In this study, we investigated Si(100), Si(110) and Si(111) surface flattening process utilizing sacrificial oxidation method, and its effect on Metal-Insulator-Semiconductor (MIS) diode characteristics. By the etching of the 100 nm-thick sacrificial oxide formed by thermal oxidation at 1100°C, the surface roughness of Si(100), Si(110) and Si(111) substrates were reduced. The obtained Root-Mean-Square (RMS) roughness of Si(100) was reduced from 0.22 nm (as-cleaned) to 0.07 nm (after etching), while it was reduced from 0.23 nm to 0.12 nm in the case of Si(110), and from 0.23 nm to 0.11 nm in the case of Si(111), respectively. Furthermore, it was found that time-dependent dielectric breakdown (TDDB) characteristics of MIS diodes for p-Si(100), p-Si(110) and p-Si(111) were improved with the reduction of Si surface RMS roughness.

In this study, Si(100) surface flattening process was investigated utilizing sacrificial oxidation method to improve Metal--Insulator--Semiconductor (MIS) diode characteristics. By etching of the 100,nm-thick sacrificial oxide formed by thermal oxidation at 1100$^{circ}$C, the surface roughness of Si substrate was reduced. The obtained Root-Mean-Square (RMS) roughness was decreased from 0.15,nm (as-cleaned) to 0.07,nm in the case of sacrificial oxide formed by wet oxidation, while it was 0.10,nm in the case of dry oxidation. Furthermore, time-dependent dielectric breakdown (TDDB) characteristic of Al/SiO$_{2}$(10,nm)/p-Si(100) MIS diode structures was found to be improved by the reduction of Si surface RMS roughness.

To improve metal oxide semiconductor field effect transistors (MOSFET) performance, flat interface between gate insulator and silicon (Si) should be realized. In this paper, the influence of Si surface roughness on electrical characteristics of MOSFET with hafnium oxynitride (HfON) gate insulator formed by electron cyclotron resonance (ECR) plasma sputtering was investigated for the first time. The surface roughness of Si substrate was reduced by Ar/4.9%H2 annealing utilizing conventional rapid thermal annealing (RTA) system. The obtained root-mean-square (RMS) roughness was 0.07nm (without annealed: 0.18nm). The HfON was formed by 2nm-thick HfN deposition followed by the Ar/O2 plasma oxidation. The electrical properties of HfON gate insulator were improved by reducing Si surface roughness. It was found that the current drivability of fabricated nMOSFETs was remarkably increased by reducing Si surface roughness. Furthermore, the reduction of Si surface roughness also leads to decrease of the 1/f noise.

To improve metal oxide semiconductor field effect transistors (MOSFET) performance, flat interface between gate insulator and silicon should be realized. In this paper, flattening process of Si surface below 1000 utilizing Ar/4.9%H2 annealing and its effect on ultrathin HfON gate insulator formation were investigated. The Si(100) substrates were annealed using conventional rapid thermal annealing (RTA) system in Ar or Ar/4.9%H2 ambient for 1 h. The surface roughness of Ar/4.9%H2-annealed Si was small compared to that of Ar-annealed Si because the surface oxidation was suppressed. The obtained root mean square (RMS) roughness was 0.08 nm (as-cleaned: 0.20 nm) in case of Ar/4.9%H2-annealed at 1000 measured by tapping mode atomic force microscopy (AFM). The HfON surface was also able to be flattened by reduction of Si surface roughness. The electrical properties of HfON gate insulator were improved by the reduction of Si surface roughness. We obtained equivalent oxide thickness (EOT) of 0.79 nm (as-cleaned: 1.04 nm) and leakage current density of 3.510-3 A/cm2 (as-cleaned: 6.110 -1 A/cm2) by reducing the Si surface roughness.

We demonstrated the reduced surface roughness of poly (3-hexylthiophene) (P3HT):(6,6)-phenyl-C61-butyric acid methyl ester (PCBM) thin films with different ratios fabricated by the electrospray deposition (ESD) method. Aggregated structures were observed at the lower voltage, and the uniformity became bad at the higher voltage. Anyway, the minimum root mean square (RMS) roughness was 1.46 nm by optimizing the applied voltage.

In the urban area, buildings are the main scatterer which dominate the mobile propagation characteristics. However, reflection, diffraction, and scattering on the building surfaces in the radio environment induce undesirable multipath propagation. Multipath prediction with respect to a building surface has been conventionally based on an assumption that reflection from the surface has a substantial specular direction. However non-specular scattering from the building surface can affect the channel characteristics as well as specular scattering. This paper presents multipath characteristics of non-specular wave scattering from building surface roughness based on the experimental results. Superresolution method was applied as an approach to handle the signal parameters (DoA, ToA) of the individual incoming waves reflected from building surface roughness. The results show that the multipaths can be detected at many scatterers, such as ground, window's glass, window's frames and bricks surface, as well as directly from the transmitter. Most of the scattered waves are arriving closely from specular directions. The measured reflection coefficients were well bounded by reflection coefficients of the theoretically smooth and random rough surface. The Fresnel reflection coefficient formula, considering the finite thickness of the building surface and Gaussian scattering correction, give better prediction for glass and bricks reflection coefficient measurement.

