This paper presents a novel CMOS readout circuit for satellite infrared time delay and integration (TDI) arrays. An integrate-while-read method is adopted, and a dead-pixel-elimination circuit for solving a critical problem of the TDI scheme is integrated within a chip. In addition, an adaptive charge capacity control method is proposed to improve the signal-to-noise ratio (SNR) for low-temperature targets. The readout circuit was fabricated with a 0.35-µm CMOS process for a 5004 mid-wavelength infrared (MWIR) HgCdTe detector array. Using the circuit, a 90% background-limited infrared photodetection (BLIP) is satisfied over a wide input range (∼200–330 K), and the SNR is improved by 11 dB for the target temperature of 200 K.

A readout circuit incorporating a pixel-level analog-to-digital converter (ADC) is studied for 2-dimensional microbolometer infrared focal plane arrays (IRFPAs). The integration time and signal-to-noise ratio (SNR) is improved using the current-mode bias and MSB skimming. The proposed pixel-level ADC is a two-step configuration, so its power consumption is very low. The readout circuit was designed using a 0.35 µm 2-poly 4-metal CMOS process for a 320240 microbolometer array with a pixel size of 35µm35µm. The noise equivalent temperature difference (NETD) was estimated to be 47 mK, with a power consumption of 390 nW for a pixel-level ADC.

We have analyzed the dominant noise sources in the driving circuit of an uncooled infrared radiation focal plane array fabricated on a silicon-on-insulator (SOI) substrate by 0.35 µm CMOS technology and bulk- micromachining. We found no noise property of SOI-MOSFET inferior compared to those of NMOSs formed on SOI and bulk substrate, respectively. In addition, we reduced the total noise of the sensor chip by designing the current source NMOS sufficiently large, and optimized the operating current of pixel pn-junctions.

For real time image processing, a readout circuit for an infrared focal plane array (IRFPA) involving a new edge detection technique has been proposed in this letter. A non-uniformity correction unit (NUC), essential in an IRFPA because of bad non-uniformity characteristics of IR sensors is eliminated in this circuit by using a noise tolerant edge detection technique. In addition, real time edge detection can be possible, because of pixel-level integration and parallel processing. The proposed readout circuit shows an approximately three to nine times better edge error rate than other available methods using pixel-level parallel processing.

Transferring the image information in analog form between the focal plane array (FPA) and the external electronics causes the disturbance of the outside noise. On-chip analog-to-digital (A/D) converter into the readout integrated circuit (ROIC) can eliminate the possibilities of the cross-talk of noise. Also, the information can be transported more efficiently in power in the digital domain compared to the analog domain. In designing on-chip A/D converter for cooled type high density infrared detector array, the most stringent requirements are power dissipation, number of bits, die area and throughput. In this study, pipelined type A/D converter was adopted because it has high operation speed characteristics with medium power consumption. Capacitor averaging technique and digital error correction for high resolution was used to eliminate the error which is brought out from the device mismatch. The readout circuit was fabricated using 0.6 µm CMOS process for 128 128 mid-wavelength infrared (MWIR) HgCdTe detector array. Fabricated circuit used direct injection type for input stage, and then S/N ratio could be maximized with increasing the integration capacitor. The measured performance of the 14 b A/D converter exhibited 0.2 LSB differential non-linearity (DNL) and 4 LSB integral non-linearity (INL). A/D converter had a 1 MHz operation speed with 75 mW power dissipation at 5 V. It took the die area of 5.6 mm2. It showed the good performance that can apply for cooled type high density infrared detector array.

A readout circuit involving new two step current mode background suppression is studied for 2-dimensional long wavelength infrared focal plane arrays (LWIR FPA's). Buffered direct injection (BDI) and feedback amplifier structure are adopted for input circuit and background suppression circuit, respectively. The pixel circuit is simple and has very small skimming error less than 0.1%. Enough calibration range over 50% as well as long integration time over 1.75 ms can be obtained using this readout circuit.