The impedance expansion method (IEM), which was previously proposed by the authors, is a circuit-modeling technique for electrically-very-small devices. The equivalent circuits derived by the IEM include dependent voltage sources proportional to the powers of the frequency. However, the previous report did not describe how circuit simulators could realize such dependent voltage sources. This paper shows how this can be achieved by approximating the equivalent circuit using only passive elements.

This paper proposes a circuit modeling technique for electrically-very-small devices, e.g. electrodes for intrabody communications, coils for wireless power transfer systems, high-frequency transformers, etc. The proposed technique is based on the method of moments and can be regarded as an improved version of the partial element equivalent circuit method.

A fast calculation tool for state-dependent capacitance of power distribution network is proposed. The proposed method achieves linear time-complexity, which can be more than four orders magnitude faster than a conventional SPICE-based capacitance calculation. Large circuits that have been unanalyzable with the conventional method become analyzable for more comprehensive exploration of capacitance variation. The capacitance obtained with the proposed method agrees SPICE-based method completely (up to 5 digits), and time-linearity is confirmed through numerical experiments on various circuits. The maximum and minimum capacitances are also calculated using average and variance estimation. Calculation times are linear time-complexity, too. The proposed tool facilitates to build an accurate macro model of an LSI.

In this paper, active frequency selective surfaces (FSS) having a squared aperture with a metal plate loading are described. Active FSS elements using switched PIN diodes are discussed with an equivalent circuit model. A unit cell consists of a square aperture element with metal island loading and one PIN diode placed at the upper gap, considering the vertical polarization. The electromagnetic properties of the active FSS structure are changed by applying dc bias to the substrate, and they can be estimated by the equivalent circuit model of the FSS structure and PIN diode. This active FSS design enables transmission to be switched on or off at 2.3 GHz, providing high transmission when the diodes are in an off state and high isolation when the diodes are on. The equivalent circuit model in the structure is investigated by analyzing transmission and reflection spectra. Measurements on active FSS are compared with numerical calculations. The experimentally observed frequency responses are also scrutinized.

Substrate-coupling equivalent circuits can be derived for arbitrary isolation structures by F-matrix computation. The derived netlist represents a unified impedance network among multiple sites on a chip surface as well as internal nodes of isolation structures and can be applied with SPICE simulation to evaluate isolation strengths. Geometry dependency of isolation attributes to layout parameters such as area, width, and location distance. On the other hand, structural dependency arises from vertical impurity concentration specific to p+/n+ diffusion and deep n-well. Simulation-based prototyping of isolation structures can include all these dependences and strongly helps establish an isolation strategy against high-frequency substrate coupling in a given technology. The analysis of isolation strength provided by p+/n+ guard ring, deep n-well guard ring as well as deep n-well pocket well explains S21 measurements performed on high-frequency test structures targeting 5 GHz bandwidth, that was formed in a 0.25-µm CMOS high frequency.

A new analytical approach which reveals relationships between resonator parameters (unloaded Q-factor, coupling coefficient, and loaded Q-factor) and phase noise in microwave negative-resistance oscillators is presented. On the basis of Kurokawa's theory, this approach derives analytical expressions for the phase noise as a function of the resonator parameters (with particular emphasis on the coupling coefficient). Two types of negative-resistance oscillators--classified according to the manner in which the resonator is used in a circuit--are analyzed. These analyses use realistic circuit configurations and design procedures. The passive network connecting the active device and the resonator, which is shown to have important effects on the above-mentioned relationship, is taken into account. Validity of the new approach is verified through harmonic-balance simulations. The presented analytical approach can provide useful guidelines for choosing the resonator parameters, especially the value of the coupling coefficient, when designing microwave negative-resistance oscillators.