We propose a new large-scale logic test element group (TEG), called a flip-flop RAM (FF-RAM), to improve the total process quality before and during initial mass production. It is designed to be as convenient as an SRAM for measurement and to imitate a logic LSI. We implemented a 10 Mgates FF-RAM using our 65-nm CMOS process. The FF-RAM enables us to make fail-bit maps (FBM) of logic cells because of its cell array structure as an SRAM. An FF-RAM has an additional structure to detect the open and short failure of upper metal layers. The test results show that it can detect failure locations and layers effortlessly using FBMs. We measured and analyzed it for both the cell arrays and the upper metal layers. Their results provided many important clues to improve our processes. We also measured the neutron-induced soft error rate (SER) of FF-RAM, which is becoming a serious problem as transistors become smaller. We compared the results of the neutron-induced soft error rate to those of previous generations: 180 nm, 130 nm, and 90 nm. Because of this TEG, we can considerably shorten the development period for advanced CMOS technology.

In this paper, we describe a post-processing technique having high extraction efficiency (ExE) for de-biasing and de-correlating a random bitstream generated by true random number generators (TRNGs). This research is based on the N-bit von Neumann (VN_N) post-processing method. It improves the ExE of the original von Neumann method close to the Shannon entropy bound by a large N value. However, as the N value increases, the mapping table complexity increases exponentially (2N), which makes VN_N unsuitable for low-power TRNGs. To overcome this problem, at the algorithm level, we propose a waiting strategy to achieve high ExE with a small N value. At the architectural level, a Hamming weight mapping-based hierarchical structure is used to reconstruct the large mapping table using smaller tables. The hierarchical structure also decreases the correlation factor in the raw bitstream. To develop a technique with high ExE and low cost, we designed and fabricated an 8-bit von Neumann with waiting strategy (VN_8W) in a 130-nm CMOS. The maximum ExE of VN_8W is 62.21%, which is 2.49 times larger than the ExE of the original von Neumann. NIST SP 800-22 randomness test results proved the de-biasing and de-correlation abilities of VN_8W. As compared with the state-of-the-art optimized 7-element iterated von Neumann, VN_8W achieved more than 20% energy reduction with higher ExE. At 0.45V and 1MHz, VN_8W achieved the minimum energy of 0.18pJ/bit, which was suitable for sub-pJ low energy TRNGs.

Extremely low voltage operation near or below threshold voltage is a key circuit technology to improve the energy efficiency of information systems and to realize ultra-low power sensor nodes. However, it is difficult to operate conventional analog circuits based on amplifier at low voltage. Furthermore, PVT (Process, Voltage and Temperature) variation and random Vth variation degrade the minimum operation voltage and the energy efficiency in both digital and analog circuits. In this paper, extremely low power analog circuits based on comparator and switched capacitor as well as extremely low power digital circuits are presented. Many kinds of circuit technologies are applied to cope with the variation problem. Finally, image processing SoC that integrates digital and analog circuits is presented, where improvement of total performance by a cooperation of analog circuits and digital circuits is demonstrated.

A CMOS bandgap reference circuit without resistors, which can successfully operate under 1V supply voltage is proposed. The improvement is realized by the technique of the voltage divider and a new current source. The most attractive merit is that the proposed circuit breaks the bottleneck of low supply voltage design caused by the constant bandgap voltage value (1.25V). Moreover, the temperature coefficient of the reference voltage Vref is improved by compensating the temperature dependence caused by the current source. The simulation results using a standard CMOS 0.18 um process show that the value of Vref can be achieved around 0.5 V with a minimum supply voltage of 0.85 V. Meanwhile, the temperature coefficient of the output voltage is only 3.5ppm/°C from 0 °C to 70 °C.

This paper introduces an inverter-based true random number generator (I-TRNG). It uses a single CMOS inverter to amplify thermal noise multiple times. An adaptive calibration mechanism based on clock tuning provides robust operation across a wide range of supply voltage 0.5∼1.1V and temperature -40∼140°C. An 8-bit Von-Neumann post-processing circuit (VN8W) is implemented for maximum raw entropy extraction. In a 130nm CMOS technology, the I-TRNG entropy source only occupies 635μm2 and consumes 0.016pJ/raw-bit at 0.6V. The I-TRNG occupies 13406μm2, including the entropy source, adaptive calibration circuit, and post-processing circuit. The minimum energy consumption of the I-TRNG is 1.38pJ/bit at 0.5V, while passing all NIST 800-22 and 800-90B tests. Moreover, an equivalent 15-year life at 0.7V, 25°C is confirmed by an accelerated NBTI aging test.

