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[Keyword] interconnect model(4hit)

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  • Perturbation Approach for Order Selections of Two-Sided Oblique Projection-Based Interconnect Reductions

    Chia-Chi CHU  Ming-Hong LAI  Wu-Shiung FENG  

     
    LETTER

      Vol:
    E88-A No:12
      Page(s):
    3573-3576

    An order selection scheme for two-sided oblique projection-based interconnect reduction will be investigated. It will provide a guideline for terminating the conventional nonsymmetric Pade via Lanczos (PVL) iteration process. By exploring the relationship of the system Grammians of the original network and those of the reduced network, it can be shown that the system matrix of the reduced-order system generated by the two-sided oblique projection can also be expressed as those of the original interconnect model with some additive perturbations. The perturbation matrix only involves bi-orthogonal vectors at the previous step of the nonsymmetric Lanczos algorithm. This perturbation matrix will provide the stopping criteria in the order selection scheme and achieve the desired accuracy of the approximate transfer function.

  • A New Three-Piece Driver Model with RLC Interconnect Load

    Lakshmi K. VAKATI  Kishore K. MUCHHERLA  Janet M. WANG  

     
    PAPER-VLSI Design Technology and CAD

      Vol:
    E88-A No:8
      Page(s):
    2206-2215

    The scaled down feature size and the increased frequency of today's deep sub-micron region call for fundamental changes in driver-load models. To be more specific, new driver-load models need to take into consideration the nonlinear behavior of the drivers, the inductance effects of the loads, and the slew rates of the output waveforms. Current driver-load models use the conventional single Ceff (one-ramp) approach and treat the interconnect load as lumped RC networks. Neither the nonlinear property nor the inductance effects were considered. The accuracy of these existing models is therefore questionable. This paper introduces a new multi-ramp driver model that represents the interconnect load as a distributed RLC network. The employed two effective capacitance values capture the nonlinear behavior of the driver. The lossy transmission line approach accounts for the impact of inductance when modeling the driving point interconnect load. The new model shows improvements of 9% in the average delay error and 2.2% in the slew rate error compared to SPICE.

  • Addressing a High-Speed D/A Converter Design for Mixed-Mode VLSI Systems

    Kwang-Hyun BAEK  

     
    PAPER-Electronic Circuits

      Vol:
    E88-C No:5
      Page(s):
    1053-1060

    This paper describes a high-speed D/A converter design for mixed-mode systems. Capacitive coupling induced by inter-chip interconnects and time-variant clock skew between ICs should be considered for mixed-mode systems, and on-chip interconnects should be treated as transmission lines in the circuit simulation as operating speed reaches GHz range. A robust FIFO built in the D/A converter can absorb input data timing variance due to the capacitive coupling and the clock timing skew, the worst-case margin of which is 1.5TCLK. Distributed RLC transmission line models for on-chip interconnects produce accurate simulation results at 1 GHz clock frequency over lumped models. For optimized D/A converter design, behavioral modeling methodology is also presented in this paper. Measurement results verify the accuracy of the on-chip interconnect and behavioral models.

  • Interconnect Modeling in Deep-Submicron Design

    Won-Young JUNG  Soo-Young OH  Jeong-Taek KONG  Keun-Ho LEE  

     
    INVITED PAPER-Circuit Applications

      Vol:
    E83-C No:8
      Page(s):
    1311-1316

    As scaling has been continued more than 20 years, it has yielded faster and denser chips with ever increasing functionality. The scaling will continue down to or beyond 0.1 µm as proposed in SIA Technical Road map. With scaling, device performance improves, however, interconnect performance is degraded. In this scaled deep submicron technology, however, interconnects limit the performance, packing density and yield, if not properly modeled. In order to properly model and design the interconnect-dominated circuits, accurate and proper interconnect modeling is a must to assure the performance and functionality of ever-increasing complex multi-million transistor VLSI circuits. In this paper, the overall flow of interconnect modeling in IC design is reviewed including interconnect characterization, various 2-D/3-D field solvers, 2-D/3-D interconnect model library generation, and parameter extraction. And advanced topics of interconnect modeling in deep submicron are reviewed; statistical interconnect modeling.