A 100 W S-Band AlGaAs/GaAs Heterostructure FET for Base Stations of Wireless Personal Communications

Seiki GOTO; Kenichi FUJII; Tetsuo KUNII; Satoshi SUZUKI; Hiroshi KAWATA; Shinichi MIYAKUNI; Naohito YOSHIDA; Susumu SAKAMOTO; Takashi FUJIOKA; Noriyuki TANINO; Kazunao SATO

A 100 W S-Band AlGaAs/GaAs Heterostructure FET for Base Stations of Wireless Personal Communications

Seiki GOTO, Kenichi FUJII, Tetsuo KUNII, Satoshi SUZUKI, Hiroshi KAWATA, Shinichi MIYAKUNI, Naohito YOSHIDA, Susumu SAKAMOTO, Takashi FUJIOKA, Noriyuki TANINO, Kazunao SATO

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A 100 W, low distortion AlGaAs/GaAs heterostructure FET has been developed for CDMA cellular base stations. This FET employs the longest gate finger ever reported of 800 µm to shrink the chip size. The size of the chip and the package are miniaturized to 1.242.6 mm² and 17.4 24.0 mm², respectively. The developed FET exhibits 100 W (50 dBm) saturation output power, and 11.5 dB power gain at 1 dB gain compression at 2.1 GHz. The third-order intermodulation distortion and the power-added efficiency under the two-tone test condition (Δf=1 MHz) are -35 dBc and 24%, respectively at 42 dBm output power, that is 8 dB back off from the saturation power.

Publication: IEICE TRANSACTIONS on Electronics Vol.E82-C No.11 pp.1936-1942

Publication Date: 1999/11/25

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Type of Manuscript: Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)

Category: RF Power Devices

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Seiki GOTO, Kenichi FUJII, Tetsuo KUNII, Satoshi SUZUKI, Hiroshi KAWATA, Shinichi MIYAKUNI, Naohito YOSHIDA, Susumu SAKAMOTO, Takashi FUJIOKA, Noriyuki TANINO, Kazunao SATO, "A 100 W S-Band AlGaAs/GaAs Heterostructure FET for Base Stations of Wireless Personal Communications" in IEICE TRANSACTIONS on Electronics, vol. E82-C, no. 11, pp. 1936-1942, November 1999, doi: .
Abstract: A 100 W, low distortion AlGaAs/GaAs heterostructure FET has been developed for CDMA cellular base stations. This FET employs the longest gate finger ever reported of 800 µm to shrink the chip size. The size of the chip and the package are miniaturized to 1.242.6 mm² and 17.4 24.0 mm², respectively. The developed FET exhibits 100 W (50 dBm) saturation output power, and 11.5 dB power gain at 1 dB gain compression at 2.1 GHz. The third-order intermodulation distortion and the power-added efficiency under the two-tone test condition (Δf=1 MHz) are -35 dBc and 24%, respectively at 42 dBm output power, that is 8 dB back off from the saturation power.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_11_1936/_p

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@ARTICLE{e82-c_11_1936,
author={Seiki GOTO, Kenichi FUJII, Tetsuo KUNII, Satoshi SUZUKI, Hiroshi KAWATA, Shinichi MIYAKUNI, Naohito YOSHIDA, Susumu SAKAMOTO, Takashi FUJIOKA, Noriyuki TANINO, Kazunao SATO, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 100 W S-Band AlGaAs/GaAs Heterostructure FET for Base Stations of Wireless Personal Communications},
year={1999},
volume={E82-C},
number={11},
pages={1936-1942},
abstract={A 100 W, low distortion AlGaAs/GaAs heterostructure FET has been developed for CDMA cellular base stations. This FET employs the longest gate finger ever reported of 800 µm to shrink the chip size. The size of the chip and the package are miniaturized to 1.242.6 mm² and 17.4 24.0 mm², respectively. The developed FET exhibits 100 W (50 dBm) saturation output power, and 11.5 dB power gain at 1 dB gain compression at 2.1 GHz. The third-order intermodulation distortion and the power-added efficiency under the two-tone test condition (Δf=1 MHz) are -35 dBc and 24%, respectively at 42 dBm output power, that is 8 dB back off from the saturation power.},
keywords={},
doi={},
ISSN={},
month={November},}

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TY - JOUR
TI - A 100 W S-Band AlGaAs/GaAs Heterostructure FET for Base Stations of Wireless Personal Communications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1936
EP - 1942
AU - Seiki GOTO
AU - Kenichi FUJII
AU - Tetsuo KUNII
AU - Satoshi SUZUKI
AU - Hiroshi KAWATA
AU - Shinichi MIYAKUNI
AU - Naohito YOSHIDA
AU - Susumu SAKAMOTO
AU - Takashi FUJIOKA
AU - Noriyuki TANINO
AU - Kazunao SATO
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1999
AB - A 100 W, low distortion AlGaAs/GaAs heterostructure FET has been developed for CDMA cellular base stations. This FET employs the longest gate finger ever reported of 800 µm to shrink the chip size. The size of the chip and the package are miniaturized to 1.242.6 mm² and 17.4 24.0 mm², respectively. The developed FET exhibits 100 W (50 dBm) saturation output power, and 11.5 dB power gain at 1 dB gain compression at 2.1 GHz. The third-order intermodulation distortion and the power-added efficiency under the two-tone test condition (Δf=1 MHz) are -35 dBc and 24%, respectively at 42 dBm output power, that is 8 dB back off from the saturation power.
ER -