In this letter, we propose a sample and hold circuit (S/H circuit) with the clock boost technique and the input signal tracking technique. The proposed circuit block generates the clock with the amplitude of VDD + vin, and the clock is used to control the MOS switch. By applying this circuit to a S/H circuit, we can deal with the rail-to-rail signal with maintaining low distortion. Furthermore, the hold error caused by the charge injection and the clock feedthrough can be also reduced by using the dummy switch. The Star-HSPICE simulation results are reported in this letter.

A 2V/120 ns flash EEPROM embedded in a microcontroller has been fabricated in 0.8 µm double-metal CMOS process technology with a simple stacked gate memory cell. To achieve low voltage and high speed operation, novel circuit technology and architecture; (a) PMOS-precharging NMOS-self-boost word line circuit with a higher voltage selector, (b) new erase algorithm for reverse operation, (c) column gate boost circuit, (d) hard-verify mode for replacing weak cells, (e) efficient redundancy of row and column lines, have been developed. A 512 kb flash EEPROM core chip incorporating these circuit techniques and architecture operate at 1.8 V and accesses data in 120 ns at 2 V and 70.