Diffusion of phosphorus impurities from a polycrystalline silicon films into a silicon substrate was investigated as a function of the mean concentration of phosphorus in a polycrystalline silicon film at the first diffusion stage. We presented that good control of the redistribution of implanted phosphorus impurities was possible by optimizing the normalized dose, which is the value: [the total dose of phosphorus impurities]/[the polycrystalline silicon film thickness], in the case of samples both with and without an arsenic doped layers. In the range where the normalized dose was less than 1.52.51020 cm-3, deeper junctions were formed in samples with an arsenic doped layer. In the range where the normalized dose was more than 1.52.51020 cm-3, however, deeper junctions were formed in samples without any arsenic doped layer rather than in samples with an arsenic doped layer. These results mean that formation of the junction in the device structure where a high concentration phosphorus doped polysilicon layer is stacked on to the high concentration arsenic layer embeded at the surface of the substrate can be restricted by optimizing the normalized dose. Moreover, a trade-off relationship between suppressing phosphorus diffusion and maintaining low contact resistance against normalized doses was also observed.

Recently most of the singularities of the equivalent edge currents for flat plates were eliminated by the authors using the paths of most rapid phase variation. A unique direction on the plate was determined for given incidence and observer. This paper extends this method for arbitrary angle wedges and presents the new expressions of the equivalent edge currents. The resultant expressions are valid for any incidence and observation aspects and have no false singularities. Diffraction patterns and radar cross sections of 3-D objects composed of wedges are calculated by using these currents. They show good agreements with experimental data or the results by the other methods.

This letter discusses the quality improvement of reconstructed images in diffraction tomography. An efficient iterative procedure based on the modified Newton-Kantorovich method and the Gerchberg-Papoulis algorithm is presented. The simulated results demonstrate the property of high-quality reconstruction even for cases where the first-order Born approximation fails.

The increase of surface microroughness on Si substrate degrades the electrical characteristics such as the dielectric breakdown field intensity (EBD) and charge to break-down (QBD) of thin oxide film. It has been found that the surface microroughness increases in the wet chemical process, particularly in NH4OH-H2O2-H2O cleaning (APM cleaning). It has been revealed that the surface microroughness does not increase at all if the NH4OH mixing ratio in NH4OH-H2O2-H2O solution is reduced from the conventional level of 1:1:5 to 0.05:1:5, and the room temperature ultrapure water rinsing is introduced right after the APM cleaning. At the same time, the APM cleaning with NH4OH-H2O2-H2O mixing ratio of 0.05:1:5 has been very effective to remove particles and metallic impurities from the Si surface. The surface microroughness dominating the electrical properties of very thin oxide films is strictly influenced by the wafer quality. The increase of surface microroughness due to the APM cleaning has varied among the wafer types such as Cz, FZ and epitaxial (EPI) wafers. The increase of surface microroughness in EPI wafer was very much limited, while the surface microroughness of FZ and Cz wafers gradually increase. As a result of investigating the amount of diffused phosphorus atoms into these wafers, the increase of the surface microroughness in APM cleaning has been confirmed to strongly depend on the silicon vacancy cluster concentration in wafer. The EPI wafer having low silicon vacancy concentration is essentially revealed superior for future sub-half-micron ULSI devices.

The encoding of high quality and super high definition images requires new approaches to the coding problem. The nature of such images and the applications in which they are used prohibits the introduction of perceptible degradation by the coding process. In this paper, we discuss techniques for the perceptually transparent coding of images. Although technically lossy methods, images encoded and reconstructed using these techniques appear identical to the original images. The reconstructed images can be postprocessed (e.g., enhanced via anisotropic filtering), due to the absence of structured errors, commonly introduced by conventional lossy methods. The compression, ratios obtained are substantially higher than those achieved using lossless means.

In recent years, ion implantation has become one of the key techniques in semiconductor fabrication. The annealing of the damage produced during implantation is, however, not fully understood. Ion implantation at high temperatures allows the time-resolved study of implantation-enhanced diffusion. During the process, point defects are generated by the ion implantation and consumed by recombination in the bulk as well as by diffusion to the surface and recombination there. With increasing temperatures, the recombination of point defects, which are acting as diffusion vehicles, results in reduced effective diffusion. Profiles processed above 900 show marked uphill diffusion at the surface caused by large gradients of the point defect concentrations. This uphill diffusion affirms the generally accepted pair diffusion theories. Since the point defects are in steady state even after process times which are short compared to the total process time, we are able to give a qualitative analysis of the dose dependence of the diffusion. By extensive numerical simulations, we could estimate the product of bulk recombination rate and equilibrium concentrations of self-interstitials and vacancies as well as the interface recombination velocity for the self-interstitials. The results obtained are in qualitative agreement with previous work of others. The results demonstrate, in fact, clearly the advantages of the method presented. But due to experimental problems concerning the temperature measurement, which have not been fully resolved up to now, the results have to be considered as crude estimates.