This paper presents the strategy of MOS varactor's high-Q optimization, a novel scalable model for the quasi-millimeter-wave MOS varactors, and confirmation results by discrete MOS varactors and VCO measurements. To realize a high-Q MOS varactor in the quasi-millimeter-wave region, low MOS varactor capacitance and low series resistance of unit cell are essential. Downsizing is a key to realize both low capacitance and low resistance. However, it is induced by Cmax/Cmin reduction, simultaneously. Therefore, scalable MOS varactor model is necessary to use optimum MOS varactor to cover various application requirements using same process. Decreasing the MOS varactor's size of W/L =2µm/2µm to 0.5µm/0.26µm, the Q factor increased sevenfold at f =20GHz but Cmax/Cmin is reduced by 60%, by using conventional PSP model, an error of approximately 20% is shown. Proposed model has been improved its accuracy from 18.9% to 0.2% for N+ MOS varactor and from 22.1% to 0.8% for P+ MOS varactor, for minimum size of MOS varactor even if model covers wide dimension range. Also, it has been confirmed this model is covered in two types of layouts. Oscillation frequency and phase noise also have been confirmed by three types of 22GHz VCOs. The accuracy of oscillation frequency is less than 2.5% and that of phase noise at 1MHz offset from carrier is less than 5dB.

A novel resonant circuit consisting of transformer-based switched variable inductors and switched accumulation MOS (AMOS) varactors is proposed to realize an ultrawide tuning range voltage-controlled-oscillator (VCO). The VCO IC is designed and fabricated using 0.11 µm CMOS technology and fully evaluated on-wafer. The VCO exhibits a frequency tuning range as high as 92.6% spanning from 1.20 GHz to 3.27 GHz at an operation voltage of 1.5 V. The measured phase noise of -120 dBc/Hz at 1 MHz offset from the 3.1 GHz carrier is obtained.

Frequency dependent properties of accumulation-mode MOS varactors, which are key elements in many RF circuits, are dominated by Non-Quasi-Static (NQS) effects in the carrier transport. The circuit performances containing MOS varactors can hardly be reproduced without considering the NQS effect in MOS-varactor models. For the LC-VCO circuit as an example it is verified that frequency-tuning range and oscillation amplitude can be overestimated by over 20% and more than a factor 2, respectively, without inclusion of the NQS effect.

This paper presents the design of low-power low-noise 10 GHz CMOS monolithic integrated LC VCOs suitable for data clock recovery architectures in optical receivers of SDH (STM-64) and SONET (OC-192). Optimizations of device parameters and passive components are given in detail. For passive components, differential and single-ended inductor structures as well as MOS varactors with and without lightly doped drain/source (LDD) implantation have been investigated. The VCOs implemented in a 0.18 µm process demonstrate the single-side-band phase noise of as low as -107 dBc/Hz at 1 MHz offset and 21% tuning range while consuming only 7 mW under 1.8 V supply.