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Takahide SATO Shigetaka TAKAGI Nobuo FUJII
An equivalent MOSFET circuit with a wide input range is proposed. The proposed circuit is suitable for a realization of a wide input range under a low power supply voltage. The circuit consists of a MOSFET array and level shift circuits. The sum of drain currents of the MOSFET array is used as an equivalent drain current. The equivalent drain current is represented by K(VGS-VT)2 even when its drain-to-source voltage is quite small and some MOSFETs in the array are in the non-saturation region or the cut-off region. The input range of the proposed circuit realized by k-MOSFET array is k times as wide as that of a single MOSFET. It is confirmed through HSPICE simulations that the proposed circuit is effective in applications with a wide dynamic range.
Hayato FUJII Akira HYOGO Keitaro SEKINE
We propose a novel mobility reduction cancellation technique for an OTA (Operational Transconductance Amplifier). The proposed technique can be easily realized by using conventional OTAs. The proposed OTAs have good linearity. The simulation results show that the THD is less than 1% for 1.8 Vp-p at 3 V supply voltage.
Tsutomu SUZUKI Takao OURA Teru YONEYAMA Hideki ASAI
A new four-quadrant (4Q) Multiplier complementally using linear and saturation regions of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is proposed for the wide dynamic range and superior flexibility of the input range. This multiplier operates in the region except for the threshold voltage VT to zero. The validity of the proposed circuit is confirmed through HSPICE simulation.