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[Keyword] CMOS LSI(4hit)

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  • Lead Open Detection Based on Supply Current of CMOS LSIs

    Masao TAKAGI  Masaki HASHIZUME  Masahiro ICHIMIYA  Hiroyuki YOTSUYANAGI  Takeomi TAMESADA  

     
    PAPER

      Vol:
    E87-A No:6
      Page(s):
    1330-1337

    In this paper, a test method is proposed to detect lead opens in CMOS LSIs. The test method is based on supply current which flows when test input vectors and AC electric field are provided from the outside of the ICs. Also, an application method of the test input vectors is proposed in this paper. It is shown experimentally that lead opens of SSIs and LSIs will be detected by providing each of the test input vectors per the period of AC electric field applied.

  • Low Power Design Technology for Digital LSIs

    Tadayoshi ENOMOTO  

     
    INVITED PAPER

      Vol:
    E79-C No:12
      Page(s):
    1639-1649

    Discussed here is reduction of power dissipation for multi-media LSIs. First, both active power dissipation Pat and stand-by power dissipation Pst for both CMOS LSIs and GaAs LSIs are summarized. Then, general technologies for reducing Pat are discussed. Also reviewed are a wide variety of approaches (i.e., parallel and pipeline schemes, Chen's fast DCT algorithms, hierarchical search scheme for motion vectors, etc.) for reduction of Pat. The last part of the paper focuses on reduction of Pst. Reducing both Pat and Pst requires that both throughput and active chip areas be either maintained or improved.

  • A 0.9-V, 2.5 MHz CMOS 32-bit Microprocessor

    Hiroaki SUZUKI  Toshichika SAKAI  Hisao HARIGAI  Yoichi YANO  

     
    PAPER-Digital Circuits

      Vol:
    E78-C No:4
      Page(s):
    389-393

    A 32-bit RISC microprocessor "V810" that has 5-stage pipeline structure and a 1 Kbyte, direct-mapped instruction cache realizes 2.5 MHz operation at 0.9 V with 2.0 mW power consumption. The supply voltage can be reduced to 0.75 V. To overcome narrow noise margin, all the signals are set to have rail-to-rail swing by pseudo-static circuit technique. The chip is fabricated by a 0.8 µm double metal-layer CMOS process technology to integrate 240,000 transistors on a 7.4 mm7.1 mm die.

  • A Universal Structure for SDH Multiplex Line Terminals with a Unique CMOS LSI for SOH Processing

    Yoshihiko UEMATSU  Shinji MATSUOKA  Kohji HOHKAWA  Yoshiaki YAMABAYASHI  

     
    PAPER-Communication Systems and Transmission Equipment

      Vol:
    E78-B No:3
      Page(s):
    362-372

    This paper proposes a universal structure for STM-N(N=1, 2, 3, ) multiplex line terminals that only utilizes N chips CMOS LSIs for Section OverHead (SOH) processing. The uniquely configured LSIs are applicable to any STM-N line terminal equipment. Reasonable frame alignment performance attributes, such as the maximum average reframe time, false in-frame time, out-of-frame detection time, and misframe time, are calculated for the configuration. A prototype SOH processing LSI built on 0.8m BiCMOS technology successfully realizes the functions needed for multiplex section termination. The STM-64 frame is also demonstrated using the proposed circuit configuration and prototype LSIs.