A novel one-transistor dynamic random access memory (1T DRAM) cell has been proposed for a low-voltage operation and longer data retention time. The proposed 1T DRAM cell has three features compared with a conventional 1T DRAM cell: low body doping concentration, a recessed gate structure, and a P + poly-Si gate. Simulation results show that the proposed 1T DRAM cell has < 1-ns program time and > 100-ms data retention time under the condition of sub-1-V operating voltage.

In merged DRAM/logic LSIs, the DRAM portion could suffer from shorter data retention time because of heat and noise caused by the logic portion. In order to reconsider the DRAM data retention characteristics, this paper formulates and evaluates the performance degradation due to conflicts between normal DRAM accesses and refresh operations. Next, this paper proposes a new DRAM refresh architecture which intends to reduce unnecessary refreshes. This architecture exploits multiple refresh periods. Each row is refreshed with the most appropriate period of them. Reducing the number of refreshes improves the accessibility to DRAM. It is shown that the method reduces the number of refreshes and the degree of the performance degradation of the logic portion.

The key circuit technologies for future giga-bit/low voltage operating high performance SOI-DRAM is described. Emphasis is made especially on the considerations for ways to overcome floating-body effects in order to obtain very long static/dynamic data retention time. A new scheme called a super body synchronous sensing scheme is proposed for low voltage operation at 1 V.

Stacked capacitor dynamic random access memory(DRAM) cells with both NMOS and PMOS cell transistors(Lg=0.4µm) were fabricated on ultra-thin SIMOX(separation by implantation of oxygen) substrates, and the data retention time was compared with that of a bulk counterpart. A DATA retention time of 550 sec(at 25 ) could be achieved using ultra-thin SIMOX substrates, which is 6 times longer than that using the bulk substrate. A stacked capacitor cell with a PMOS cell transistor on an ultra-thin SIMOX substrate is very attractive and promising for future giga-bit DRAM cells.