wave, one of the mode branches of the electron cyclotron harmonic waves, is excited. Since the dispersion relation of the upper hybrid wave is less sensitive to the electron temperature, the coupling condition is not easily violated by the temperature increase. As a result, the three-wave coupling periodically takes place in time and eventually the transmission ratio of the microwaves becomes approximately 20% while almost no attenuation of the pump waves is observed after the first electrostatic burst in the parallel case.

Low luminous efficacy is one of the major drawbacks of PDPs, with the discharge being the predominant limiting factor. Numeric simulations granting deeper insight in the core processes of the discharge are presented and the key parameters influencing the plasma efficiency are examined.

Conventional metal-glazed thick-film resistors are applied to Hybrid Integrated Circuits, chip resistors and others. These resistors are usually fired at a high temperature of around 850C on ceramic substrates. Recently, however, attempts have been made to fire some metal-glazed thick-film resistors at lower temperatures on glass substrates for application as the control resistors for the discharge current of dc Plasma Display Panels (PDPs). We have attempted to realize such low-firing-temperature thick-film resistors using Pb2Ru2O7-x as conductive particles, two kinds of lead-borosilicate glasses as binders, and three kinds of metallic oxide as additives, which are fired at 580C on a soda lime glass substrate. The electrical properties of the specimens, 16 kinds in all, fabricated from various combinations of binder glasses, additives and electrode materials have been measured. Effective dimensions of the specimen resistor are 0.25 0.25 mm2 or less in surface area, since extremely small size is required by PDPs. The effect of the combination of additive and binder glass on the conductive particles of Pb2Ru2O7-x has been examined in detail, together with the affinity for electrical conjunction between resistor and electrode.

Short-circuit photocurrents (ISC) utilizing surface plasmon polariton (SPP) excitation were investigated for the merocyanine (MC) LB film photoelectric device. The device has a prism/MgF2/Al/MC LB film/Ag structure. In the attenuated total reflection (ATR) configuration, SPPs were resonantly excited at the interfaces between MgF2 and Al (MgF2/Al) and between Ag and air (Ag/air). The thickness and the dielectric constants of the layers were evaluated from the ATR measurements. Short-circuit photocurrents, ISCs, as a function of the incident angle of the laser beam were observed simultaneously during the ATR measurements. In the ISC curves, large and small peaks were observed, and the peak angles of the ISC almost corresponded to the dip angles of the ATR curves due to the SPP excitations. Electric fields and optical absorptions in the cell were calculated using the dielectric constants and the film thickness obtained from the ATR measurements. The calculated absorption in the MC layer as a function of the incident angle corresponded to the ISC curve. It was thought that the optical absorption in the MC layer affected directly to the profile of the ISC. Furthermore, the calculated absorption in the cell with the prism and the MgF2 layer exhibited much larger than that of the cell without them. It was estimated that the photocurrents were enhanced by the excitation of SPPs in the ATR configuration.