Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias

Toshiro HIRAMOTO; Makoto TAKAMIYA

Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias

Toshiro HIRAMOTO, Makoto TAKAMIYA

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We have studied the characteristic trade-offs in low power and low voltage MOSFETs from the viewpoint of back-gate control and body effect factor. Previously reported MOSFET structures are classified into four categories in terms of back-gate structures. It is shown that a MOSFET with a fixed back-bias has only a limited current drive at low voltage irrespective of device structures, while current drive of a dynamic threshold MOSFET with body tied to gate is more enhanced with increasing body effect factor. We have proposed a new dynamic threshold MOSFET, electrically induced body (EIB) DTMOS, which has a very large body effect factor at low threshold voltage and high current drive at low supply voltage.

Publication: IEICE TRANSACTIONS on Electronics Vol.E83-C No.2 pp.161-169

Publication Date: 2000/02/25

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Type of Manuscript: Special Section INVITED PAPER (Special Issue on Low-Power High-Speed CMOS LSI Technologies)

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Toshiro HIRAMOTO, Makoto TAKAMIYA, "Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias" in IEICE TRANSACTIONS on Electronics, vol. E83-C, no. 2, pp. 161-169, February 2000, doi: .
Abstract: We have studied the characteristic trade-offs in low power and low voltage MOSFETs from the viewpoint of back-gate control and body effect factor. Previously reported MOSFET structures are classified into four categories in terms of back-gate structures. It is shown that a MOSFET with a fixed back-bias has only a limited current drive at low voltage irrespective of device structures, while current drive of a dynamic threshold MOSFET with body tied to gate is more enhanced with increasing body effect factor. We have proposed a new dynamic threshold MOSFET, electrically induced body (EIB) DTMOS, which has a very large body effect factor at low threshold voltage and high current drive at low supply voltage.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_2_161/_p

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@ARTICLE{e83-c_2_161,
author={Toshiro HIRAMOTO, Makoto TAKAMIYA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias},
year={2000},
volume={E83-C},
number={2},
pages={161-169},
abstract={We have studied the characteristic trade-offs in low power and low voltage MOSFETs from the viewpoint of back-gate control and body effect factor. Previously reported MOSFET structures are classified into four categories in terms of back-gate structures. It is shown that a MOSFET with a fixed back-bias has only a limited current drive at low voltage irrespective of device structures, while current drive of a dynamic threshold MOSFET with body tied to gate is more enhanced with increasing body effect factor. We have proposed a new dynamic threshold MOSFET, electrically induced body (EIB) DTMOS, which has a very large body effect factor at low threshold voltage and high current drive at low supply voltage.},
keywords={},
doi={},
ISSN={},
month={February},}

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TY - JOUR
TI - Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias
T2 - IEICE TRANSACTIONS on Electronics
SP - 161
EP - 169
AU - Toshiro HIRAMOTO
AU - Makoto TAKAMIYA
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2000
AB - We have studied the characteristic trade-offs in low power and low voltage MOSFETs from the viewpoint of back-gate control and body effect factor. Previously reported MOSFET structures are classified into four categories in terms of back-gate structures. It is shown that a MOSFET with a fixed back-bias has only a limited current drive at low voltage irrespective of device structures, while current drive of a dynamic threshold MOSFET with body tied to gate is more enhanced with increasing body effect factor. We have proposed a new dynamic threshold MOSFET, electrically induced body (EIB) DTMOS, which has a very large body effect factor at low threshold voltage and high current drive at low supply voltage.
ER -