Borehole radar is known as a powerful technique for monitoring of subsurface structures such as water flow. However, conventional borehole radar systems are operated in the frequency range lower than 100 MHz and the resolution is poor to measure a surface roughness and an inner structure of subsurface fractures directly. In order to monitor the water flow, these characteristics of subsurface fractures are important. We developed a polarimetric borehole radar system using dipole antennas and axial slot antennas and have found that this system can provide more information than conventional borehole radar. However, the relationship between the characteristic of subsurface fracture and the measured polarimetric radar information has not been clear. In this paper, we simulate electromagnetic wave scattering from subsurface fractures having a rough surface by Finite-Difference Time-Domain (FDTD) technique and discuss the relationship between a surface roughness of subsurface fracture and the polarimetric information. It is found that the subsurface fracture having strong cross-polarized components can be estimated to be rough surface fracture. The full polarimetric single-hole radar measurement was carried out at the Mirror Lake site, NH, USA. In this experiment, we found that subsurface fractures can be classified into some groups by an energy scattering matrix, and found that the subsurface fracture estimated to have a rough surface corresponds to that has higher water permeability.

This paper describes an individual effect of soil moisture (mg) and surface roughness (hrms) of bare soil on the back scattering coefficient (σ0) at the X-band frequency. The study contributes to the design of an efficient microwave sensor. For this purpose, experimentally observed data was utilized to provide a composite σ0 equation model accounting for individual effect in regression analysis. The experimental data are compared with Small Perturbation Method. It is observed that the X-band gives better agreement up to incidence angle 50 for HH-polarization and 60 for VV-polarization as compared to the C-band. The lower angles of incidence give better results than the higher angles for observing mg at the X-band. The multiple and partial regression analyses have also carried out for predicting the dependence of scattering coefficient (σ0) on mg and hrms more accurately. The analyses suggest that the dependence of dielectric constant (i.e., mg) is much more significant in comparison to surface roughness at lower angles of incidence for both like polarizations. The results propose the suitable angle of incidence for observing bare surface roughness and soil moisture at the X-band. All these data can be used as a reference for satellite or spaceborne sensors.

A novel technique has been developed for in situ sensing of thin film growth. In this method, a fiber optic probe is placed at an appropriate position in a deposition chamber, and the thin film builds up on the end of the fiber. This film is either the same as on the wafer where deposition occurs, or it bears a fixed relationship to the film on the wafer. By an analysis of the intensity of the light reflected from the film and guided by the fiber, information on the film may be obtained. With interference causing maxima, minima and a point of inflection as the film grows, it is possible to obtain near real time information on the following quantities: the real and imaginary parts of the refractive index of the film, a Gaussian parameter characterizing surface roughness, and the film thickness itself. To demonstrate this technique, we have studied the deposition of silicon nitride films in a CVD reactor and how reactor temperature and reactant flow rates influence film growth. This technique may be applied to measure in situ reflectivity of multi layer films, so that reflectance as a function of temperature and time may be obtained. Because the measurement is simple and direct and the information is optical, we believe that this technique has the potential to supplant quartz oscillators in the measurement of thin film growth.

Attenuated total reflection (ATR) properties and scattered light properties were measured for Ag thin films and arachidic acid (C20) Langmuir-Blodgett (LB) ultrathin films on the Ag thin films to obtain the information about their complex dielectric constants and surface roughness utilizing an excited surface plasmon polariton. The complex dielectric constants for the Ag thin films and the C20 LB films were obtained by fitting the calculated ATR curves to the experimental ones. The surface roughnesses of these films were estimated by the angular distribution of the scattered light assuming the Gaussian function as an autocorrelation function and a linear superposition of roughness spectra. The angular spectra strongly depended on the roughness parameters: the transverse correlation length σ and the surface corrugation depth δ. The experimental angular distributions were explained by some pairs of σ and δ. It was suggested that the surface roughness of the C20 LB films changed with the number of monolayers since the angular spectra varied with the number of the C20 LB monolayers on the Ag films. It is thought that the measurement of the scattered light is useful to evaluate surface roughnesses of LB ultrathin films.

The showering arc waveforms generated when contact is being separate have poor reproducibility whose causes are not sufficiently clear. This paper describes that the contact surface conditions which change with the number of contact operations are deeply related to the showering arc waveforms. First, it is experimentally shown that the contacts' surface roughness increases with the number of contact operations, and the growth model of contact surface roughness is proposed based on the change of contact resistance for the number of contact operations. Second, the growth model of molten metal bridge is proposed based on the fact that the showering arc waveforms change with the number of contact operations and the evaluation indexes of showering arc are proposed.

The direct measurement of sidewall roughness on a ridge-type GaAs waveguide was performed using an atomic force microscope (AFM) combined with a scanning electron microscope (SEM). The ridge sidewall of a GaAs waveguide formed by wet-etching and the ridge sidewall formed after regrowth of a 2.45-µm GaAs/AlGaAs epitaxial layer on the same waveguide were observed using introducing the technique for sample slanting. The observed power spectral density was used to determine the scattering loss caused by the sidewall roughness. It was found that the ridge-type GaAs waveguide for light wave transmission had a scattering loss of 0.029 dB/cm in the as-etched ridge state and a scattering loss of 0.17 dB/cm after regrowing the cover GaAs/AlGaAs epitaxial layer. A leaky GaAs/AlGaAs waveguide for polariton-quantum-wave trans-mission had a scattering loss of 1.3l0-5 dB/cm, which means that the scattering loss is negligible. Furthermore, it was found that a periodical surface fluctuation (spatial frequency 2.2 µm-1) along the waveguide appeared after the regrowth of the epitaxial layer. Thus, this method is useful for direct observation of sidewall roughness and can be used to quantitatively determine the sidewall scattering loss.