Small loop gain and low crossover frequency result in poor dynamic performance of a single-loop output voltage controlled boost converter in continuous conduction mode. Multi-loop current control can improve the dynamic performance, however, the cost, size and weight of the circuit will also be increased. Sensorless multi-loop control solves the problems, however, the difficulty of the closed-loop characteristics evaluation will be severely aggravated, because there are more parameters in the loops, meanwhile, different from the single-loop, the relationships between the loop gains and closed-loop characteristics including audio susceptibility and output impedance are generally indirect for the multi-loop. Therefore, in this paper, a novel robust H∞ synthesis approach in the time-domain is proposed to design a sensorless controller for boost converters, which need not solve any algebraic Riccati equation or linear matrix inequalities, and most importantly, provides an approach to parameterizing the controller by an adjustable parameter. The adjustable parameter behaves like a ‘knob’ on the dynamic performance, consequently, which makes the closed-loop characteristics evaluation straightforward. A boost converter is used to verify the proposed synthesis approach. Simulations show the great convenience of the closed-loop characteristics evaluation. Practical experiments confirm the simulations.

This paper describes the design of a high-speed 4-2 compressor for fast multipliers. Through the survey of the six kinds of representative conventional 4-2 compressor (RBA 1-3 and NBA 1-3) in both the redundant binary (RB) and the normal binary (NB) scheme, we extracted two problems that degrades the operating speed. The first is the use of multi-input complex gates and the second is the existence of transmission gates (TG) at the input and/or output stages. To solve these problems, we propose high-speed 4-2 compressors using the RB scheme, which we call the high-speed redundant binary adders (HSRBAs). Six kinds of HSRBAs, HSRBA 1-6, were derived by making the Boolean equations suitable for high-speed CMOS circuits. Among them, HSRBA2, HSRBA4 and HSRBA6 have no multi-input complex gate and input/output TG, and perform at a delay time of 0.89 ns which is the fastest of all 4-2 compressors. We investigated the logical relation between HSRBAs and conventional 4-2 compressors by analyzing the Boolean equations for each circuit. This investigation shows that all the conventional redundant binary adders RBA1-3 have the same logic structures as HSRBA2. We also showed the conventional normal binary adders NBA1-3 have the same logic structures as HSRBA1, HSRBA3 and HSRBA5, respectively. This implies all 4-2 compressors can be derived from the same equation regardless of RB or NB. We applied the HSRBA2 to a 5454-bit multiplier using 0.5-µm CMOS technology. The multiplication time at the supply voltage of 3.3 V was 8.8 ns. This is the fastest 5454-bit multiplier with 0.5-µm CMOS so far, and 83% of the speed improvement is due to the high speed 4-2 compressor.

In this paper, a nanopower supply-insensitive complementary metal-oxide-semiconductor (CMOS) unit threshold voltage (Vth) extractor circuit is proposed. It meets the contemporary industry demand for portable devices that operate with very low power consumption and small output sensitivity. An α times Vth (αVth) extractor is also described, in which α varies continuously. Both incremental and decremental αVth voltages are obtained. A post-layout simulation results using HSPICE with CMOS 0.18um process show that the proposed unit Vth extractor consumes 265nW of power given a 1.6V power supply. Sensitivity to temperature is 0.022%/°C ranging from 0°C to 100°C. Sensitivity to supply voltage is 0.027%/V.

An analytical model of the static noise margin (SNM) for a 6T CMOS SRAM suitable for use in investigating the effect of random Vth variation is derived. A three-step approach using characteristic points of the half cell inverter's transfer curve is developed. Parameters of each transistor are handled individually so that their sensitivities are calculable. A new MOSFET model in the moderate inversion is proposed to maintain accuracy, even in the low VDD condition. Correlation between the proposed model calculations and circuit simulations was verified using a 90 nm CMOS LSTP device. Closely correlated dependency on parameters such as Vth, the W ratio, and VDD were obtained. Maximum error measured in the VDD range of 0.6-1.6 V was 16 mV (7% of typical SNM). Finally, guidelines to obtain large SNM are discussed in this paper.