A Study on Hot-Carrier-Induced Photoemission in n-MOSFETs

Toshihiro MATSUDA; Naoko MATSUYAMA; Kiyomi HOSOI; Etsumasa KAMEDA; Takashi OHZONE

A Study on Hot-Carrier-Induced Photoemission in n-MOSFETs

Toshihiro MATSUDA, Naoko MATSUYAMA, Kiyomi HOSOI, Etsumasa KAMEDA, Takashi OHZONE

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Profiles of photoemission induced by hot electrons in LDD-type n-MOSFETs with L = 0.35-2.0 µm were measured with a photoemission microscope, which had a capability of 1000 magnification and a spatial resolution of 27 nm/pixel on a CCD imager sufficient to detect profile changes in the channel length direction. Under the bias condition of maximum substrate current, photoemission peaks were located at the LDD-drain edge and the n⁺-drain edge for the devices with L = 0.35 and L 0.40 µm, respectively. A peak position, only in the case of the 0.35 µm device, shifted toward the drain side by about 80 nm at V_D = 7.0 V. Since V_D did not affect peak positions in L 0.40 µm devices, the photoemission mechanisms may be different between L = 0.35 µm and L 0.40 µm devices. The photoemission points due to p-n junction breakdown were located at the cylindrical curvature edge of the n⁺-drain region. Two-dimensional device simulation, even when the lateral electric field, electron temperature and radiative recombination rate were taken into account, could not explain the experimental results completely.

Publication: IEICE TRANSACTIONS on Electronics Vol.E82-C No.4 pp.593-601

Publication Date: 1999/04/25

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Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures)

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Toshihiro MATSUDA, Naoko MATSUYAMA, Kiyomi HOSOI, Etsumasa KAMEDA, Takashi OHZONE, "A Study on Hot-Carrier-Induced Photoemission in n-MOSFETs" in IEICE TRANSACTIONS on Electronics, vol. E82-C, no. 4, pp. 593-601, April 1999, doi: .
Abstract: Profiles of photoemission induced by hot electrons in LDD-type n-MOSFETs with L = 0.35-2.0 µm were measured with a photoemission microscope, which had a capability of 1000 magnification and a spatial resolution of 27 nm/pixel on a CCD imager sufficient to detect profile changes in the channel length direction. Under the bias condition of maximum substrate current, photoemission peaks were located at the LDD-drain edge and the n⁺-drain edge for the devices with L = 0.35 and L 0.40 µm, respectively. A peak position, only in the case of the 0.35 µm device, shifted toward the drain side by about 80 nm at V_D = 7.0 V. Since V_D did not affect peak positions in L 0.40 µm devices, the photoemission mechanisms may be different between L = 0.35 µm and L 0.40 µm devices. The photoemission points due to p-n junction breakdown were located at the cylindrical curvature edge of the n⁺-drain region. Two-dimensional device simulation, even when the lateral electric field, electron temperature and radiative recombination rate were taken into account, could not explain the experimental results completely.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_4_593/_p

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@ARTICLE{e82-c_4_593,
author={Toshihiro MATSUDA, Naoko MATSUYAMA, Kiyomi HOSOI, Etsumasa KAMEDA, Takashi OHZONE, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Study on Hot-Carrier-Induced Photoemission in n-MOSFETs},
year={1999},
volume={E82-C},
number={4},
pages={593-601},
abstract={Profiles of photoemission induced by hot electrons in LDD-type n-MOSFETs with L = 0.35-2.0 µm were measured with a photoemission microscope, which had a capability of 1000 magnification and a spatial resolution of 27 nm/pixel on a CCD imager sufficient to detect profile changes in the channel length direction. Under the bias condition of maximum substrate current, photoemission peaks were located at the LDD-drain edge and the n⁺-drain edge for the devices with L = 0.35 and L 0.40 µm, respectively. A peak position, only in the case of the 0.35 µm device, shifted toward the drain side by about 80 nm at V_D = 7.0 V. Since V_D did not affect peak positions in L 0.40 µm devices, the photoemission mechanisms may be different between L = 0.35 µm and L 0.40 µm devices. The photoemission points due to p-n junction breakdown were located at the cylindrical curvature edge of the n⁺-drain region. Two-dimensional device simulation, even when the lateral electric field, electron temperature and radiative recombination rate were taken into account, could not explain the experimental results completely.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - A Study on Hot-Carrier-Induced Photoemission in n-MOSFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 593
EP - 601
AU - Toshihiro MATSUDA
AU - Naoko MATSUYAMA
AU - Kiyomi HOSOI
AU - Etsumasa KAMEDA
AU - Takashi OHZONE
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1999
AB - Profiles of photoemission induced by hot electrons in LDD-type n-MOSFETs with L = 0.35-2.0 µm were measured with a photoemission microscope, which had a capability of 1000 magnification and a spatial resolution of 27 nm/pixel on a CCD imager sufficient to detect profile changes in the channel length direction. Under the bias condition of maximum substrate current, photoemission peaks were located at the LDD-drain edge and the n⁺-drain edge for the devices with L = 0.35 and L 0.40 µm, respectively. A peak position, only in the case of the 0.35 µm device, shifted toward the drain side by about 80 nm at V_D = 7.0 V. Since V_D did not affect peak positions in L 0.40 µm devices, the photoemission mechanisms may be different between L = 0.35 µm and L 0.40 µm devices. The photoemission points due to p-n junction breakdown were located at the cylindrical curvature edge of the n⁺-drain region. Two-dimensional device simulation, even when the lateral electric field, electron temperature and radiative recombination rate were taken into account, could not explain the experimental results completely.
ER -