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[Keyword] compatibility(47hit)

41-47hit(47hit)

  • An Improvement in the Standard Site Method for Accurate EMI Antenna Calibration

    Akira SUGIURA  Takao MORIKAWA  Kunimasa KOIKE  Katsushige HARIMA  

     
    PAPER-Electromagnetic Compatibility

      Vol:
    E78-B No:8
      Page(s):
    1229-1237

    Standard Site Method (SSM) is theoretically analyzed using matrix representations to examine its validity and develop an improved method. The analysis reveals that the SSM yields an antenna factor specifically related to the effective load impedance presented by the cable and associated devices which are disconnected from the antenna during the SSM site attenuation measurements. Therefore, an additional conversion is required to determine the desired antenna factor under actual load conditions. It is also concluded that the SSM is not applicable to antennas having height-dependent antenna factors. In addition, the SSM correction factors are found to be theoretically inappropriate. Uncertainty of the antenna factor obtained using the SSM is discussed and the required antenna separation distance is investigated. To improve the existing SSM, it is proposed that both transmitting and receiving antennas are placed at the same height during the site attenuation measurements. Experiments exhibit the superiority of the improved method.

  • High-Speed High-Density Self-Aligned PNP Technology for Low-Power Complementary Bipolar ULSIs

    Katsuyoshi WASHIO  Hiromi SHIMAMOTO  Tohru NAKAMURA  

     
    PAPER-Device Technology

      Vol:
    E78-C No:4
      Page(s):
    353-359

    A high-speed high-density self-aligned pnp technology for complementary bipolar ULSIs has been developed to achieve high-speed and low-power performance simultaneously. It is fully compatible with the npn process. A low sheet-resistance p+ buried layer and a low sheet-resistance extrinsic n+ polysilicon layer with U-grooved isolation enable the transistor size to be scaled down to about 20 µm2. Current gain of 85 with 4-V collector-emitter breakdown voltage was obtained without any leakage current arising from emitter-base forward tunneling or recombination, which indicates no extrinsic base encroachment problem. A shallow emitter junction depth of 45 nm and narrow base width of 30 nm, obtained by utilizing an optimized retrograded p-well, an arsenic-implanted intrinsic base, and emitter diffusion from BF2-implanted polysilicon, improve the maximum cutoff frequency to 35 GHz. The power dissipation of the pnp pull-down complementary emitter-follower ECL circuit with load capacitances is calculated to be reduced to 20-40% of a conventional ECL circuit.

  • Electromagnetic Shielding Effectiveness: Effects Due to Gap Size and Angle of Cut

    Behzad D. MOTTAHED  Souran MANOOCHEHRI  

     
    PAPER

      Vol:
    E78-B No:2
      Page(s):
    207-211

    Effects of various joint configurations and gap sizes on the electromagnetic shielding effectiveness (SE) are evaluated to provide guidelines for best design of joints in order to increase the value of SE. Four different joint geometries are presented. A sharp decrease on SE with larger gap size for simple joints is observed. Addition of bends in the joint geometry has strong positive effect on the value of the SE. Increasing the angle of cut, which increases the effective length of the joint were also demonstrated to have increasing effect on the shielding performance.

  • Measurements on Low Frequency Phase and Amplitude Fluctuations and Its Application to Reduce the Noise in Bipolar Transistor Circuits

    Keiji TAKAGI  

     
    LETTER

      Vol:
    E78-B No:2
      Page(s):
    279-280

    A system for measuring the low frequency amplitude and phase noises was set-up, with employing a phase sensitive detector and phase-shifter. It is noted that both noises were partly correlated. The phase noise was explained by the transit time fluctuation due to the fluctuating diffusion coefficient. The amplitude noise reduction was demonstrated by applying the inverted output of the phase noise to the amplitude noise.

