We have systematically studied the characteristics of Si doping in GaAs grown on (311)A GaAs substrates by molecular beam epitaxy. The growth temperature dependence of Si doping has been investigated. It is found that the conduction-type sharply changes from p-type to n-type with decreasing growth temperature at a critical temperature of 430-480. The highest hole density obtained for uniformly doped layers was 1.51020 cm-3, while for δ-doped layers the sheet hole density as high as 2.61013 cm-2 was achieved. This is the highest hole density ever reported for δ-doped GaAs.

We studied the selective epitaxy of GaAs grown by a technique called pulsed-jet epitaxy. Pulsed-jet epitaxy is a kind of atomic layer epitaxy (ALE) based on low-pressure metalorganic vapor-phase epitaxy (MOVPE). We compared growth behavior and layers grown by ALE and MOVPE. During ALE we supplied trimethylgallium (TMGa) and arsine (AsH3) alternately; however, during MOVPE we supplied TMGa and AsH3 simultaneously. At a growth temperature of 500, we obtained a better growth selectivity using ALE than using MOVPE. The lateral thickness profile of the ALE-grown GaAs layer at the edge of SiO2 mask was uniform. In contrast, the MOVPE growth rate was enhanced near the mask edge. Using ALE, we selectively grew GaAs epilayers even at mask openings with submicron widths. Scanning electron microscopy revealed that the ALE selectively grown structures had an uniform thickness profile, though the facets surrounding the structures depended on the orientation of mask stripes. After MOVPE, however, the (001) surface of the deposited layer was not flat because of the additional lateral diffusion of the growth species from the gas phase and/or the mask surface and some crystal facets. The experimental results show that, using ALE, we can control the shape of selectively grown structures. Selective epitaxy by ALE is a promising technique for fabricating low-dimensional quantum effect devices.

Selective epitaxial growth technology has been extended to the base formation of a transistor on the basis of the SATURN (Self-Alignment Technology Utilizing Reserved Nitride) process, a high-speed bipolar LSI processing technology. The formation of a self-aligned base contact, coupled with SIC (Selective Ion-implanted Collector) fabricated by lowenergy ion implantation, has not only narrowed the transistor active regions but has drastically reduced the base width. A final base width of 800 and a maximum cut-off frequency of 31 GHz were achieved.

Isotope dilution secondary ion mass spectroscopy (ID-SIMS) using 30Si as a spike is investigated as a quantitative analysis method for trace amounts of Si. For a standard solution of Si, the relateve standard deviation of results using this method is 5% for 0.2 µg Si, and the determination lower limit is 18 ng. Using this method, the amount of Si deposited on the Ge(100) surface by the self-limited adsorption of SiH2Cl2 is determined to be about 1.00.2 monolayer.

The a-Si films deposited on quartz substrates were crystallized by lateral sweep annealing in steep temperature gradient using a gas burner. Random nucleation in amorphous region was effectively suppressed in the temperature gradient, so lateral solid phase epitaxial growth from crystallites generated at the initial stage of lateral sweep annealing spread over 100 µm. Their crystallographic orientations were mostly (100).