A New Technique for Evaluating Gate Oxide Reliability Using a Photon Emission Method
Summary :
A new technique for evaluating gate oxide reliability using photon emission method has been developed. This method enables the measurements of the initial breakdown characteristics, reliability testing and failure analysis consistently. From the experimental results, followings are clarified for the first time using this technique. Failure modes in the initial characteristics have close correlation to TDDB characteristics and both characteristics correspond to the location of breakdown spot. The results suggest measures to improve the reliability of gate oxide and the existance of new failure mechanism.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E76-C No.4 pp.519-524
- Publication Date
- 1993/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Category
- Device Technology
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Keyword
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Yukiharu URAOKA, Kazuhiko TSUJI, "A New Technique for Evaluating Gate Oxide Reliability Using a Photon Emission Method" in IEICE TRANSACTIONS on Electronics,
vol. E76-C, no. 4, pp. 519-524, April 1993, doi: .
Abstract: A new technique for evaluating gate oxide reliability using photon emission method has been developed. This method enables the measurements of the initial breakdown characteristics, reliability testing and failure analysis consistently. From the experimental results, followings are clarified for the first time using this technique. Failure modes in the initial characteristics have close correlation to TDDB characteristics and both characteristics correspond to the location of breakdown spot. The results suggest measures to improve the reliability of gate oxide and the existance of new failure mechanism.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_4_519/_p
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@ARTICLE{e76-c_4_519,
author={Yukiharu URAOKA, Kazuhiko TSUJI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A New Technique for Evaluating Gate Oxide Reliability Using a Photon Emission Method},
year={1993},
volume={E76-C},
number={4},
pages={519-524},
abstract={A new technique for evaluating gate oxide reliability using photon emission method has been developed. This method enables the measurements of the initial breakdown characteristics, reliability testing and failure analysis consistently. From the experimental results, followings are clarified for the first time using this technique. Failure modes in the initial characteristics have close correlation to TDDB characteristics and both characteristics correspond to the location of breakdown spot. The results suggest measures to improve the reliability of gate oxide and the existance of new failure mechanism.},
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - A New Technique for Evaluating Gate Oxide Reliability Using a Photon Emission Method
T2 - IEICE TRANSACTIONS on Electronics
SP - 519
EP - 524
AU - Yukiharu URAOKA
AU - Kazuhiko TSUJI
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1993
AB - A new technique for evaluating gate oxide reliability using photon emission method has been developed. This method enables the measurements of the initial breakdown characteristics, reliability testing and failure analysis consistently. From the experimental results, followings are clarified for the first time using this technique. Failure modes in the initial characteristics have close correlation to TDDB characteristics and both characteristics correspond to the location of breakdown spot. The results suggest measures to improve the reliability of gate oxide and the existance of new failure mechanism.
ER -
English