  • Evaluation of Antenna Factor of Biconical Antennas for EMC Measurements

    Koichi GYODA  Yukio YAMANAKA  Takashi SHINOZUKA  Akira SUGIURA  

     
    PAPER

      Vol:
    E78-B No:2
      Page(s):
    268-272

    Broadband antennas such as biconical antennas and log-periodic dipole antennas are generally used in automatic EMC measurements. However, these broadband antennas have not been used for accurate measurement because accurate specifications for them are lacking. Therefore, more accurate analysis is urgently required by the CISPR (International Special Committee on Radio Interference), to establish the specifications for broadband antennas for EMC measurements. In this paper, the AF of biconical antennas is calculated by using Moment Methods. The frequency characteristics and antenna height dependency of AF are presented. AF is also measured and compared to the data obtained by the calculations. Good agreement between the calculations and measurements is achieved, indicating the usefulness of our computation method. In addition, the effect of antenna separation distance and transmitting antenna height on AF is investigated. The calculated AF deviation from the reference value is nearly 0dB except for certain antenna arrangements. In these antenna arrangements, the field becomes null at the receiving antenna and widely varies in magnitude and phase around the null points. Therefore, the antenna is immersed in a non-uniform field, while the AF is defined on the assumption of a uniform field. Consequently, the erroneous AF will be derived from measurements around these null points and it will be greatly different from that obtained at other antenna heights. Thus, it is better to avoid these conditions during actual measurements. The effect of the ground plane on AF is also evaluated. AF is shown to be seriously affected by the ground plane especially at frequencies around 90MHz. It should be noted that AF deviation has crests corresponding to the null field at 300MHz. The obtained data will be useful in establishing specifications of biconical antennas for EMC measurements.

  • A Cryogenic HEMT Pseudorandom Number Generator

    Yoshimi ASADA  Yasuhiro NAKASHA  Norio HIDAKA  Takashi MIMURA  Masayuki ABE  

     
    PAPER

      Vol:
    E75-C No:10
      Page(s):
    1133-1139

    We developed a 32-bit pseudorandom number generator (RNG) operating at liquid nitrogen temperature based on HEMT ICs. It generates maximum-length-sequence codes whose primitive polynomial is X47+X42+1 with the period of 247-1 clock cycle. We designed and fabricated three kinds of cryogenic HEMT IC for this system: A 1306-gate controller IC, a 3319-gate pseudorandom number generator (RNG) IC, and a buffer IC containing a 4-kb RAM and 514 gates. We used 0.6-µm gate-length Se-doped GaAlAs/GaAs HEMTs. Interconnects were Al for the first layer and Au/Pt/Ti for the second layer with a SiON insulator between them. The HEMT ICs have direct-coupled FET logic (DCFL) gates internally and emitter-coupled logic (ECL) compatible input-putput buffers. The unloaded basic delay of the DCFL gate was 17 ps/gate with a power consumption of 1.4 mW/gate at liquid nitrogen temperature. We used an automatic cryogenic wafer probe we developed and an IC tester for function tests, and used a high-speed performance measuring system we also developed with a bandwidth of more than 20 GHz for high-speed performance tests. Power dissipations were 3.8 W for the controller IC, 4.5 W for the RNG IC, and 3.0 W for the buffer IC. The RNG IC, the largest of the three HEMT ICs, had a maximum operating clock rate of 1.6 GHz at liquid nitrogen temperature. We submerged a specially developed zirconium ceramic printed circuit board carrying the HEMT ICs in a closed-cycle cooling system. The HEMT ICs were flip-chip-packaged on the board with bumps containing indium as the principal component. We confirmed that the RNG system operates at liquid nitrogen temperature and measured a minimum system clock period of 1.49 ns.

  • Anechoic Chambers for EMI Test

    Yasutaka SHIMIZU  

     
    INVITED PAPER

      Vol:
    E75-B No:3
      Page(s):
    101-106

    Anechoic chambers have been effectively used for microwave propagation, electromagnetic interference (EMI) and immunity testing. The electromagnetic compatibility (EMC) problem has recently become serious and many of these chambers have been constructed. The results of a questionnaire survey sent to anechoic chamber manufacturers are described that a total of 450 anechoic chambers have been constructed in Japan since 1964. Twenty years ago the purpose of the chambers was microwave propagation research, but more than 50 each year have recently being built for EMC/EMI and immunity testing. Their size has gradually been reduced by the use of absorbing materials such as ferrite with dielectric materials. The lowest frequency of most chambers is 30MHz for the 3 m method of site attenuation.

41-47hit(47hit)