In this paper, a novel three-port antenna structure, named 180 antenna hybrid, is proposed and demonstrated. This structure is composed of a Wilkinson power divider with the isolation resistor replaced by an aperture-coupled patch antenna. The equivalent series impedance of the antenna can be adjusted to the required one by properly choosing the dimensions of the patch and the coupling aperture. When a signal is fed to the balanced port of this antenna hybrid, the power is equally split, with equal phases, to the two unbalanced ports. No power is radiated out from the antenna. In the other hand, a signal received from the antenna will be split with equal power but 180 phase difference to the two unbalanced ports. The balanced port is an isolation port. The measurement results showed good agreement with the characteristics to be designed. Three applications of this 180 antenna hybrid are introduced, that is, a balanced mixer, an active transmitting antenna, and a dual-radiation-mode antenna array. The balanced mixer was constructed with diodes directly mounted on the two unbalanced ports of the antenna hybrid. The LO signal is fed from the balanced port and RF signal is received from the antenna. The active transmitting antenna was implemented with feedback configuration. The route from one of the unbalanced port to the balanced port of the antenna hybrid was used as the feedback path. A locking signal may be injected from the other unbalanced port. Finally, through a three-quarter-wavelength microstrip line, the balanced port of the antenna hybrid was connected to another aperture-coupled patch antenna to form a dual-radiation-mode antenna array. The in-phase and out-of-phase radiation patterns of this two-element array can be obtained from two unbalanced ports of the antenna hybrid, respectively.

In this paper, a CMOS down-conversion double-balanced mixer is presented with the modified low voltage design technique. The frequencies of the radio frequency (RF) signal, local oscillator (LO) and intermediate frequency (IF) are 2.4 GHz, 2.3 GHz and 100 MHz, respectively. Measurement results of the proposed mixer exhibit 6.7 dB of conversion gain, -18 dBm of input 1 dB compression point (P-1 dB), -8 dBm of input-referred third-order intercept point (IIP3), and 14.7 dB single-side band (SSB) noise figure (NF) while applying -8 dBm LO power and consumes 3.3 mA from 1.8 V supply voltage. It can provide 0.7 dB conversion gain when the supply voltage reduces to 1.3 V. This mixer was fabricated in a 0.35 µm 1P4M standard digital CMOS process and the die size is 1.5 1.1 mm2.

A direct conversion receiver IC including an on-chip balun, an I/Q mixer, a variable gain amplifier and a 90 phase-shifter is fabricated in a Bi-CMOS technology with 15 GHz transition frequency (fT). This paper demonstrates that cascaded connection of an on-chip balun and a double balanced mixer as the I/Q mixer is effective to achieve a low DC offset and a low second-order distortion, on the basis of both careful examination of the mixer behavior and measurement. Input-referred DC offset voltage of less than 300 µV and spurious free dynamic range (SFDR) of over 67 dB are obtained by measurement. The IC consumes 52 mA from 2.7 V power supply voltage. The die size is 3 mm 3 mm.

A 20 GHz-band GaAs MMIC receiver module has been developed using 0.15 µm HEMT technology process. It incorporates two front end low noise amplifiers, a double balanced diode mixer, and filters. The RF input frequency ranges 20.1 to 21 GHz and the IF output 1.1 to 2 GHz. Test results show an overall conversion gain of more than 27 dB, and less than a 2.2 dB noise figure. The image-rejection ratio greater than 21 dB has been obtained. The isolation between RF and IF ports is better than 27 dB, and between LO and IF is more than 50 dB.