IEICE TRANSACTIONS on Electronics
1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation
Summary :
A systematic experimental and modeling study is reported, which characterizes the low-frequency noise spectrum of 100 nm-MOSFETs accurately. Two kinds of measured spectra are observed: 1/f and non-1/f spectra. The non-1/f spectrum is analysed by forward and backward measurements with exchanged source and drain, and shown to be due to a randomly distributed inhomogeneity of the trap density along the channel and within the gate oxide. By averaging the spectra of identical MOSFETs on a wafer the measured non-1/f noise spectra reduce to a 1/f characteristics. On the basis of these measurement data a noise model for circuit simulation is developed, which reproduces the low-frequency noise spectrum with a single model parameter for all gate lengths and under any bias conditions.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E88-C No.2 pp.247-254
- Publication Date
- 2005/02/01
- Publicized
- Online ISSN
- DOI
- 10.1093/ietele/e88-c.2.247
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
Authors
Shizunori MATSUMOTO
Hiroaki UENO
Satoshi HOSOKAWA
Toshihiko KITAMURA
Mitiko MIURA-MATTAUSCH
Hans Jurgen MATTAUSCH
Tatsuya OHGURO
Shigetaka KUMASHIRO
Tetsuya YAMAGUCHI
Kyoji YAMASHITA
Noriaki NAKAYAMA
Keyword
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Shizunori MATSUMOTO, Hiroaki UENO, Satoshi HOSOKAWA, Toshihiko KITAMURA, Mitiko MIURA-MATTAUSCH, Hans Jurgen MATTAUSCH, Tatsuya OHGURO, Shigetaka KUMASHIRO, Tetsuya YAMAGUCHI, Kyoji YAMASHITA, Noriaki NAKAYAMA, "1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation" in IEICE TRANSACTIONS on Electronics,
vol. E88-C, no. 2, pp. 247-254, February 2005, doi: 10.1093/ietele/e88-c.2.247.
Abstract: A systematic experimental and modeling study is reported, which characterizes the low-frequency noise spectrum of 100 nm-MOSFETs accurately. Two kinds of measured spectra are observed: 1/f and non-1/f spectra. The non-1/f spectrum is analysed by forward and backward measurements with exchanged source and drain, and shown to be due to a randomly distributed inhomogeneity of the trap density along the channel and within the gate oxide. By averaging the spectra of identical MOSFETs on a wafer the measured non-1/f noise spectra reduce to a 1/f characteristics. On the basis of these measurement data a noise model for circuit simulation is developed, which reproduces the low-frequency noise spectrum with a single model parameter for all gate lengths and under any bias conditions.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e88-c.2.247/_p
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@ARTICLE{e88-c_2_247,
author={Shizunori MATSUMOTO, Hiroaki UENO, Satoshi HOSOKAWA, Toshihiko KITAMURA, Mitiko MIURA-MATTAUSCH, Hans Jurgen MATTAUSCH, Tatsuya OHGURO, Shigetaka KUMASHIRO, Tetsuya YAMAGUCHI, Kyoji YAMASHITA, Noriaki NAKAYAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation},
year={2005},
volume={E88-C},
number={2},
pages={247-254},
abstract={A systematic experimental and modeling study is reported, which characterizes the low-frequency noise spectrum of 100 nm-MOSFETs accurately. Two kinds of measured spectra are observed: 1/f and non-1/f spectra. The non-1/f spectrum is analysed by forward and backward measurements with exchanged source and drain, and shown to be due to a randomly distributed inhomogeneity of the trap density along the channel and within the gate oxide. By averaging the spectra of identical MOSFETs on a wafer the measured non-1/f noise spectra reduce to a 1/f characteristics. On the basis of these measurement data a noise model for circuit simulation is developed, which reproduces the low-frequency noise spectrum with a single model parameter for all gate lengths and under any bias conditions.},
keywords={},
doi={10.1093/ietele/e88-c.2.247},
ISSN={},
month={February},}
Copy
TY - JOUR
TI - 1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation
T2 - IEICE TRANSACTIONS on Electronics
SP - 247
EP - 254
AU - Shizunori MATSUMOTO
AU - Hiroaki UENO
AU - Satoshi HOSOKAWA
AU - Toshihiko KITAMURA
AU - Mitiko MIURA-MATTAUSCH
AU - Hans Jurgen MATTAUSCH
AU - Tatsuya OHGURO
AU - Shigetaka KUMASHIRO
AU - Tetsuya YAMAGUCHI
AU - Kyoji YAMASHITA
AU - Noriaki NAKAYAMA
PY - 2005
DO - 10.1093/ietele/e88-c.2.247
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E88-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2005
AB - A systematic experimental and modeling study is reported, which characterizes the low-frequency noise spectrum of 100 nm-MOSFETs accurately. Two kinds of measured spectra are observed: 1/f and non-1/f spectra. The non-1/f spectrum is analysed by forward and backward measurements with exchanged source and drain, and shown to be due to a randomly distributed inhomogeneity of the trap density along the channel and within the gate oxide. By averaging the spectra of identical MOSFETs on a wafer the measured non-1/f noise spectra reduce to a 1/f characteristics. On the basis of these measurement data a noise model for circuit simulation is developed, which reproduces the low-frequency noise spectrum with a single model parameter for all gate lengths and under any bias conditions.
ER -
English
