IEICE TRANSACTIONS on Electronics
Observation Techinique for Process-Induced Defects Using Anodic Oxidation
Summary :
A new observation technique for process-induced micro-defects in ULSI using a combination of anodic oxidation and chemical removal of the oxide has been developed. Enhanced oxidation has occurred at the defect region due to the stress field and then craterlike delineation has been formed after oxide removal. AFM and SEM observation of the micro-defects induced by ion implantation and applications using this tech-nique to the failure analysis of MOS device fabrication are presented.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E79-C No.3 pp.324-327
- Publication Date
- 1996/03/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Scientific ULSI Manufacturing Technology)
- Category
- Particle/Defect Control and Analysis
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Keyword
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Morio INOUE, Shinji FUJII, "Observation Techinique for Process-Induced Defects Using Anodic Oxidation" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 3, pp. 324-327, March 1996, doi: .
Abstract: A new observation technique for process-induced micro-defects in ULSI using a combination of anodic oxidation and chemical removal of the oxide has been developed. Enhanced oxidation has occurred at the defect region due to the stress field and then craterlike delineation has been formed after oxide removal. AFM and SEM observation of the micro-defects induced by ion implantation and applications using this tech-nique to the failure analysis of MOS device fabrication are presented.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_3_324/_p
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@ARTICLE{e79-c_3_324,
author={Morio INOUE, Shinji FUJII, },
journal={IEICE TRANSACTIONS on Electronics},
title={Observation Techinique for Process-Induced Defects Using Anodic Oxidation},
year={1996},
volume={E79-C},
number={3},
pages={324-327},
abstract={A new observation technique for process-induced micro-defects in ULSI using a combination of anodic oxidation and chemical removal of the oxide has been developed. Enhanced oxidation has occurred at the defect region due to the stress field and then craterlike delineation has been formed after oxide removal. AFM and SEM observation of the micro-defects induced by ion implantation and applications using this tech-nique to the failure analysis of MOS device fabrication are presented.},
keywords={},
doi={},
ISSN={},
month={March},}
Copy
TY - JOUR
TI - Observation Techinique for Process-Induced Defects Using Anodic Oxidation
T2 - IEICE TRANSACTIONS on Electronics
SP - 324
EP - 327
AU - Morio INOUE
AU - Shinji FUJII
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1996
AB - A new observation technique for process-induced micro-defects in ULSI using a combination of anodic oxidation and chemical removal of the oxide has been developed. Enhanced oxidation has occurred at the defect region due to the stress field and then craterlike delineation has been formed after oxide removal. AFM and SEM observation of the micro-defects induced by ion implantation and applications using this tech-nique to the failure analysis of MOS device fabrication are presented.
ER -
English
