Composite-Collector InGaP/GaAs HBTs for Linear Power Amplifiers

Takaki NIWA; Takashi ISHIGAKI; Naoto KUROSAWA; Hidenori SHIMAWAKI; Shinichi TANAKA

doi:10.1093/ietele/e88-c.4.672

Composite-Collector InGaP/GaAs HBTs for Linear Power Amplifiers

Takaki NIWA, Takashi ISHIGAKI, Naoto KUROSAWA, Hidenori SHIMAWAKI, Shinichi TANAKA

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The linear operation of a HBT with a GaAs/InGaP composite collector structure is demonstrated. The composite collector structure allows for a thin collector design that is suitable for the linear operation of a HBT without critical degradation of the breakdown voltage. The load pull measurements under a 1.95 GHz WCDMA signal have shown that a composite-collector HBT with a 400-nm thick collector layer operates with power-added-efficiency (PAE) as high as 53% at V_CE = 3.5 V as a result of improved distortion characteristics. Despite the thin collector design, collector-emitter breakdown voltage of 11 V was achieved even at current density of 10 kA/cm². The composite-collector HBT has even greater advantage for future low voltage (< 3 V) applications where maintaining PAE and linearity becomes one of the critical issues.

Publication: IEICE TRANSACTIONS on Electronics Vol.E88-C No.4 pp.672-677

Publication Date: 2005/04/01

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DOI: 10.1093/ietele/e88-c.4.672

Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)

Category: Compound Semiconductor Devices

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Takaki NIWA, Takashi ISHIGAKI, Naoto KUROSAWA, Hidenori SHIMAWAKI, Shinichi TANAKA, "Composite-Collector InGaP/GaAs HBTs for Linear Power Amplifiers" in IEICE TRANSACTIONS on Electronics, vol. E88-C, no. 4, pp. 672-677, April 2005, doi: 10.1093/ietele/e88-c.4.672.
Abstract: The linear operation of a HBT with a GaAs/InGaP composite collector structure is demonstrated. The composite collector structure allows for a thin collector design that is suitable for the linear operation of a HBT without critical degradation of the breakdown voltage. The load pull measurements under a 1.95 GHz WCDMA signal have shown that a composite-collector HBT with a 400-nm thick collector layer operates with power-added-efficiency (PAE) as high as 53% at V_CE = 3.5 V as a result of improved distortion characteristics. Despite the thin collector design, collector-emitter breakdown voltage of 11 V was achieved even at current density of 10 kA/cm². The composite-collector HBT has even greater advantage for future low voltage (< 3 V) applications where maintaining PAE and linearity becomes one of the critical issues.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e88-c.4.672/_p

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@ARTICLE{e88-c_4_672,
author={Takaki NIWA, Takashi ISHIGAKI, Naoto KUROSAWA, Hidenori SHIMAWAKI, Shinichi TANAKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Composite-Collector InGaP/GaAs HBTs for Linear Power Amplifiers},
year={2005},
volume={E88-C},
number={4},
pages={672-677},
abstract={The linear operation of a HBT with a GaAs/InGaP composite collector structure is demonstrated. The composite collector structure allows for a thin collector design that is suitable for the linear operation of a HBT without critical degradation of the breakdown voltage. The load pull measurements under a 1.95 GHz WCDMA signal have shown that a composite-collector HBT with a 400-nm thick collector layer operates with power-added-efficiency (PAE) as high as 53% at V_CE = 3.5 V as a result of improved distortion characteristics. Despite the thin collector design, collector-emitter breakdown voltage of 11 V was achieved even at current density of 10 kA/cm². The composite-collector HBT has even greater advantage for future low voltage (< 3 V) applications where maintaining PAE and linearity becomes one of the critical issues.},
keywords={},
doi={10.1093/ietele/e88-c.4.672},
ISSN={},
month={April},}

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TY - JOUR
TI - Composite-Collector InGaP/GaAs HBTs for Linear Power Amplifiers
T2 - IEICE TRANSACTIONS on Electronics
SP - 672
EP - 677
AU - Takaki NIWA
AU - Takashi ISHIGAKI
AU - Naoto KUROSAWA
AU - Hidenori SHIMAWAKI
AU - Shinichi TANAKA
PY - 2005
DO - 10.1093/ietele/e88-c.4.672
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E88-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2005
AB - The linear operation of a HBT with a GaAs/InGaP composite collector structure is demonstrated. The composite collector structure allows for a thin collector design that is suitable for the linear operation of a HBT without critical degradation of the breakdown voltage. The load pull measurements under a 1.95 GHz WCDMA signal have shown that a composite-collector HBT with a 400-nm thick collector layer operates with power-added-efficiency (PAE) as high as 53% at V_CE = 3.5 V as a result of improved distortion characteristics. Despite the thin collector design, collector-emitter breakdown voltage of 11 V was achieved even at current density of 10 kA/cm². The composite-collector HBT has even greater advantage for future low voltage (< 3 V) applications where maintaining PAE and linearity becomes one of the critical issues.
ER -