Multiple-Valued T-Gate Based on Multiple Junction Surface Tunnel Transistor
Summary :
A novel multiple-valued transfer gate (T-gate) consisting of multiple-junction surface tunnel transistors (MJSTTs) and hetero-junction FETs (HJFETs) was developed and its operation was confirmed by both simulation and experiment. The number of the devices required to form the T-gate can be drastically reduced because of the high functionality of the MJSTT; namely only three MJSTTs and three HJFETs are required to fabricate the three-valued T-gate. This number of transistors is less than half that of a conventional circuit. The fabricated circuit exhibited a basic T-gate operation with various logic functions. Furthermore, only one T-gate is needed to form a multiple-valued D-flip-flop (D-FF) circuit.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E85-C No.7 pp.1486-1490
- Publication Date
- 2002/07/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
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Tetsuya UEMURA, Toshio BABA, "Multiple-Valued T-Gate Based on Multiple Junction Surface Tunnel Transistor" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 7, pp. 1486-1490, July 2002, doi: .
Abstract: A novel multiple-valued transfer gate (T-gate) consisting of multiple-junction surface tunnel transistors (MJSTTs) and hetero-junction FETs (HJFETs) was developed and its operation was confirmed by both simulation and experiment. The number of the devices required to form the T-gate can be drastically reduced because of the high functionality of the MJSTT; namely only three MJSTTs and three HJFETs are required to fabricate the three-valued T-gate. This number of transistors is less than half that of a conventional circuit. The fabricated circuit exhibited a basic T-gate operation with various logic functions. Furthermore, only one T-gate is needed to form a multiple-valued D-flip-flop (D-FF) circuit.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_7_1486/_p
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@ARTICLE{e85-c_7_1486,
author={Tetsuya UEMURA, Toshio BABA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Multiple-Valued T-Gate Based on Multiple Junction Surface Tunnel Transistor},
year={2002},
volume={E85-C},
number={7},
pages={1486-1490},
abstract={A novel multiple-valued transfer gate (T-gate) consisting of multiple-junction surface tunnel transistors (MJSTTs) and hetero-junction FETs (HJFETs) was developed and its operation was confirmed by both simulation and experiment. The number of the devices required to form the T-gate can be drastically reduced because of the high functionality of the MJSTT; namely only three MJSTTs and three HJFETs are required to fabricate the three-valued T-gate. This number of transistors is less than half that of a conventional circuit. The fabricated circuit exhibited a basic T-gate operation with various logic functions. Furthermore, only one T-gate is needed to form a multiple-valued D-flip-flop (D-FF) circuit.},
keywords={},
doi={},
ISSN={},
month={July},}
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TY - JOUR
TI - Multiple-Valued T-Gate Based on Multiple Junction Surface Tunnel Transistor
T2 - IEICE TRANSACTIONS on Electronics
SP - 1486
EP - 1490
AU - Tetsuya UEMURA
AU - Toshio BABA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2002
AB - A novel multiple-valued transfer gate (T-gate) consisting of multiple-junction surface tunnel transistors (MJSTTs) and hetero-junction FETs (HJFETs) was developed and its operation was confirmed by both simulation and experiment. The number of the devices required to form the T-gate can be drastically reduced because of the high functionality of the MJSTT; namely only three MJSTTs and three HJFETs are required to fabricate the three-valued T-gate. This number of transistors is less than half that of a conventional circuit. The fabricated circuit exhibited a basic T-gate operation with various logic functions. Furthermore, only one T-gate is needed to form a multiple-valued D-flip-flop (D-FF) circuit.
ER -
English
