In this paper, we aim to develop technologies for the circuit fault diagnosis and propose a formulation of a measure of a test pattern for the circuit fault diagnosis. Given a faulty circuit, the fault diagnosis is to deduce locations of faults that had occurred in the circuit. The fault diagnosis is executed in software before the failure analysis by which engineers inspect physical defects, and helps to improve the manufacturing process which yielded faulty circuits. The heart of the fault diagnosis is to distinguish between candidate faults by using test patterns, which are applied to the circuit-under-diagnosis (CUD), and thus test patterns that can distinguish as many faults as possible need to be generated. This fact motivates us to consider the test pattern measure based on the number of fault-pairs that become distinguished by a test pattern. To the best of the authors' knowledge, that measure requires the computational time of complexity order O(NF2), where NF denotes the number of candidate faults. Since NF is generally large for real industrial circuits, the computational time of the measure is long even when a high-performance computer is used. The formulation proposed in this paper makes it possible to calculate the measure in the computational complexity of O(NF log NF), and thus that measure is useful for the test pattern selection in the fault diagnosis. In computational experiments, the effectiveness of the formulation is demonstrated as samples of computational times of the measure calculated by the traditional and the proposed formulae and thorough comparisons between several greedy heuristics which are based on the measure.

We propose a new large-scale logic test element group (TEG), called a flip-flop RAM (FF-RAM), to improve the total process quality before and during initial mass production. It is designed to be as convenient as an SRAM for measurement and to imitate a logic LSI. We implemented a 10 Mgates FF-RAM using our 65-nm CMOS process. The FF-RAM enables us to make fail-bit maps (FBM) of logic cells because of its cell array structure as an SRAM. An FF-RAM has an additional structure to detect the open and short failure of upper metal layers. The test results show that it can detect failure locations and layers effortlessly using FBMs. We measured and analyzed it for both the cell arrays and the upper metal layers. Their results provided many important clues to improve our processes. We also measured the neutron-induced soft error rate (SER) of FF-RAM, which is becoming a serious problem as transistors become smaller. We compared the results of the neutron-induced soft error rate to those of previous generations: 180 nm, 130 nm, and 90 nm. Because of this TEG, we can considerably shorten the development period for advanced CMOS technology.