A New Test Structure for Precise Location Measurement of Hot-Carrier-Induced Photoemission Peak in Subquarter-Micron MOSFETs

Toshihiro MATSUDA; Mari FUNADA; Takashi OHZONE; Etsumasa KAMEDA; Shinji ODANAKA; Kyoji TAMASHITA; Norio KOIKE; Ken-ichiro TATSUUMA

A New Test Structure for Precise Location Measurement of Hot-Carrier-Induced Photoemission Peak in Subquarter-Micron MOSFETs

Toshihiro MATSUDA, Mari FUNADA, Takashi OHZONE, Etsumasa KAMEDA, Shinji ODANAKA, Kyoji TAMASHITA, Norio KOIKE, Ken-ichiro TATSUUMA

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A new test structure, which has a 0.5 µm line and space polysilicon pattern of which center is aligned on the MOSFET's gate center, is proposed for hot-carrier-induced photoemission analysis in subquarter micron devices. The photoemission-intensity profiles were measured using the photoemission microscope with a liquid N₂ cooled CCD imager. We successfully measured a peak position of photoemission intensity from the center of MOSFET's gate with a spatial resolution sufficiently less than 24 nm at the microscope magnification of 1000. The test structure is useful to study the photoemission effects in semiconductor devices.

Publication: IEICE TRANSACTIONS on Electronics Vol.E85-C No.5 pp.1125-1133

Publication Date: 2002/05/01

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Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures)

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Toshihiro MATSUDA, Mari FUNADA, Takashi OHZONE, Etsumasa KAMEDA, Shinji ODANAKA, Kyoji TAMASHITA, Norio KOIKE, Ken-ichiro TATSUUMA, "A New Test Structure for Precise Location Measurement of Hot-Carrier-Induced Photoemission Peak in Subquarter-Micron MOSFETs" in IEICE TRANSACTIONS on Electronics, vol. E85-C, no. 5, pp. 1125-1133, May 2002, doi: .
Abstract: A new test structure, which has a 0.5 µm line and space polysilicon pattern of which center is aligned on the MOSFET's gate center, is proposed for hot-carrier-induced photoemission analysis in subquarter micron devices. The photoemission-intensity profiles were measured using the photoemission microscope with a liquid N₂ cooled CCD imager. We successfully measured a peak position of photoemission intensity from the center of MOSFET's gate with a spatial resolution sufficiently less than 24 nm at the microscope magnification of 1000. The test structure is useful to study the photoemission effects in semiconductor devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_5_1125/_p

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@ARTICLE{e85-c_5_1125,
author={Toshihiro MATSUDA, Mari FUNADA, Takashi OHZONE, Etsumasa KAMEDA, Shinji ODANAKA, Kyoji TAMASHITA, Norio KOIKE, Ken-ichiro TATSUUMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A New Test Structure for Precise Location Measurement of Hot-Carrier-Induced Photoemission Peak in Subquarter-Micron MOSFETs},
year={2002},
volume={E85-C},
number={5},
pages={1125-1133},
abstract={A new test structure, which has a 0.5 µm line and space polysilicon pattern of which center is aligned on the MOSFET's gate center, is proposed for hot-carrier-induced photoemission analysis in subquarter micron devices. The photoemission-intensity profiles were measured using the photoemission microscope with a liquid N₂ cooled CCD imager. We successfully measured a peak position of photoemission intensity from the center of MOSFET's gate with a spatial resolution sufficiently less than 24 nm at the microscope magnification of 1000. The test structure is useful to study the photoemission effects in semiconductor devices.},
keywords={},
doi={},
ISSN={},
month={May},}

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TY - JOUR
TI - A New Test Structure for Precise Location Measurement of Hot-Carrier-Induced Photoemission Peak in Subquarter-Micron MOSFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1125
EP - 1133
AU - Toshihiro MATSUDA
AU - Mari FUNADA
AU - Takashi OHZONE
AU - Etsumasa KAMEDA
AU - Shinji ODANAKA
AU - Kyoji TAMASHITA
AU - Norio KOIKE
AU - Ken-ichiro TATSUUMA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2002
AB - A new test structure, which has a 0.5 µm line and space polysilicon pattern of which center is aligned on the MOSFET's gate center, is proposed for hot-carrier-induced photoemission analysis in subquarter micron devices. The photoemission-intensity profiles were measured using the photoemission microscope with a liquid N₂ cooled CCD imager. We successfully measured a peak position of photoemission intensity from the center of MOSFET's gate with a spatial resolution sufficiently less than 24 nm at the microscope magnification of 1000. The test structure is useful to study the photoemission effects in semiconductor devices.
ER -