A CMOS Time-to-Digital Converter LSI with Half-Nanosecond Resolution Using a Ring Gate Delay Line

Takamoto WATANABE; Yasuaki MAKINO; Yoshinori OHTSUKA; Shigeyuki AKITA; Tadashi HATTORI

A CMOS Time-to-Digital Converter LSI with Half-Nanosecond Resolution Using a Ring Gate Delay Line

Takamoto WATANABE, Yasuaki MAKINO, Yoshinori OHTSUKA, Shigeyuki AKITA, Tadashi HATTORI

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The development of highly accurate and durable control system is becoming a must for todays high performance automobiles. For example, it is necessary to up-grade todays materials and methods creating more sensitive sensors, higher speed processors and more accurate actuators, while also being more durable. Thus, the development of a CMOS time-to-digital converter LSI with half-nanosecond resolution, which controls only pulse signals was achieved by employing 1.5 µm CMOS technology. The new signal detecting circuit, 1.1 mm² in size, converts time to numerical values over a wide measurement range (13 bits). The compact digital circuit employs a newly developed "ring gate delay system". Within the LSI the fully digital circuit is highly durable. This allows it to be utilized even under severe conditions (for example an operating ambient temperature of 130). In order to measure time accurately, a method of correcting the variation of measurement time data employing a real-time conversion fully digital circuit is described. This method allows for fully automatic correction with a microcomputer, so no manual adjustment is required. In addition to sensor circuit applications, the LSI has great potential for Application Specific Integrated Circuit, (ASIC) such as a function cell with is a completely new method of measuring time.

Publication: IEICE TRANSACTIONS on Electronics Vol.E76-C No.12 pp.1774-1779

Publication Date: 1993/12/25

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Type of Manuscript: Special Section PAPER (Special Issue on ASICs for Automotive Electronics)

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Takamoto WATANABE, Yasuaki MAKINO, Yoshinori OHTSUKA, Shigeyuki AKITA, Tadashi HATTORI, "A CMOS Time-to-Digital Converter LSI with Half-Nanosecond Resolution Using a Ring Gate Delay Line" in IEICE TRANSACTIONS on Electronics, vol. E76-C, no. 12, pp. 1774-1779, December 1993, doi: .
Abstract: The development of highly accurate and durable control system is becoming a must for todays high performance automobiles. For example, it is necessary to up-grade todays materials and methods creating more sensitive sensors, higher speed processors and more accurate actuators, while also being more durable. Thus, the development of a CMOS time-to-digital converter LSI with half-nanosecond resolution, which controls only pulse signals was achieved by employing 1.5 µm CMOS technology. The new signal detecting circuit, 1.1 mm² in size, converts time to numerical values over a wide measurement range (13 bits). The compact digital circuit employs a newly developed "ring gate delay system". Within the LSI the fully digital circuit is highly durable. This allows it to be utilized even under severe conditions (for example an operating ambient temperature of 130). In order to measure time accurately, a method of correcting the variation of measurement time data employing a real-time conversion fully digital circuit is described. This method allows for fully automatic correction with a microcomputer, so no manual adjustment is required. In addition to sensor circuit applications, the LSI has great potential for Application Specific Integrated Circuit, (ASIC) such as a function cell with is a completely new method of measuring time.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_12_1774/_p

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@ARTICLE{e76-c_12_1774,
author={Takamoto WATANABE, Yasuaki MAKINO, Yoshinori OHTSUKA, Shigeyuki AKITA, Tadashi HATTORI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A CMOS Time-to-Digital Converter LSI with Half-Nanosecond Resolution Using a Ring Gate Delay Line},
year={1993},
volume={E76-C},
number={12},
pages={1774-1779},
abstract={The development of highly accurate and durable control system is becoming a must for todays high performance automobiles. For example, it is necessary to up-grade todays materials and methods creating more sensitive sensors, higher speed processors and more accurate actuators, while also being more durable. Thus, the development of a CMOS time-to-digital converter LSI with half-nanosecond resolution, which controls only pulse signals was achieved by employing 1.5 µm CMOS technology. The new signal detecting circuit, 1.1 mm² in size, converts time to numerical values over a wide measurement range (13 bits). The compact digital circuit employs a newly developed "ring gate delay system". Within the LSI the fully digital circuit is highly durable. This allows it to be utilized even under severe conditions (for example an operating ambient temperature of 130). In order to measure time accurately, a method of correcting the variation of measurement time data employing a real-time conversion fully digital circuit is described. This method allows for fully automatic correction with a microcomputer, so no manual adjustment is required. In addition to sensor circuit applications, the LSI has great potential for Application Specific Integrated Circuit, (ASIC) such as a function cell with is a completely new method of measuring time.},
keywords={},
doi={},
ISSN={},
month={December},}

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TY - JOUR
TI - A CMOS Time-to-Digital Converter LSI with Half-Nanosecond Resolution Using a Ring Gate Delay Line
T2 - IEICE TRANSACTIONS on Electronics
SP - 1774
EP - 1779
AU - Takamoto WATANABE
AU - Yasuaki MAKINO
AU - Yoshinori OHTSUKA
AU - Shigeyuki AKITA
AU - Tadashi HATTORI
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 1993
AB - The development of highly accurate and durable control system is becoming a must for todays high performance automobiles. For example, it is necessary to up-grade todays materials and methods creating more sensitive sensors, higher speed processors and more accurate actuators, while also being more durable. Thus, the development of a CMOS time-to-digital converter LSI with half-nanosecond resolution, which controls only pulse signals was achieved by employing 1.5 µm CMOS technology. The new signal detecting circuit, 1.1 mm² in size, converts time to numerical values over a wide measurement range (13 bits). The compact digital circuit employs a newly developed "ring gate delay system". Within the LSI the fully digital circuit is highly durable. This allows it to be utilized even under severe conditions (for example an operating ambient temperature of 130). In order to measure time accurately, a method of correcting the variation of measurement time data employing a real-time conversion fully digital circuit is described. This method allows for fully automatic correction with a microcomputer, so no manual adjustment is required. In addition to sensor circuit applications, the LSI has great potential for Application Specific Integrated Circuit, (ASIC) such as a function cell with is a completely new method of measuring time.
ER -