IEICE TRANSACTIONS on Electronics
Three-Dimensional Dynamics of Heavy-Ion Induced CMOS Latchup
Summary :
This paper presents the dynamics of heavy-ion induced latchup turn-on behavior in CMOS structures using a three-dimensional and transient device simulation. The three-dimensional effects of parasitic devices in a CMOS structure during latchup turn-on are discussed in detail when a heavy-ion strikes the CMOS structure. For different incident types, the dynamics of latchup turn-on behaviors are also simulated. Moreover, latchup immunities of the CMOS structure obtained by two- and three-dimensional calculations are compared for the different incident types. This result suggests that the rough relation between latchup immunity and heavy-ion incident energy can be estimated using a two-dimensional simulation.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E75-C No.10 pp.1281-1290
- Publication Date
- 1992/10/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
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Hideyuki IWATA, Mitsuo YASUHIRA, Shinji ODANAKA, Takashi OHZONE, "Three-Dimensional Dynamics of Heavy-Ion Induced CMOS Latchup" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 10, pp. 1281-1290, October 1992, doi: .
Abstract: This paper presents the dynamics of heavy-ion induced latchup turn-on behavior in CMOS structures using a three-dimensional and transient device simulation. The three-dimensional effects of parasitic devices in a CMOS structure during latchup turn-on are discussed in detail when a heavy-ion strikes the CMOS structure. For different incident types, the dynamics of latchup turn-on behaviors are also simulated. Moreover, latchup immunities of the CMOS structure obtained by two- and three-dimensional calculations are compared for the different incident types. This result suggests that the rough relation between latchup immunity and heavy-ion incident energy can be estimated using a two-dimensional simulation.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_10_1281/_p
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@ARTICLE{e75-c_10_1281,
author={Hideyuki IWATA, Mitsuo YASUHIRA, Shinji ODANAKA, Takashi OHZONE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Three-Dimensional Dynamics of Heavy-Ion Induced CMOS Latchup},
year={1992},
volume={E75-C},
number={10},
pages={1281-1290},
abstract={This paper presents the dynamics of heavy-ion induced latchup turn-on behavior in CMOS structures using a three-dimensional and transient device simulation. The three-dimensional effects of parasitic devices in a CMOS structure during latchup turn-on are discussed in detail when a heavy-ion strikes the CMOS structure. For different incident types, the dynamics of latchup turn-on behaviors are also simulated. Moreover, latchup immunities of the CMOS structure obtained by two- and three-dimensional calculations are compared for the different incident types. This result suggests that the rough relation between latchup immunity and heavy-ion incident energy can be estimated using a two-dimensional simulation.},
keywords={},
doi={},
ISSN={},
month={October},}
Copy
TY - JOUR
TI - Three-Dimensional Dynamics of Heavy-Ion Induced CMOS Latchup
T2 - IEICE TRANSACTIONS on Electronics
SP - 1281
EP - 1290
AU - Hideyuki IWATA
AU - Mitsuo YASUHIRA
AU - Shinji ODANAKA
AU - Takashi OHZONE
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 1992
AB - This paper presents the dynamics of heavy-ion induced latchup turn-on behavior in CMOS structures using a three-dimensional and transient device simulation. The three-dimensional effects of parasitic devices in a CMOS structure during latchup turn-on are discussed in detail when a heavy-ion strikes the CMOS structure. For different incident types, the dynamics of latchup turn-on behaviors are also simulated. Moreover, latchup immunities of the CMOS structure obtained by two- and three-dimensional calculations are compared for the different incident types. This result suggests that the rough relation between latchup immunity and heavy-ion incident energy can be estimated using a two-dimensional simulation.
ER -
English
