The search functionality is under construction.
The search functionality is under construction.

Keyword Search Result

[Keyword] through-silicon via(2hit)

1-2hit
  • Crosstalk Analysis and Countermeasures of High-Bandwidth 3D-Stacked Memory Using Multi-Hop Inductive Coupling Interface Open Access

    Kota SHIBA  Atsutake KOSUGE  Mototsugu HAMADA  Tadahiro KURODA  

     
    BRIEF PAPER

      Pubricized:
    2022/09/30
      Vol:
    E106-C No:7
      Page(s):
    391-394

    This paper describes an in-depth analysis of crosstalk in a high-bandwidth 3D-stacked memory using a multi-hop inductive coupling interface and proposes two countermeasures. This work analyzes the crosstalk among seven stacked chips using a 3D electromagnetic (EM) simulator. The detailed analysis reveals two main crosstalk sources: concentric coils and adjacent coils. To suppress these crosstalks, this paper proposes two corresponding countermeasures: shorted coils and 8-shaped coils. The combination of these coils improves area efficiency by a factor of 4 in simulation. The proposed methods enable an area-efficient inductive coupling interface for high-bandwidth stacked memory.

  • A Design for Testability of Open Defects at Interconnects in 3D Stacked ICs

    Fara ASHIKIN  Masaki HASHIZUME  Hiroyuki YOTSUYANAGI  Shyue-Kung LU  Zvi ROTH  

     
    PAPER-Dependable Computing

      Pubricized:
    2018/05/09
      Vol:
    E101-D No:8
      Page(s):
    2053-2063

    A design-for-testability method and an electrical interconnect test method are proposed to detect open defects occurring at interconnects among dies and input/output pins in 3D stacked ICs. As part of the design method, an nMOS and a diode are added to each input interconnect. The test method is based on measuring the quiescent current that is made to flow through an interconnect to be tested. The testability is examined both by SPICE simulation and by experimentation. The test method enabled the detection of open defects occurring at the newly designed interconnects of dies at experiments test speed of 1MHz. The simulation results reveal that an open defect generating additional delay of 279psec is detectable by the test method at a test speed of 200MHz beside of open defects that generate no logical errors.