The resistor variation can severely affect current reference sources, which may vary up to ±40% in scaled CMOS processes. In addition, such variations make the opamp design challenging and increase the design margin, impacting power consumption. This paper proposes a Time-Based Current Source (TBCS): a robust and process-scalable reference current source suitable for switched-capacitor (SC) circuits. We construct a delay-locked-loop (DLL) to lock the current-starved inverter with the reference clock, enabling the use of the settled current directly as a reference current. Since the load capacitors determine the delay, the generated current is decoupled from resistor values and enables a robust reference current source. The prototype TBCS fabricated in 28nm CMOS achieved a minimal area of 1200um2. The current variation is suppressed to half compared to BGR based current sources, confirmed in extensive PVT variation simulations. Moreover, when used as the opamp's bias, TBCS achieves comparable opamp GBW to an ideal current source.

This paper presents a resistor-compensation technique for a CMOS bandgap and current reference, which utilizes various high positive temperature coefficient (TC) resistors, a two-stage operational transconductance amplifier (OTA) and a simplified start-up circuit in the 0.35-µm CMOS process. In the proposed bandgap and current reference, numerous compensated resistors, which have a high positive temperature coefficient (TC), are added to the parasitic n-p-n and p-n-p bipolar junction transistor devices, to generate a temperature-independent voltage reference and current reference. The measurements verify a current reference of 735.6 nA, the voltage reference of 888.1 mV, and the power consumption of 91.28 µW at a supply voltage of 3.3 V. The voltage TC is 49 ppm/ in the temperature range from 0 to 100 and 12.8 ppm/ from 30 to 100. The current TC is 119.2 ppm/ at temperatures of 0 to 100. Measurement results also demonstrate a stable voltage reference at high temperature (> 30), and a constant current reference at low temperature (< 70).

A voltage-controlled oscillator (VCO) tolerant to process variations at lower supply voltage was proposed. The circuit consists of an on-chip threshold-voltage-monitoring circuit, a current-source circuit, a body- biasing control circuit, and the delay cells of the VCO. Because variations in low-voltage VCO frequency are mainly determined by that of the current in delay cells, a current-compensation technique was adopted by using an on-chip threshold-voltage-monitoring circuit and body-biasing circuit techniques. Monte Carlo SPICE simulations demonstrated that variations in the oscillation frequency by using the proposed techniques were able to be suppressed about 65% at a 1-V supply voltage, compared to frequencies with and without the techniques.

In this work, a CMOS on-chip current reference circuit for memory, operational amplifiers, comparators, and data converters is proposed. The reference current is nearly insensitive to temperature and supply-voltage variations. In the proposed circuit, the current component with a positive temperature coefficient cancels that with a negative temperature coefficient each other. While conventional current reference circuits are based on bipolar transistors in BiCMOS, bipolar, or CMOS processes, the proposed circuit can be integrated on a single chip with other digital and analog circuits using a standard CMOS process and extra masks are not required. Measured results are demonstrated for two different prototypes. The first is fabricated employing a 1.0 µm p-well double-poly double-metal CMOS process and operates at 5 V nominally. The second, based on a 0.6 µm n-well process, is optimized for 3 V to 5 V operation. The latter prototype achieves the temperature coefficient of 98 ppm/ over a temperature range from -25 to 75 and the output variation of 1.5% with the supply-voltage changes from 2.5 V to 5.5 V. A simple calibration technique for reducing output current variations improves circuit yield.

This paper describes a 10 bit CMOS current-mode A/D converter with a current predictor and a modular current reference circuit. A current predictor and a modular current reference circuit are employed to reduce the number of comparator and reference current mirrors and consequently to decrease a power dissipation. The 10 bit current-mode A/D converter is fabricated by the 0.6 µm n-well double poly/triple metal CMOS technology. The measurement results show the input current range of 16 µA to 528 µA, DNL and INL of 0.5 LSB and 1.0 LSB, conversion rate of 10 Msamples, and power dissipation of 94.4 mW with a power supply of 5 V. The effective chip area excluding the pads is 1.8 mm 2.4 mm.

A current controlled CMOS output driver was designed by using a temperature-insensitive reference current generator. It eliminates the need for overdesign of the driver transistor size to meet the delay specification at high temperature. Comparison with the conventional CMOS output driver with the same transistor size showed that the ground bounce noise was reduced by 2.5 times and the delay time was increased by 1.4 times, at 25 for 50pF load. The temperature variations of the DC pull-up and pull-down currents of the new output driver were 4% within the temperature range from -15 to 125 compared to the variations of 40 and 60% for pull-up and pull-down respectively for the conventional output driver. The temperature insensitivity of the reference current generator was achieved by multiplying two current components. one which is proportional to mobility and the other which is inversely proportional to mobility, by using a CMOS square root circuit. The temperature variation of the DC output current of the reference current generator alone was 0.77% within the entire temperature range from -15 to 125.